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Infineon Technologies IPA60R360CFD7XKSA1

Part No.:
IPA60R360CFD7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R360CFD7XKSA1.pdf
Description:
MOSFET N-CH 650V 5A TO220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:470

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Product details

Overview

IPA60R360CFD7XKSA1 from Infineon Technologies is a 600 V, 360 mΩ ultra-fast body diode superjunction MOSFET in PG-TO220 FP package, optimized for soft-switching resonant topologies including phase-shift full-bridge (ZVS) and LLC converters. It delivers 14 nC typical gate charge, 0.28–0.56 µC reverse recovery charge (Qrr), and 1300 A/µs diF/dt ruggedness, enabling high-efficiency, high-power-density server and EV charging power supplies.

For engineers reviewing the IPA60R360CFD7XKSA1 datasheet, IPA60R360CFD7XKSA1 pinout, IPA60R360CFD7XKSA1 application, or IPA60R360CFD7XKSA1 equivalent, key selection criteria include RDS(on)×Qg FOM (lowest in class), hard commutation robustness, soft-switching dv/dt immunity, and JEDEC-qualified industrial reliability at 150 °C junction temperature.

Technical Context

This CoolMOS™ CFD7 device implements a superjunction structure with integrated fast-recovery body diode, enabling ZVS operation without external diodes. Its low Qrr (0.28–0.56 µC) and high diF/dt rating (1300 A/µs) directly support reliable hard commutation in asymmetric half-bridge and LLC primary-side switching.

The MOSFET features a 5.54 °C/W junction-to-case thermal resistance and operates up to 150 °C junction temperature, with gate plateau voltage of 5.8 V and turn-off delay time of 41.5 ns under 400 V, 4 A conditions - parameters critical for timing-critical resonant control loops.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - rated blocking voltage for 400 V bus applications with 50 % margin
RDS(on),max360 mΩ at Tj = 150 °C - defines conduction loss in high-temp, high-load conditions
Qg,typ14 nC - enables low-drive-power gate driving and reduced EMI in high-frequency ZVS
Qrr0.28–0.56 µC - minimizes switching loss and voltage overshoot during diode commutation
diF/dt1300 A/µs - ensures robustness against rapid current reversal in hard-switched transitions
Eoss@400V1.6 µJ - reduces capacitive turn-on loss in resonant topologies with high VDS swing
Tj,max150 °C - supports continuous operation in thermally constrained server/charger enclosures

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, drain-connected tab (Pin 2).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives PWM signal; requires <10.2 Ω gate resistor for stable 41.5 ns turn-off delay
Pin 2 (Drain)High-voltage power outputInternally connected to metal tab; electrically isolated but thermally coupled to heatsink
Pin 3 (Source)Power return / reference nodeServes as local ground reference for gate driver; carries full load current and diode reverse recovery current

Key Features

FeatureDesign Value
Ultra-fast body diodetrr = 81–122 ns and Qrr = 0.28–0.56 µC enable zero-voltage turn-on without external SiC diode
Low RDS(on) × Qg FOMIndustry-leading figure-of-merit reduces combined conduction + switching losses in 100–500 kHz LLC designs
Hard commutation ruggedness1300 A/µs diF/dt rating validated per JEDEC JESD47 ensures reliability in asymmetric half-bridge hard-switching events
Thermal performance5.54 °C/W RthJC allows >23 W dissipation at TC = 25 °C, supporting compact heatsink integration

Applications

Server PSUTelecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW phase-shift full-bridge DC/DC converter for AI server racks.

IC Role / Device Role / Timing Role: High-side ZVS switch with synchronized gate drive; handles 400 V bus, 24 A pulsed drain current.

Use Value: 0.56 µC Qrr and 1300 A/µs diF/dt prevent shoot-through and voltage spikes during hard commutation at 200 kHz.

Use Scenario: LLC resonant converter primary switch in -48 V telecom rectifier delivering 2.5 kW.

IC Role / Device Role / Timing Role: Resonant-mode power switch operating near zero-voltage crossing; gate driven at 300–400 kHz.

Use Value: 1.6 µJ Eoss and 14 nC Qg reduce turn-on loss and driver power, improving efficiency above 96.5 %.

EV Onboard ChargerIndustrial AC/DC Module

Use Scenario: PFC + DC/DC stage switch in 11 kW bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Interleaved totem-pole PFC switch and LLC primary switch; operates at 150 °C case temperature.

Use Value: JEDEC-qualified 150 °C Tj rating and 360 mΩ RDS(on) ensure stable conduction loss across full automotive ambient range.

Use Scenario: High-efficiency 1.5 kW industrial AC/DC front-end with active clamp flyback and LLC stages.

IC Role / Device Role / Timing Role: Main power switch in dual-stage topology; subjected to repetitive avalanche stress during fault conditions.

Use Value: 29 mJ single-pulse EAS and 120 V/ns dv/dt ruggedness provide margin against line transients and startup surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPW60R099C7Lower RDS(on) (99 mΩ), higher Qg (32 nC), same 600 V rating and CFD7 platformBetter conduction loss but higher gate drive loss; requires larger gate driver and heatsink areaSelect when system prioritizes conduction efficiency over switching frequency and board space
STP60N6F7650 V, 60 mΩ, 62 nC Qg; based on MDmesh™ DM6, not CFD7; no specified diF/dt ratingLacks documented diF/dt ruggedness and Qrr optimization for soft switching; lower thermal resistance (4.5 °C/W)Prefer only in hard-switched topologies where diode recovery is externally managed

Compared with IPW60R099C7 and STP60N6F7, IPA60R360CFD7XKSA1 offers the optimal balance of low Qrr, high diF/dt, and moderate RDS(on) for resonant converters-enabling simpler gate drive design, reduced snubber requirements, and proven reliability in ZVS LLC and PSFB deployments.

Availability

IPA60R360CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IPA60R360CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for soft-switching resonant topologies-including phase-shift full-bridge and LLC converters-where ultra-low Qrr, fast body diode recovery, and hard commutation robustness are mandatory.

FAQ

What is the maximum continuous drain current for IPA60R360CFD7XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 3 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.1 datasheet. This limit is thermally derived from the 5.54 °C/W RthJC and 150 °C Tj,max, ensuring safe operation without exceeding junction temperature under sustained load.

Does IPA60R360CFD7XKSA1 require a gate resistor for stability, and what value is recommended?

Yes - a 10.2 Ω gate resistor is used in the datasheet's dynamic characterization (Table 5, td(off) = 41.5 ns). This value balances switching speed, gate oscillation damping, and EMI control; lower values risk ringing and overshoot, especially with PCB trace inductance >5 nH.

Can IPA60R360CFD7XKSA1 be paralleled with identical units, and what layout guidance applies?

Yes, but Infineon recommends ferrite beads on each gate line or separate totem-pole drivers to suppress gate loop oscillation and ensure current sharing. Layout must maintain symmetrical source inductance (<1 nH difference) and identical thermal coupling to avoid thermal runaway during high diF/dt events.

Is the body diode in IPA60R360CFD7XKSA1 suitable for synchronous rectification in LLC secondary side?

No - the body diode is optimized for primary-side hard commutation and ZVS turn-on, not low-loss synchronous rectification. Its VSD = 1.0 V at 2.9 A (Tj = 25 °C) and lack of reverse recovery tail make it unsuitable for secondary-side SR; discrete Schottky or GaN FETs are required there.

IPA60R360CFD7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CFD7
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id:
4.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
679 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
23W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220 Full Pack

IPA60R360CFD7XKSA1 FAQ

1.How can I place an order for IPA60R360CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R360CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R360CFD7XKSA1 reliable?

The price and inventory of IPA60R360CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R360CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R360CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R360CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R360CFD7XKSA1?

IPA60R360CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R360CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R360CFD7XKSA1?

For technical support, including IPA60R360CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R360CFD7XKSA1 requirements.

6.How does Aetrix verify that IPA60R360CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R360CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R360CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R360CFD7XKSA1?

All IPA60R360CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R360CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R360CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R360CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R360CFD7XKSA1 Tags

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