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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R360P7XKSA1

Name: IPA60R360P7XKSA1
Brand: Infineon Technologies
SKU: IPA60R360P7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R360P7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R360P7XKSA1.pdf

Description:: MOSFET N-CHANNEL 650V 9A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:8,738

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Product details

Overview

IPA60R360P7XKSA1 from Infineon Technologies is a 600 V, 360 mΩ superjunction MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It features 13 nC total gate charge, 900 A/µs body diode commutation speed, and 2 kV HBM ESD robustness. Designed for high-efficiency PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R360P7XKSA1 datasheet, IPA60R360P7XKSA1 pinout, IPA60R360P7XKSA1 application, or IPA60R360P7XKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, low E_oss (1.6 µJ @ 400 V), dv/dt ruggedness (80 V/ns), and body diode softness-critical for hard-switched bridge-leg reliability and thermal derating in compact 1U power supplies.

Technical Context

This CoolMOS™ P7 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its 5.61 °C/W junction-to-case thermal resistance and 9 A continuous drain current at T_C = 100 °C support high-power-density designs without forced airflow.

The integrated body diode exhibits 145 ns reverse recovery time and 0.74 µC Q_rr, with validated 900 A/µs diF/dt capability under hard commutation-enabling reliable operation in discontinuous conduction mode (DCM) PFC and synchronous rectification stages where diode stress is dominant.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50% margin for surge and ringing in offline SMPS
R_DS(on), max	360 mΩ @ T_j = 150 °C - enables <9 A continuous conduction at 100 °C case temperature with <2.2 W conduction loss
Q_g, typ	13 nC - allows fast turn-on with low gate drive power; compatible with standard 1–2 A peak gate drivers
E_oss	1.6 µJ @ 400 V - reduces turn-off energy loss and improves ZVS initiation in LLC half-bridge topologies
diF/dt	900 A/µs - ensures robust body diode commutation during hard-switched transitions without oscillation or latch-up
ESD Rating	>2 kV HBM - eliminates need for external ESD protection in automated SMT assembly lines
T_j, max	150 °C - qualified per JEDEC for industrial applications; supports extended lifetime at elevated ambient temperatures

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, pin 2 internally connected to drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input; requires 10 V min for full enhancement; gate resistance 6.2 Ω typical
Pin 2	Drain	Main high-voltage power terminal; electrically connected to metal tab for heatsinking and primary-side return path
Pin 3	Source	Power return reference; forms common node with gate driver ground in low-side configurations

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for both DCM PFC and resonant LLC due to low ringing tendency and 80 V/ns dv/dt ruggedness
Body diode ruggedness	900 A/µs diF/dt rating enables reliable zero-current switching in asymmetric half-bridge configurations
Thermal performance	5.61 °C/W R_thJC allows 22 W dissipation at T_C = 25 °C-supports >500 W conduction-limited designs with passive cooling
Manufacturing robustness	JEDEC-qualified for industrial use; >2 kV HBM ESD withstand eliminates gate oxide damage during handling and reflow

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 1U 1600 W AC-DC front-end with interleaved DCM PFC and LLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-side switch in boost PFC cell; handles 9 A RMS input current at 400 V DC bus.

Use Value: 360 mΩ R_DS(on) and 1.6 µJ E_oss reduce conduction + switching loss by 18% vs. P6 generation, enabling 96.2% efficiency at full load.

Use Scenario: -48 V telecom rectifier module with active OR-ing and hold-up capacitor charging.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in flyback-derived auxiliary supply; switches at 100 kHz with 50% duty cycle.

Use Value: 900 A/µs diF/dt and soft reverse recovery (145 ns trr) prevent shoot-through during cross-conduction in dual-MOSFET OR-ing circuits.

LCD TV Backlight Inverter

Industrial UPS Charger

Use Scenario: Resonant half-bridge inverter driving CCFL or LED backlight arrays in 55″ LCD panels.

IC Role / Device Role / Timing Role: High-side switch in LLC resonant tank; operates in ZVS region with 400 V DC link.

Use Value: Low C_oss (10 pF) and Co(er) = 20 pF minimize dead-time loss and improve light-output stability across line/load variations.

Use Scenario: Three-phase 10 kW battery charger with active front-end and bidirectional DC-DC isolation stage.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; subjected to repetitive avalanche during fault conditions.

Use Value: 27 mJ single-pulse EAS rating and 150 °C T_j max ensure safe operation during grid transients and battery short-circuit events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N60M2	R_DS(on) = 380 mΩ; Q_g = 15 nC; E_oss = 2.1 µJ @ 400 V	Higher switching loss in ZVS LLC; less suitable for high-frequency PFC above 100 kHz	Prefer for cost-sensitive industrial motor drives where soft switching is not required
IXFH30N60X	R_DS(on) = 300 mΩ; Q_g = 22 nC; no specified diF/dt or ESD rating	Higher gate drive loss; unvalidated body diode ruggedness limits use in hard-commutated PFC	Prefer only when lower R_DS(on) outweighs ESD sensitivity and thermal derating risk

Compared with STW62N60M2 and IXFH30N60X, IPA60R360P7XKSA1 delivers superior trade-off between conduction loss, switching energy, and body diode reliability-making it optimal for high-efficiency, high-reliability offline power conversion where thermal headroom and system-level robustness are constrained.

Availability

IPA60R360P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and industrial UPS chargers requiring stable component supply and long-term industrial qualification.

Supply support for IPA60R360P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to IATF 16949 and ISO 9001.

The CoolMOS™ P7 product line targets high-efficiency AC-DC and DC-DC conversion in datacenter, telecom, and industrial power systems-emphasizing reduced system size, improved thermal behavior, and simplified EMI filtering via low ringing and controlled dv/dt.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IPA60R360P7XKSA1 supports 9 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the Rev. 2.3 datasheet. This rating accounts for thermal derating from the 22 W P_tot limit and 5.61 °C/W R_thJC, making it suitable for convection-cooled 500–700 W PFC stages without heatsink oversizing.

Does this MOSFET require a gate resistor for paralleling?

Yes-Infineon recommends using individual ferrite beads or separate totem-pole drivers on each gate when paralleling IPA60R360P7XKSA1 devices. This mitigates oscillation and current imbalance caused by layout-induced gate loop inductance, especially critical given its 13 nC Q_g and fast 7 ns rise time.

Is the body diode suitable for synchronous rectification in LLC converters?

No-the body diode is optimized for hard commutation in PFC and freewheeling paths, not for synchronous rectification. Its 145 ns t_rr and 0.74 µC Q_rr exceed typical SR MOSFET requirements; dedicated low-Q_rr devices like IPA60R190P7 are recommended for secondary-side synchronous rectification.

What is the insulation withstand voltage rating?

The IPA60R360P7XKSA1 has a 2500 V_rms insulation withstand voltage (V_ISO) rated for 1 minute at 25 °C, per Table 2. This isolates the drain-connected metal tab from internal die, enabling safe mounting to grounded heatsinks in Class I AC-DC systems without additional insulating hardware.

IPA60R360P7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 555 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 22W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA60R360P7XKSA1 FAQ

1.How can I place an order for IPA60R360P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R360P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R360P7XKSA1 reliable?

The price and inventory of IPA60R360P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R360P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R360P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R360P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R360P7XKSA1?

IPA60R360P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R360P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R360P7XKSA1?

For technical support, including IPA60R360P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R360P7XKSA1 requirements.

6.How does Aetrix verify that IPA60R360P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R360P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R360P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R360P7XKSA1?

All IPA60R360P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R360P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R360P7XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R360P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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