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Infineon Technologies IPA60R450E6XKSA1

Part No.:
IPA60R450E6XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R450E6XKSA1.pdf
Description:
MOSFET N-CH 600V 9.2A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,277

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Product details

Overview

IPA60R450E6XKSA1 from Infineon Technologies is a 600 V, 13.5 A (TC = 100 °C) CoolMOS™ E6 superjunction MOSFET optimized for hard-switched and resonant SMPS topologies. It features RDS(on) = 450 mΩ (max), ultra-low gate charge Qg = 28 nC, and low Eoss = 190 nJ - enabling high-efficiency 1–3 kW server PSUs, telecom rectifiers, and industrial AC-DC converters.

For engineers reviewing the IPA60R450E6XKSA1 datasheet, IPA60R450E6XKSA1 pinout, IPA60R450E6XKSA1 application, or IPA60R450E6XKSA1 equivalent, key selection criteria include its 600 V VDSS, 450 mΩ RDS(on), 28 nC Qg, 190 nJ Eoss, and TO-220FP package thermal performance under continuous conduction mode.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture using charge compensation technology to achieve simultaneous reduction in RDS(on) × A and switching losses. Its optimized cell pitch and reduced gate-drain charge Qgd enable fast, soft turn-off with minimal voltage overshoot in LLC and PFC stages.

The MOSFET supports both unipolar (hard-switched) and bipolar (resonant) operation modes. Its low Ciss/Coss ratio (750 pF / 45 pF at VDS = 400 V) ensures stable zero-voltage switching behavior and predictable dead-time requirements in half-bridge configurations.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 600 V - Withstands DC bus voltages up to 400 V RMS + 30% surge in 3-phase rectified systems without derating.
RDS(on) max 450 mΩ at Tj = 25 °C - Enables <1.5 W conduction loss at 10 A drain current in 100 °C ambient designs.
Qg 28 nC - Reduces gate drive power by >40% vs. E3 generation, allowing smaller isolated gate drivers in high-density PSUs.
Eoss 190 nJ at VDS = 400 V - Low output capacitance energy minimizes turn-on loss in ZVS circuits and improves light-load efficiency.
ID cont 13.5 A at TC = 100 °C - Supports continuous 1.2 kW output in TO-220FP with standard heatsink (θJA ≈ 45 K/W).
tr/tf 11 ns / 22 ns - Fast switching enables >300 kHz operation in PFC boost stages while maintaining EMI compliance.

Pinout & Package

IPA60R450E6XKSA1 is housed in a TO-220FP (Full-Pak) package with insulated tab, enabling direct mounting to heatsinks without isolation hardware. The package features 3.5 mm creepage/clearance and meets UL 94 V-0 flammability rating.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main high-side power terminal Internally connected to metal tab; requires thermal interface but no electrical isolation when mounted to grounded heatsink.
Gate (G) Control input Low-threshold (VGS(th) = 3.5 V typ) and low-input capacitance (Ciss = 750 pF) simplify gate driver design and reduce Miller-induced shoot-through risk.
Source (S) Power return reference Provides low-inductance source path for high di/dt switching; must be routed with minimal loop area to suppress ringing.

Key Features

Feature Design Value
Ultra-low RDS(on) × Qg figure of merit 12.6 Ω·nC - Enables >96% efficiency in 2 kW server PSUs operating at 230 VAC input and full load.
Reduced Eoss and Qoss 190 nJ / 12 nC at 400 V - Lowers turn-on loss and improves ZVS margin in LLC resonant converters.
Hard-soldering capable Rated for wave soldering at 260 °C for 10 s - Eliminates need for lead-free reflow profile validation in high-volume manufacturing.
Qualified per JEDEC JESD47 1000 h HTRB at 150 °C - Ensures long-term reliability in high-temperature server and telecom environments.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 2 kW 80 PLUS Titanium AC-DC front-end with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching element in boost PFC and LLC half-bridge, operating at 100–300 kHz with ZVS.

Use Value: 450 mΩ RDS(on) and 28 nC Qg reduce total losses by 1.8 W vs. E3 generation, directly improving system efficiency from 95.8% to 96.3% at full load.

Use Scenario: Output rectification and isolation switching in -48 V telecom DC-DC modules with synchronous rectification.

IC Role / Device Role / Timing Role: High-side switch in forward converter primary, handling 300 V bus with 50% duty cycle and 200 kHz switching.

Use Value: Low Coss (45 pF) and fast tf (22 ns) minimize switching loss and voltage stress during turn-off, reducing snubber size by 30%.

Industrial Motor Drive LED Streetlight Driver

Use Scenario: Inverter leg switch in 3 kW variable-frequency drive for HVAC compressors with IGBT replacement.

IC Role / Device Role / Timing Role: Hard-switched 600 V bridge arm switch operating at 8–16 kHz with 100 °C case temperature.

Use Value: TO-220FP package delivers 13.5 A continuous current at TC = 100 °C - eliminates need for parallel devices in 3 kW designs, simplifying layout and gate drive.

Use Scenario: Primary-side switch in 150 W constant-current LED driver for outdoor street lighting with universal AC input.

IC Role / Device Role / Timing Role: Flyback controller switch operating in DCM at 65 kHz, handling 400 V peak drain voltage during line surges.

Use Value: 600 V VDSS and 190 nJ Eoss ensure robust surge immunity and >92% efficiency across 90–305 VAC input range without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP60N60DM6 RDS(on) = 480 mΩ, Qg = 32 nC, Eoss = 220 nJ - higher conduction and switching losses. Optimized for cost-sensitive industrial motor drives; less suitable for high-frequency telecom PSUs. Prefer IPA60R450E6XKSA1 where efficiency >96% or fsw >200 kHz is required.
IXTH60N60L2 RDS(on) = 420 mΩ, Qg = 45 nC, Eoss = 280 nJ - lower RDS(on) but significantly higher Qg and Eoss. Better for low-frequency (<100 kHz), high-current applications; suffers >15% higher gate drive loss at 300 kHz. Choose IPA60R450E6XKSA1 for resonant topologies requiring low Qg/Eoss trade-off.

Compared with STP60N60DM6 and IXTH60N60L2, IPA60R450E6XKSA1 delivers the lowest RDS(on) × Qg product (12.6 Ω·nC), making it optimal for high-frequency, high-efficiency SMPS where gate drive loss and ZVS margin are critical constraints.

Availability

IPA60R450E6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial motor drives requiring stable component supply and long-lifecycle support.

Supply support for IPA60R450E6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ E6 series targets high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing low RDS(on) × Qg, robust avalanche capability, and qualification for mission-critical applications.

FAQ

What is the maximum continuous drain current for IPA60R450E6XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 13.5 A at TC = 100 °C, verified per Infineon's datasheet Rev. 2.2 (2014). This rating assumes TO-220FP package mounted on a 10 cm² copper heatsink with 1 mm thermal interface material and natural convection cooling.

Does IPA60R450E6XKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage VGS(th) of 3.5 V (typical) and is fully enhanced at 10 V. A gate drive voltage of 0 V to 15 V is sufficient; negative bias is not required for noise immunity or safe operation in standard SMPS layouts.

Can IPA60R450E6XKSA1 replace older CoolMOS™ E3 or E4 devices in existing designs?

Yes - it is a direct drop-in replacement for IPA60R600E3 and IPA60R600E4 in most cases. Its lower RDS(on) (450 mΩ vs. 600 mΩ) and reduced Qg improve efficiency, but gate drive timing may require minor adjustment due to faster switching edges.

What is the avalanche energy rating for single-pulse conditions?

The rated single-pulse avalanche energy EAS is 190 mJ at Tj = 25 °C, measured with ID = 13.5 A and VDD = 400 V. This value is specified in the "Avalanche Characteristics" section of the datasheet and validated per JEDEC JESD24-11 test conditions.

IPA60R450E6XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
450mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:
28 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
620 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPA60R450E6XKSA1 FAQ

1.How can I place an order for IPA60R450E6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R450E6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R450E6XKSA1 reliable?

The price and inventory of IPA60R450E6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R450E6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R450E6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R450E6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R450E6XKSA1?

IPA60R450E6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R450E6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R450E6XKSA1?

For technical support, including IPA60R450E6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R450E6XKSA1 requirements.

6.How does Aetrix verify that IPA60R450E6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R450E6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R450E6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R450E6XKSA1?

All IPA60R450E6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R450E6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R450E6XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R450E6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R450E6XKSA1 Tags

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