Infineon Technologies IPA60R460CEXKSA1

Overview

IPA60R460CEXKSA1 from Infineon Technologies is a 600 V, 460 mΩ superjunction MOSFET in TO-220FP (FullPAK) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 13.1 A continuous drain current at 25°C, 28 nC total gate charge, and 2.5 µJ output energy at 400 V, targeting cost-sensitive lighting and adapter applications.

For engineers reviewing the IPA60R460CEXKSA1 datasheet, IPA60R460CEXKSA1 pinout, IPA60R460CEXKSA1 application, or IPA60R460CEXKSA1 equivalent, key selection criteria include R_DS(on) vs. switching loss trade-off, commutation ruggedness in discontinuous conduction mode (DCM) PFC, gate drive compatibility with standard 13 V logic, and thermal performance under forced-air-limited board-level cooling.

Technical Context

This CoolMOS™ CE device uses charge-compensated superjunction architecture to achieve low R_DS(on) × Q_g figure-of-merit (FOM) while maintaining robust dv/dt immunity (50 V/ns) and high commutation ruggedness (185 mJ single-pulse avalanche energy). Its 5.4 V gate plateau voltage enables stable turn-on under varying drive conditions.

The integrated body diode exhibits 320 ns reverse recovery time and 3.1 µC Q_rr at 400 V, supporting ZVS-capable topologies. Thermal resistance from junction-to-case is 4.1 °C/W, requiring mechanical mounting via M2.5 screws with 50 Ncm torque for optimal heat transfer in FullPAK configuration.

Key Specifications

Pinout & Package

IPA60R460CEXKSA1 is housed in PG-TO220FP (FullPAK) package with isolated tab. Drain connects to the metal tab for direct heatsinking; Gate and Source are leaded terminals on the same side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPD60R460CE and STP60N4F6, IPA60R460CEXKSA1 offers superior thermal coupling via FullPAK tab, lowest E_oss among the three, and optimized FOM for 65–100 kHz PFC-making it the preferred choice for thermally constrained, efficiency-critical lighting and adapter platforms.

Availability

IPA60R460CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and indoor lighting ballasts requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA60R460CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE product line, engineered specifically for cost-sensitive, high-efficiency AC/DC conversion in consumer lighting and adapter applications-balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum recommended gate resistor value for IPA60R460CEXKSA1 in a 65 kHz PFC application?

A 6.8 Ω external gate resistor is validated in the datasheet for 400 V bus operation with 13 V drive, yielding 11 ns turn-on delay and 70 ns turn-off delay. Higher values (>15 Ω) increase switching loss and risk incomplete turn-on during fast transients; lower values (<4.7 Ω) may cause ringing due to PCB inductance interacting with 8.5 Ω internal R_G.

Can IPA60R460CEXKSA1 be paralleled for higher current capacity?

Yes, but only with strict layout symmetry and individual ferrite beads on each gate line (as noted in datasheet Note 1). Mismatched trace inductance or thermal gradients cause current imbalance; parallel operation requires matched V_GS(th) units (±0.2 V) and shared source Kelvin connection to avoid oscillation.

Is the TO-220FP package of IPA60R460CEXKSA1 electrically insulated?

No-the metal tab is internally connected to the Drain terminal and is not electrically isolated. An insulating pad or shoulder washer must be used between the tab and any grounded heatsink. The 2500 V_rms insulation withstand rating applies only to creepage/clearance across the molded body, not tab-to-heatsink isolation.

How does the body diode performance compare to discrete ultrafast diodes in QR flyback designs?

Its 320 ns t_rr and 3.1 µC Q_rr are competitive with 600 V ultrafast diodes (e.g., UF4007), enabling self-commutated QR operation without external snubbers. However, forward voltage (0.9 V at 4.2 A) is higher than Schottky alternatives, so conduction loss dominates at light loads-designers should verify efficiency curves across 10–100% load range.