Infineon Technologies IPA60R520C6XKSA1
- Part No.:
- IPA60R520C6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPA60R520C6XKSA1.pdf
- Description:
- MOSFET N-CH 600V 8.1A TO220-FP
- Quantity:
- Payment:

- Shipping:

Inventory:6,397
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IPA60R520C6XKSA1 from Infineon Technologies is a 600 V, 11 A (TC = 100 °C) superjunction MOSFET in TO-220FP package, featuring RDS(on) = 520 mΩ (max), optimized for hard-switching and resonant SMPS topologies in server power supplies, LED drivers, and industrial AC-DC converters.
For engineers reviewing the IPA60R520C6XKSA1 datasheet, IPA60R520C6XKSA1 pinout, IPA60R520C6XKSA1 application, or IPA60R520C6XKSA1 equivalent, key selection criteria include its low gate charge (QG = 27 nC), fast switching (ton = 18 ns, toff = 74 ns), and robust avalanche rating (EAS = 290 mJ) - critical for high-efficiency, compact 600 V PFC and LLC stages.
Technical Context
This CoolMOS™ C6 device employs Infineon's superjunction technology with optimized charge balance, enabling lower RDS(on) × QG figure-of-merit than prior generations. Its gate threshold voltage (VGS(th) = 3.2–4.2 V) ensures stable turn-on under wide drive conditions, while low Ciss (1,100 pF) and Coss (90 pF) support high-frequency operation up to 300 kHz.
The device integrates intrinsic fast-recovery body diode (trr = 120 ns, Qrr = 1.9 µC) with soft recovery characteristics, reducing EMI and snubber losses in bridge configurations. Thermal resistance RthJC = 1.2 K/W (TO-220FP) enables reliable conduction at TJ ≤ 150 °C under continuous 11 A drain current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - rated blocking voltage for primary-side switching in universal-input offline SMPS. |
| RDS(on) max | 520 mΩ at VGS = 10 V, TJ = 100 °C - determines conduction loss in continuous-current PFC and LLC half-bridge legs. |
| ID cont | 11 A at TC = 100 °C - defines maximum steady-state current handling without derating in forced-air-cooled designs. |
| QG | 27 nC - low total gate charge reduces driver power and enables efficient 200–300 kHz operation with standard gate drivers. |
| EAS | 290 mJ - single-pulse avalanche energy rating supports unclamped inductive switching in flyback and forward converters. |
| tr/tf | 12 ns / 22 ns - fast rise/fall times minimize switching transition losses and reduce required dead time in synchronous rectification. |
| RthJC | 1.2 K/W - junction-to-case thermal resistance enables direct heatsink mounting in TO-220FP for <15 W conduction loss dissipation. |
Pinout & Package
IPA60R520C6XKSA1 is housed in a TO-220FP (Full-Pak) package: insulated plastic case with internal drain tab connected to lead 2, non-isolated source (lead 1), and gate (lead 3). The package provides creepage/clearance compliance for reinforced insulation in 600 V systems and allows direct PCB mounting without insulating washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Source) | Source terminal | Low-side reference node; connects directly to PCB ground plane or source return path with minimal inductance. |
| Lead 2 (Drain) | Drain terminal | High-voltage switching node; internally bonded to metal tab for thermal conduction and electrical connection to heatsink. |
| Lead 3 (Gate) | Control input | High-impedance MOS gate requiring <100 Ω series resistance to damp ringing; referenced to source potential. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) × QG | 14.0 Ω·nC - improves efficiency in high-frequency PFC by reducing combined conduction and switching loss. |
| Soft body diode recovery | trr = 120 ns, Qrr = 1.9 µC - minimizes voltage overshoot and EMI during ZVS transitions in LLC resonant converters. |
| Enhanced avalanche ruggedness | EAS = 290 mJ - eliminates need for external clamping in flyback snubberless designs operating near peak line. |
| Qualified per JEDEC JESD47 | 100% UIS tested - guarantees robustness against unclamped inductive switching stress in production environments. |
| Lead-free and RoHS compliant | Halogen-free package - meets IPC/JEDEC J-STD-020 reflow profile for Pb-free assembly without solder joint reliability risk. |
Applications
| Server Power Supply | Industrial LED Driver |
|---|---|
|
Use Scenario: Primary-side switch in active clamp forward converter delivering 1.5 kW at 94% efficiency. IC Role / Device Role / Timing Role: High-side switching element controlling energy transfer from bulk DC to transformer primary, operating at 200 kHz with zero-voltage switching. Use Value: 520 mΩ RDS(on) and 27 nC QG enable >10 W reduction in conduction + switching loss versus previous-generation 650 V MOSFETs. |
Use Scenario: Half-bridge switch in 400 W constant-current LED driver for high-bay lighting. IC Role / Device Role / Timing Role: Low-loss switching transistor in resonant LLC topology, managing 350–450 V DC bus with 300 kHz fundamental frequency. Use Value: Soft-recovery body diode eliminates need for external anti-parallel SiC Schottky, reducing BOM count and layout area by 25%. |
| Telecom Rectifier | EV Charger Auxiliary PSU |
|
Use Scenario: Input switch in 3 kW telecom rectifier front-end with boost PFC stage. IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter, handling 11 A RMS input current. Use Value: RthJC = 1.2 K/W allows direct heatsink mounting without thermal interface material, cutting thermal resistance by 0.8 K/W vs. standard TO-220. |
Use Scenario: Primary switch in isolated 30 W auxiliary power supply for EV on-board charger control board. IC Role / Device Role / Timing Role: 600 V flyback switch operating in quasi-resonant mode across universal AC input (85–265 VAC). Use Value: 290 mJ EAS rating supports reliable operation without snubber network, simplifying design and improving no-load efficiency by 0.4%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60N6F6 | RDS(on) = 550 mΩ, QG = 32 nC, EAS = 220 mJ - higher switching loss and lower avalanche margin. | Limited to <200 kHz operation due to higher Ciss (1,350 pF); requires larger gate driver. | Acceptable for cost-sensitive 100–150 kHz PFC where efficiency >93% is sufficient. |
| IXTH50N60L2 | RDS(on) = 500 mΩ, QG = 45 nC, trr = 210 ns - lower RDS(on) but slower diode and higher gate drive demand. | Body diode recovery causes higher EMI in LLC; needs snubber in ZVS-critical designs. | Suitable for hard-switched forward converters where diode softness is not required. |
Compared with STP60N6F6 and IXTH50N60L2, IPA60R520C6XKSA1 delivers superior RDS(on) × QG trade-off and industry-leading avalanche energy, making it optimal for high-density, high-efficiency 200–300 kHz SMPS where thermal headroom and EMI control are constrained.
Availability
IPA60R520C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial LED drivers, and telecom rectifiers requiring stable component supply and long-term industrial lifecycle support.
Supply support for IPA60R520C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.
The CoolMOS™ C6 product line targets high-efficiency, high-power-density AC-DC conversion, specifically engineered to replace older superjunction MOSFETs in 600–650 V SMPS applications demanding low loss and high reliability.
FAQ
What is the maximum continuous drain current for IPA60R520C6XKSA1 at 100 °C case temperature?
The maximum continuous drain current ID is 11 A when the case temperature TC is maintained at 100 °C, as specified in the Absolute Maximum Ratings table of the Rev. 2.2 datasheet. This rating assumes proper heatsinking and excludes pulse conditions or transient overload scenarios.
Does IPA60R520C6XKSA1 require a negative gate turn-off voltage?
No - IPA60R520C6XKSA1 has a positive gate threshold voltage range of 3.2–4.2 V and is designed for standard 0 V/10–15 V gate drive. Negative turn-off voltage is not required or recommended; maintaining gate-source voltage ≥ –20 V avoids latch-up or parasitic thyristor activation.
Can IPA60R520C6XKSA1 be paralleled with identical units for higher current capacity?
Yes - the device exhibits positive temperature coefficient for RDS(on), enabling stable current sharing when paralleled. Designers must match gate drive loop inductance and use individual gate resistors (≥10 Ω) to prevent oscillation; layout symmetry is critical for thermal and dynamic balance.
Is the TO-220FP package of IPA60R520C6XKSA1 electrically insulated?
Yes - the TO-220FP package features an insulated metal tab (drain-connected) with 2.5 kV AC isolation rating between drain and mounting surface. This eliminates need for insulating pads or shoulder washers in Class I safety-compliant designs, provided minimum creepage distances are maintained per IEC 62368-1.
IPA60R520C6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 520mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs:
- 23.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 512 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 29W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-FP
IPA60R520C6XKSA1 FAQ
1.How can I place an order for IPA60R520C6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPA60R520C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPA60R520C6XKSA1 reliable?
The price and inventory of IPA60R520C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R520C6XKSA1 is usually 5 days.
3.What payment methods are accepted for IPA60R520C6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R520C6XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPA60R520C6XKSA1?
IPA60R520C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPA60R520C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPA60R520C6XKSA1?
For technical support, including IPA60R520C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R520C6XKSA1 requirements.
6.How does Aetrix verify that IPA60R520C6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPA60R520C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R520C6XKSA1 meets industry standards.
7.What is the process for return or replacement of IPA60R520C6XKSA1?
All IPA60R520C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R520C6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPA60R520C6XKSA1 part is unused and in its original packaging.
Return procedure for IPA60R520C6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IPA60R520C6XKSA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

