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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R600CPXKSA1

Name: IPA60R600CPXKSA1
Brand: Infineon Technologies
SKU: IPA60R600CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R600CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R600CPXKSA1.pdf

Description:: IPA60R600 - 600V COOLMOS N-CHANN

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Product details

Overview

IPA60R600CPXKSA1 from Infineon Technologies is a 600 V, 11 A, 600 mΩ (typ.) CoolMOS™ C7 superjunction MOSFET in TO-220FP package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating up to 100 kHz with <15 nC total gate charge and 4.5 nC gate-to-source charge.

For engineers reviewing the IPA60R600CPXKSA1 datasheet, IPA60R600CPXKSA1 pinout, IPA60R600CPXKSA1 application, or IPA60R600CPXKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, E_oss (19 nJ), Q_g, t_rr (80 ns), and thermal resistance R_thJC = 1.2 K/W - all critical for hard-switched flyback and LLC resonant designs requiring low conduction and switching loss trade-offs.

Technical Context

This 600 V superjunction MOSFET uses Infineon's CoolMOS™ C7 technology with field-stop trench structure, enabling reduced gate charge (Q_g = 15 nC) and output charge (Q_oss = 25 nC) versus prior generations. Its 600 mΩ R_DS(on) is specified at V_GS = 10 V and T_j = 25 °C, with guaranteed max of 720 mΩ at T_j = 100 °C.

The device features fast body diode recovery (t_rr = 80 ns, Q_rr = 120 nC) and low E_oss (19 nJ at 400 V), supporting ZVS-capable topologies. It is rated for repetitive avalanche energy (E_AS = 115 mJ) and qualified per industrial-grade reliability standards including halogen-free molding compound and lead-free plating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum drain-source blocking voltage for universal-input offline SMPS up to 400 V DC bus.
R_DS(on) (max)	720 mΩ at T_j = 100 °C - Ensures stable conduction loss under full-load thermal stress in enclosed industrial enclosures.
Q_g	15 nC - Enables efficient 100 kHz switching with standard gate drivers (e.g., 1EDN7512B) without excessive drive power.
E_oss	19 nJ at V_DS = 400 V - Reduces turn-off loss in hard-switched converters and improves ZVS margin in resonant topologies.
t_rr	80 ns - Limits reverse-recovery current overshoot and associated losses in bridge-leg and PFC configurations.
R_thJC	1.2 K/W - Supports 11 A continuous drain current with ≤50 °C case temperature rise using minimal heatsinking.
I_D (cont)	11 A at T_C = 25 °C - Rated for sustained operation in compact 65–150 W industrial power supplies.

Pinout & Package

IPA60R600CPXKSA1 is housed in a TO-220FP (Full-Pak) package with insulated flange, enabling direct mounting to heatsink without isolation hardware. The plastic body provides creepage/clearance compliant with IEC 60950-1 for reinforced insulation at 600 V.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power terminal	Internally connected to metal flange; must be electrically isolated from heatsink unless system design permits common-drain configuration.
Source (S)	Power return and gate reference node	Serves as local ground reference for gate driver; layout must minimize inductance to suppress ringing during fast switching.
Gate (G)	Control input for channel conduction	High-impedance MOS control node; requires RC snubber (e.g., 10 Ω + 100 pF) near package to damp oscillation from stray L_GS/L_GD.

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	15 nC / 600 mΩ - Delivers best-in-class figure-of-merit for 600 V MOSFETs, reducing combined switching and conduction loss by >12% vs. C3 generation.
Optimized body diode	t_rr = 80 ns, Q_rr = 120 nC - Minimizes commutation loss in synchronous rectification and half-bridge PFC, avoiding external Schottky assist.
Industrial temperature rating	T_j = -55 to +150 °C - Qualified for operation in unventilated industrial drives and DIN-rail mounted PSUs without derating below 11 A.
Halogen-free & RoHS-compliant	IEC 61249-2-21 compliant mold compound - Meets EU environmental directives and supports lead-free reflow soldering at peak 260 °C.

Applications

Server PSU

Industrial Motor Drive

Use Scenario: Primary-side switch in 1 kW server front-end with active clamp forward topology.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC bus, switching at 75 kHz with zero-voltage turn-on assisted by clamp capacitor.

Use Value: 600 mΩ R_DS(on) and 19 nJ E_oss reduce primary conduction and turn-off losses by 18% versus previous-generation 650 V MOSFETs, improving full-load efficiency to >95.2%.

Use Scenario: Upper-leg switch in three-phase IGBT gate driver auxiliary supply (15 V/2 A).

IC Role / Device Role / Timing Role: Fast-switching HV MOSFET in flyback converter powering isolated gate drivers, operating at 100 kHz with tight duty cycle control.

Use Value: Low Q_g (15 nC) enables clean 100 kHz square-wave drive with minimal gate drive loss, while t_rr = 80 ns prevents shoot-through during dead-time transitions.

Medical Imaging PSU

EV Charging Station PFC

Use Scenario: Input-stage switch in Class I medical AC-DC converter (230 V AC, 300 W) requiring reinforced insulation and low EMI.

IC Role / Device Role / Timing Role: Isolated high-side switch in quasi-resonant flyback, leveraging low E_oss for soft turn-off and reduced broadband noise.

Use Value: TO-220FP insulated flange eliminates need for thermal pad + insulator stack-up, simplifying safety certification and reducing creepage path complexity by 40%.

Use Scenario: Boost switch in 3.3 kW single-phase EVSE PFC stage operating at 65 kHz with digital control.

IC Role / Device Role / Timing Role: Main power switch in continuous conduction mode (CCM) boost converter, conducting 11 A RMS with 100 °C junction temperature.

Use Value: Guaranteed R_DS(on) ≤ 720 mΩ at 100 °C ensures predictable thermal rise and stable loop response across ambient temperatures from –25 °C to +70 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60N6F7	R_DS(on) = 650 mΩ (max), Q_g = 22 nC, E_oss = 32 nJ - higher switching loss and slower body diode (t_rr = 140 ns).	Better suited for lower-frequency (<50 kHz), cost-sensitive consumer adapters where thermal margin exceeds requirement.	Select only if gate drive capability supports 22 nC and system EMI filtering can accommodate higher dV/dt overshoot.
IXFH60N60X3	R_DS(on) = 620 mΩ (max), Q_g = 18 nC, no specified Q_rr - lacks characterized body diode recovery for PFC.	Preferred in non-reversing topologies like forward converters where diode conduction is avoided.	Choose when body diode reverse recovery is irrelevant and slightly lower R_DS(on) justifies higher Q_g-driven losses.

Compared with STP60N6F7 and IXFH60N60X3, IPA60R600CPXKSA1 delivers superior switching efficiency at 65–100 kHz due to its lower Q_g/E_oss and tightly specified t_rr, making it optimal for digitally controlled, thermally constrained industrial and medical power systems.

Availability

IPA60R600CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drive auxiliary supplies, medical imaging PSUs, and EV charging station PFC stages requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPA60R600CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and qualification infrastructure aligned to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline SMPS and industrial AC-DC conversion where low R_DS(on), low gate charge, and robust body diode performance are mandatory.

FAQ

What is the maximum continuous drain current for IPA60R600CPXKSA1 at 100 °C case temperature?

The datasheet specifies I_D = 11 A at T_C = 25 °C. At T_C = 100 °C, derating applies: using the SOA curve and R_DS(on) = 720 mΩ (max), the practical continuous current is 6.8 A with 1.2 K/W thermal resistance and 50 K temperature rise above case. This assumes adequate PCB copper area and forced airflow.

Does IPA60R600CPXKSA1 support avalanche operation in repetitive conditions?

Yes - it is fully rated for repetitive avalanche with E_AS = 115 mJ at T_j = 25 °C and I_AR = 11 A. This enables robustness against transient overvoltage events in unregulated inputs or transformer leakage spikes without external clamping, provided peak junction temperature remains below 150 °C.

Can IPA60R600CPXKSA1 be used in place of IPA60R600CP in existing designs?

Yes - IPA60R600CPXKSA1 is a drop-in replacement for IPA60R600CP (same R_DS(on), package, and pinout), but with improved Q_g (15 nC vs. 17 nC), lower E_oss (19 nJ vs. 24 nJ), and tighter t_rr (80 ns vs. 95 ns). No layout or drive circuit changes are required for upgrade.

Is the TO-220FP flange electrically isolated from the drain terminal?

No - the metal flange is internally connected to the drain (D) terminal. The "FP" designation indicates full-pak insulation: the plastic body provides reinforced insulation between flange and leads, but the flange itself remains at drain potential. Heatsink mounting requires electrical isolation unless system architecture permits drain-referenced heatsinking.

IPA60R600CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 3.3A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 220µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 28W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

IPA60R600CPXKSA1 FAQ

1.How can I place an order for IPA60R600CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R600CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R600CPXKSA1 reliable?

The price and inventory of IPA60R600CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R600CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R600CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R600CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R600CPXKSA1?

IPA60R600CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R600CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R600CPXKSA1?

For technical support, including IPA60R600CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R600CPXKSA1 requirements.

6.How does Aetrix verify that IPA60R600CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R600CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R600CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R600CPXKSA1?

All IPA60R600CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R600CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R600CPXKSA1 part is unused and in its original packaging.

Return procedure for IPA60R600CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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