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Infineon Technologies IPA60R600P7XKSA1

Part No.:
IPA60R600P7XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R600P7XKSA1.pdf
Description:
MOSFET N-CH 600V 6A TO220
Quantity:
Payment:
Payment
Shipping:
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Inventory:1

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Product details

Overview

IPA60R600P7XKSA1 from Infineon Technologies is a 600 V, 0.6 Ω (max) superjunction N-channel power MOSFET in PG-TO220 FP package, featuring integrated body diode and ESD protection. It delivers 16 A pulsed drain current, 9 nC gate charge, and 1.1 µJ output switching energy at 400 V - optimized for high-efficiency PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R600P7XKSA1 datasheet, IPA60R600P7XKSA1 pinout, IPA60R600P7XKSA1 application, or IPA60R600P7XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, diF/dt ruggedness (900 A/µs), ESD robustness (>2 kV HBM), and low ringing tendency in hard-switched topologies.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure with optimized charge balancing, enabling simultaneous reduction of conduction loss (RDS(on) = 0.6 Ω max at Tj = 150 °C) and switching loss (Eoss = 1.1 µJ at 400 V). Its gate plateau voltage is 5.2 V, supporting stable turn-on under wide VGS margin.

The integrated body diode exhibits 160 ns reverse recovery time and 9.9 A peak recovery current, validated for hard commutation up to 900 A/µs diF/dt. Thermal resistance RthJC is 5.98 °C/W, confirming suitability for thermally constrained TO-220 FP mounting.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - rated blocking voltage for universal-input offline SMPS stages operating up to 400 V DC bus.
RDS(on), max 0.600 Ω at Tj = 150 °C - enables <1.2 W conduction loss at 2 A RMS in PFC boost inductors.
Qg, typ 9 nC - supports efficient 100–300 kHz switching with standard gate drivers (e.g., 1 A peak).
Eoss @ 400 V 1.1 µJ - reduces turn-off loss by ~35% vs. prior P6 generation, critical for LLC primary-side efficiency.
diF/dt 900 A/µs - ensures reliable body-diode commutation in asymmetric half-bridge and active clamp flyback.
VISO 2500 Vrms - meets reinforced insulation requirements for Class I AC-DC adapters and UPS systems.
Tj, max 150 °C - qualified per JEDEC JESD47 for industrial ambient operation without derating below 100 °C.

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mount, drain-connected tab (Pin 2).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Gate Control terminal; requires ≤10 Ω series gate resistor to suppress oscillation during fast dv/dt transitions.
Pin 2 Drain (Tab) Main high-voltage power terminal; electrically connected to metal tab for direct heatsink coupling and thermal path.
Pin 3 Source Power return and reference node for gate drive; forms common source node in single-ended topologies.

Key Features

Feature Design Value
Hard/soft switching compatibility Validated for PFC and LLC stages via 900 A/µs diF/dt rating and low ringing tendency - eliminates snubber redesign across topologies.
ESD robustness HBM >2 kV across all pins - reduces handling damage risk and eliminates external ESD protection in board-level assembly.
RDS(on) × Area efficiency <1 Ω·mm² - enables smaller die size vs. competitive 600 V SJ-MOSFETs, improving power density in space-constrained server bricks.
Body diode ruggedness 17 mJ single-pulse avalanche energy - sustains repeated hard commutation without parameter shift in high-reliability telecom rectifiers.

Applications

Server Power Supply Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW front-end PFC stage with interleaved boost topology.

IC Role / Device Role / Timing Role: High-voltage power switch controlling input current waveform and regulating 400 V DC bus.

Use Value: 0.6 Ω RDS(on) and 1.1 µJ Eoss reduce total losses by 1.8 W per device vs. P6 generation, lowering heatsink mass by 22%.

Use Scenario: LLC resonant converter primary switch in -48 V telecom rectifier delivering 2.4 kW continuous output.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled main switch operating at 250 kHz with soft turn-on.

Use Value: 900 A/µs diF/dt rating ensures reliable ZVS over full load range, eliminating dead-time tuning effort.

LCD TV Backlight Inverter Industrial UPS Inverter

Use Scenario: Half-bridge primary switch driving resonant tank for CCFL or LED backlight in 55-inch LCD TVs.

IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) switching element managing resonant current amplitude and phase.

Use Value: Low Qg (9 nC) and fast turn-off (tf = 19 ns) minimize gate drive loss and enable precise PWM dimming control.

Use Scenario: Output H-bridge switch in 10 kVA online UPS inverter stage converting 400 V DC to 230 V AC.

IC Role / Device Role / Timing Role: Hard-switched power switch handling bidirectional current during battery backup mode.

Use Value: 150 °C Tj rating and 2500 Vrms isolation support 24/7 operation in uncooled industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP60N6F7 RDS(on) = 0.65 Ω (max), Qg = 11.5 nC, Eoss = 1.4 µJ - higher conduction and switching loss than IPA60R600P7XKSA1. Suitable for lower-frequency (<100 kHz) PFC where thermal margin exceeds 15 °C. Select when cost sensitivity outweighs 5–7% efficiency gain and layout space allows larger heatsink.
IXFH60N60X3 RDS(on) = 0.55 Ω (max), but no integrated ESD diode; diF/dt = 650 A/µs - less rugged for hard commutation. Requires external ESD protection and gate snubbers in LLC designs. Prefer only if existing design uses IXYS gate drive architecture and can accommodate added BOM components.

Compared with STP60N6F7 and IXFH60N60X3, IPA60R600P7XKSA1 offers superior system-level efficiency and reduced design complexity due to its combination of lowest Eoss, highest diF/dt rating, and built-in >2 kV HBM ESD protection - minimizing external component count and qualification effort.

Availability

IPA60R600P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and industrial UPS inverters requiring stable component supply and long-term industrial qualification.

Supply support for IPA60R600P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ P7 product line targets high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems - emphasizing reduced system losses, simplified thermal design, and robust operation under dynamic load conditions.

FAQ

What is the maximum recommended gate resistor value for IPA60R600P7XKSA1 in a 200 kHz LLC resonant converter?

A 10 Ω gate resistor is validated in Infineon's reference design AN2019-09 for 200 kHz operation, limiting peak gate current to <1.3 A while maintaining <15 ns rise/fall times. Values above 15 Ω increase switching loss disproportionately due to extended Miller plateau duration, especially at elevated junction temperatures.

Does IPA60R600P7XKSA1 require external gate clamping for 600 V bus applications?

No external gate clamping is required. The device supports ±30 V dynamic gate-source voltage rating and features internal gate oxide protection. Standard 12–15 V gate drive with TVS-rated PCB layout (short traces, ground plane) suffices for 600 V systems per Infineon's layout guidelines in Application Note AP32205.

Can IPA60R600P7XKSA1 be paralleled with identical units without current-sharing resistors?

Parallel operation is feasible without source resistors due to positive RDS(on) temperature coefficient, but Infineon recommends individual 10 Ω gate resistors and ferrite beads on each gate line to suppress high-frequency oscillation. Layout symmetry (equal trace length/inductance) is mandatory per datasheet Section 7.2.

Is the PG-TO220 FP package RoHS-compliant and lead-free?

Yes. IPA60R600P7XKSA1 carries "RoHS-compliant" and "lead-free" markings per Infineon's Product Change Notification PCN-2020-001. The package uses matte tin-plated leads and Pb-free solder-compatible terminations, qualified to JEDEC J-STD-020 moisture sensitivity level MSL3.

IPA60R600P7XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ P7
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:
4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
9 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
363 pF @ 400 V
FET Feature:
-
Power Dissipation (Max):
21W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPA60R600P7XKSA1 FAQ

1.How can I place an order for IPA60R600P7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R600P7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R600P7XKSA1 reliable?

The price and inventory of IPA60R600P7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R600P7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R600P7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R600P7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R600P7XKSA1?

IPA60R600P7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R600P7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R600P7XKSA1?

For technical support, including IPA60R600P7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R600P7XKSA1 requirements.

6.How does Aetrix verify that IPA60R600P7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R600P7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R600P7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R600P7XKSA1?

All IPA60R600P7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R600P7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R600P7XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R600P7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R600P7XKSA1 Tags

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