Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPA60R800CEXKSA1

Part No.:
IPA60R800CEXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R800CEXKSA1.pdf
Description:
MOSFET N-CH 600V 5.6A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,438

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPA60R800CEXKSA1 from Infineon Technologies is a 600 V, 0.8 Ω RDS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO220FP (FullPAK) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant SMPS stages. It delivers 8.4 A continuous drain current at TC = 25°C, 17.2 nC total gate charge, and 1.6 µJ output energy at 400 V - enabling compact PFC and main switch designs in LCD TV, PC Silverbox, and indoor lighting.

For engineers reviewing the IPA60R800CEXKSA1 datasheet, IPA60R800CEXKSA1 pinout, IPA60R800CEXKSA1 application, or IPA60R800CEXKSA1 equivalent, key selection criteria include its 4.6 °C/W RthJC, 50 V/ns dv/dt ruggedness, low Eoss, and TO-220FP insulation rating of 2500 VRMS - critical for reliable high-voltage AC-DC conversion.

Technical Context

This device implements Infineon's CoolMOS™ CE superjunction architecture with optimized charge balance for reduced conduction and switching losses. Its 2.5–3.5 V gate threshold voltage and 5.4 V gate plateau enable robust drive compatibility with standard 12 V gate drivers while maintaining noise immunity.

The integrated body diode exhibits 250 ns reverse recovery time and 1.8 µC Qrr at 400 V, supporting ZVS operation in LLC resonant converters. Thermal design is anchored by a 4.6 °C/W junction-to-case resistance and 2500 VRMS isolation - essential for safety-compliant, high-density power supplies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS max650 V - supports 400 V DC bus with 62.5% derating margin for surge and ringing
RDS(on) max @ 150°C0.80 Ω - ensures stable conduction loss up to full operating temperature range
Qg typ17.2 nC - enables efficient 100–300 kHz switching with moderate gate driver strength
Eoss @ 400 V1.6 µJ - reduces turn-on loss and improves light-load efficiency in PFC and PWM stages
RthJC4.6 °C/W - allows 27 W power dissipation at TC = 25°C with minimal heatsink requirement
dv/dt ruggedness50 V/ns - sustains fast voltage transients without spurious turn-on in high-dV/dt topologies
VISO2500 VRMS - meets reinforced insulation requirements for Class I/II AC-DC adapters and lighting

Pinout & Package

IPA60R800CEXKSA1 uses the PG-TO220FP (FullPAK) package with isolated tab: thermally conductive drain-connected metal tab on backside, insulated from mounting surface by internal dielectric layer. Package outline conforms to JEDEC TO-220FP standard with M2.5 screw mount (50 Ncm torque).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Lead)GateControl terminal requiring <18 nC charge; compatible with standard 12 V logic-level drivers
Pin 2 (Tab)DrainMain high-side power path; electrically isolated tab enables direct heatsink mounting without insulator
Pin 3 (Lead)SourcePower return and gate reference node; low-inductance connection critical for EMI control

Key Features

FeatureDesign Value
Ultra-low FOM (RDS(on) × Qg)13.76 Ω·nC - minimizes combined conduction and switching loss trade-off in 65–300 kHz designs
High commutation ruggedness72 mJ single-pulse avalanche energy - withstands transient overvoltage without failure during hard-switching faults
Easy gate drive3.0 V typical VGS(th) and 5.4 V plateau - eliminates need for negative gate bias or complex level-shifting
Pb-free & halogen-freeRoHS-compliant plating and mold compound - satisfies environmental compliance for global consumer electronics
Standard grade qualificationRated for Tj = –40 to +150°C - validated for industrial ambient and thermally stressed lighting environments

Applications

LED Driver Power StagePC ATX PFC Switch

Use Scenario: Constant-current LED driver for commercial indoor lighting with 380 V DC bus and 100–250 kHz boost PFC stage.

IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter, handling 8.4 A peak inductor current.

Use Value: Low 0.8 Ω RDS(on) at 150°C and 1.6 µJ Eoss reduce thermal stress and improve system efficiency >94% at full load.

Use Scenario: Active PFC front-end in 500 W PC Silverbox supply operating at 65 kHz with universal AC input.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC, driven by UCC28070 controller with 13 V gate drive.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during line-voltage zero-crossing transitions.

LCD TV SMPS Primary SwitchAdapter Resonant LLC Switch

Use Scenario: 120 W flyback or quasi-resonant (QR) forward converter in 32-inch LCD TV power board.

IC Role / Device Role / Timing Role: Primary-side power switch operating in boundary conduction mode (BCM) with 250 kHz peak frequency.

Use Value: 250 ns trr and 1.8 µC Qrr minimize body-diode conduction loss during ZVS transitions, reducing heat sink size by 30%.

Use Scenario: Half-bridge primary switch in 65 W USB-C PD adapter using LLC topology with 300–500 kHz variable frequency.

IC Role / Device Role / Timing Role: High-frequency resonant switch with soft-switching operation enabled by low Coss (27 pF) and Co(er) = 18 pF.

Use Value: 18 pF effective output capacitance enables precise ZVS timing control across wide load range, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPD60R800CEDifferent package: PG-TO252 (DPAK), RthJC = 1.70 °C/W, no isolation, lower Ptot = 74 WSuitable for SMT-based, space-constrained PCBs but requires external heatsink and isolationSelect when board-level thermal management favors surface-mount layout and isolation is handled externally
STP60N80M5Higher RDS(on) = 0.078 Ω, higher Qg = 120 nC, different gate threshold (2–4 V), no specified EossBetter suited for lower-frequency (<100 kHz), high-current linear-regulated applicationsChoose only if gate drive capability exceeds 2 A peak and thermal budget permits higher conduction loss

Compared with IPD60R800CE and STP60N80M5, IPA60R800CEXKSA1 offers superior high-frequency efficiency via lower Eoss and integrated isolation, making it optimal for compact, safety-certified, medium-power SMPS where thermal and EMI constraints dominate.

Availability

IPA60R800CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC ATX PFC circuits, LCD TV SMPS, and USB-C PD adapter resonant converters requiring stable component supply and long-term lifecycle support.

Supply support for IPA60R800CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ CE product line - engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer and lighting applications, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum continuous drain current for IPA60R800CEXKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.3 A at TC = 100°C, as specified in Table 2 of the Rev. 2.3 datasheet. This derating reflects thermal limits of the TO-220FP package and ensures safe operation under sustained high-temperature conditions without exceeding 150°C junction temperature.

Does IPA60R800CEXKSA1 require a gate resistor for stability in hard-switching applications?

Yes - a gate resistor of 6.8 Ω is used in the datasheet's switching time test circuit (Table 6). For production designs, a 5–10 Ω series gate resistor is recommended to dampen ringing, limit peak gate current, and ensure controlled dv/dt during turn-on/turn-off, especially in high-di/dt PFC stages.

Can IPA60R800CEXKSA1 be paralleled with identical units?

Yes, but with precautions: Infineon recommends ferrite beads on individual gate lines or separate totem-pole drivers to balance dynamic current sharing. Layout symmetry, matched gate loop inductance, and thermal coupling must be carefully controlled to avoid current imbalance and thermal runaway.

What is the rated insulation voltage and how is it verified?

The device is rated for 2500 VRMS insulation withstand voltage (1 minute, 25°C), measured between drain (tab) and source/lead terminals. This value is confirmed per IEC 60747-17 and applies to the internal dielectric barrier in the FullPAK construction - enabling direct heatsink mounting without external insulators in Class II designs.

IPA60R800CEXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ CE
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
373 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
27W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPA60R800CEXKSA1 FAQ

1.How can I place an order for IPA60R800CEXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R800CEXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R800CEXKSA1 reliable?

The price and inventory of IPA60R800CEXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R800CEXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R800CEXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R800CEXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R800CEXKSA1?

IPA60R800CEXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R800CEXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R800CEXKSA1?

For technical support, including IPA60R800CEXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R800CEXKSA1 requirements.

6.How does Aetrix verify that IPA60R800CEXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R800CEXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R800CEXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R800CEXKSA1?

All IPA60R800CEXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R800CEXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R800CEXKSA1 part is unused and in its original packaging.

Return procedure for IPA60R800CEXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R800CEXKSA1 Tags

  • IPA60R800CEXKSA1
  • IPA60R800CEXKSA1 PDF
  • IPA60R800CEXKSA1 Datasheet
  • IPA60R800CEXKSA1 Specifications
  • IPA60R800CEXKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPA60R800CEXKSA1
  • Buy IPA60R800CEXKSA1
  • IPA60R800CEXKSA1 Price
  • IPA60R800CEXKSA1 Distributor
  • IPA60R800CEXKSA1 Supplier
  • IPA60R800CEXKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER