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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R045C7XKSA1

Name: IPA65R045C7XKSA1
Brand: Infineon Technologies
SKU: IPA65R045C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R045C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R045C7XKSA1.pdf

Description:: MOSFET N-CH 650V 18A TO220-FP

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Product details

Overview

IPA65R045C7XKSA1 from Infineon Technologies is a 650 V, 45 mΩ superjunction N-channel power MOSFET in the CoolMOS™ C7 family, optimized for high-frequency hard-switching and PFC stages. It delivers 93 nC total gate charge, 11.7 µJ output switching energy at 400 V, and supports 212 A pulsed drain current. Used in server PSU front-end PFC and telecom rectifier modules.

For engineers reviewing the IPA65R045C7XKSA1 datasheet, IPA65R045C7XKSA1 pinout, IPA65R045C7XKSA1 application, or IPA65R045C7XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM, dv/dt ruggedness (100 V/ns), body diode dI/dt capability (60 A/µs), and TO-220 FP package thermal resistance (3.6 °C/W).

Technical Context

This device implements Infineon's superjunction architecture with charge compensation pillars to achieve low R_DS(on) × E_oss and R_DS(on) × Q_g figures of merit. Its gate plateau voltage is 5.4 V, enabling robust drive margin with standard 12 V gate drivers.

The MOSFET features enhanced avalanche ruggedness (249 mJ single-pulse E_AS) and reverse diode commutation speed up to 60 A/µs under 400 V conditions. It is qualified for industrial-grade operation (−55 °C to +150 °C) and meets JEDEC J-STD-20/JESD22 reliability standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for 400 V DC-link PFC and offline SMPS applications
R_DS(on), max	45 mΩ @ T_j = 25 °C - enables low conduction loss in 1–3 kW continuous power stages
Q_g, typ	93 nC - reduces gate driver power demand and simplifies 13 V logic-level drive implementation
E_oss @ 400 V	11.7 µJ - lowers turn-off loss and supports >100 kHz switching in interleaved PFC
dV/dt ruggedness	100 V/ns - sustains fast voltage transients without spurious turn-on in high-dI/dt layouts
Body diode dI/dt	60 A/µs - supports ZVS/ZCS transitions and reliable commutation in bridge-leg topologies
T_j max	150 °C - allows full-rated operation in thermally constrained server and telecom enclosures

Pinout & Package

IPA65R045C7XKSA1 is housed in a TO-220 FullPAK (PG-TO220-3-1) package with isolated drain tab, optimized for surface-mount assembly and thermal performance. The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives gate drive signal; requires <3.3 Ω series resistance to damp ringing due to low Q_gd/Q_gs ratio
Pin 2 (Drain)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced
Pin 3 (Source)	Power return / reference	Serves as local ground reference for gate driver; carries full load current and diode recovery current

Key Features

Feature	Design Value
Superjunction cell architecture	Enables 45 mΩ R_DS(on) at 650 V while maintaining <12 µJ E_oss for high-frequency efficiency
Enhanced dv/dt immunity	100 V/ns rating eliminates need for external Miller clamps in 100–300 kHz PFC designs
Optimized body diode	60 A/µs dI/dt and 725 ns t_rr support soft-switched bridge configurations without snubbers
Industrial temperature qualification	Rated for −55 °C to +150 °C operation per JEDEC J-STD-20, supporting uncooled telecom rectifiers

Applications

Server Power Supply PFC

Telecom Rectifier Module

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in 2–3 kW rack-mounted server PSUs.

IC Role / Device Role / Timing Role: Main switching transistor in active clamp or two-phase interleaved boost converter.

Use Value: 45 mΩ R_DS(on) and 11.7 µJ E_oss enable >98.5% efficiency at 230 V AC input and full load.

Use Scenario: High-density 48 V output rectification in -48 V telecom systems with distributed power architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge or LLC resonant converter.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during fast bus transients in noisy base station environments.

UPS Inverter Stage

Solar String Inverter DC-DC Stage

Use Scenario: Half-bridge leg in online double-conversion UPS inverters delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: High-side switch handling 16 A RMS output current at 5–10 kHz PWM frequency.

Use Value: 249 mJ single-pulse avalanche energy ensures robustness against load dump and short-circuit faults.

Use Scenario: Isolated DC-DC stage in string inverters converting 600–1000 V PV input to 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge operating at 75–125 kHz.

Use Value: 60 A/µs body diode dI/dt supports zero-voltage switching across wide input voltage range without added snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW65N60DM6	R_DS(on) = 48 mΩ, Q_g = 105 nC, E_oss = 14.2 µJ @ 400 V	Higher conduction loss and switching energy; requires stronger gate driver	Preferred where cost sensitivity outweighs 0.3 mΩ R_DS(on) and 2.5 µJ E_oss penalty
IXFH60N60X3	R_DS(on) = 50 mΩ, Q_g = 85 nC, E_oss = 10.8 µJ @ 400 V	Lower Q_g but higher R_DS(on); reduced avalanche rating (180 mJ E_AS)	Selected when gate drive strength is limited but avalanche stress is low

Compared with STW65N60DM6 and IXFH60N60X3, IPA65R045C7XKSA1 offers the lowest R_DS(on) × Q_g FOM (4.2 nC·Ω) and highest dv/dt immunity, making it optimal for high-efficiency, high-reliability PFC and hard-switched SMPS where thermal headroom is constrained.

Availability

IPA65R045C7XKSA1 is available at Aetrix Electronics and suitable for server power supply PFC, telecom rectifier modules, and UPS inverter stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA65R045C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C7 series targets high-efficiency, high-power-density AC-DC conversion, specifically engineered for 650 V PFC and primary-side switching in computing, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPA65R045C7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 11 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is thermally limited by junction-to-case thermal resistance (3.6 °C/W) and maximum junction temperature (150 °C), not by package current-carrying capacity alone.

Does IPA65R045C7XKSA1 require a negative gate voltage for reliable turn-off?

No. The device is fully specified for gate drive between −20 V and +20 V (static) and −30 V to +30 V (dynamic). A −5 V to −10 V negative bias improves noise immunity in high-dv/dt environments but is not required for functional turn-off; 0 V gate-source voltage fully blocks conduction.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 60 A/µs dI/dt and 725 ns reverse recovery time at 400 V, significantly faster than legacy planar MOSFETs (typically >1 µs t_rr). This enables use in hard-commutated bridges without external SiC Schottky catch diodes in many 50–150 kHz designs.

Can IPA65R045C7XKSA1 be paralleled with identical units without gate resistors?

No. The datasheet explicitly recommends ferrite beads on each gate or separate totem-pole drivers to ensure balanced dynamic current sharing. Without such measures, mismatched threshold voltage and gate charge cause current imbalance during switching transitions, risking thermal runaway.

IPA65R045C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 24.9A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1.25mA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4340 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R045C7XKSA1 FAQ

1.How can I place an order for IPA65R045C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R045C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R045C7XKSA1 reliable?

The price and inventory of IPA65R045C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R045C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R045C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R045C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R045C7XKSA1?

IPA65R045C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R045C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R045C7XKSA1?

For technical support, including IPA65R045C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R045C7XKSA1 requirements.

6.How does Aetrix verify that IPA65R045C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R045C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R045C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R045C7XKSA1?

All IPA65R045C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R045C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R045C7XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R045C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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