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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R099C6XKSA1

Name: IPA65R099C6XKSA1
Brand: Infineon Technologies
SKU: IPA65R099C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R099C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R099C6XKSA1.pdf

Description:: MOSFET N-CH 650V 38A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:3,585

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Product details

Overview

IPA65R099C6XKSA1 from Infineon Technologies is a 650 V, 38 A (T_C = 25°C), 0.099 Ω R_DS(on) superjunction MOSFET in TO-220 FullPAK package, optimized for high-efficiency PFC and hard-switching SMPS in industrial power supplies and telecom rectifiers.

For engineers reviewing the IPA65R099C6XKSA1 datasheet, IPA65R099C6XKSA1 pinout, IPA65R099C6XKSA1 application, or IPA65R099C6XKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit (12.6 nC·Ω), E_oss at 400 V (10 µJ), di/dt ruggedness (300 A/µs), and TO-220 FP thermal resistance (R_thJC = 3.6 °C/W).

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure enabling simultaneous low conduction loss (R_DS(on) = 0.099 Ω) and fast switching (t_fall = 6 ns, Q_g = 127 nC). Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) ensures robust noise immunity in high-noise industrial environments.

The integrated body diode delivers 300 A/µs commutation capability and t_rr = 615 ns at 100 A/µs di/dt, supporting ZVS and resonant topologies without external snubbers. The TO-220 FullPAK package places the drain on the tab for low-inductance high-current paths.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with 1.6× safety margin for surge and ringing
R_DS(on),max	0.099 Ω @ T_J = 25°C - enables <1.5 W conduction loss at 38 A continuous current
Q_g,typ	127 nC - determines gate drive power and influences switching frequency ceiling in hard-SW converters
E_oss @ 400 V	10 µJ - directly reduces turn-on switching loss in PWM stages operating at 400 V bus
I_D,pulse	115 A - supports peak-load handling in server PSU hold-up and overload protection
di/dt ruggedness	300 A/µs - sustains fast current transients during LLC resonant transitions without oscillation
R_thJC	3.6 °C/W - enables 35 W power dissipation at T_C = 25°C in TO-220 FP mounting

Pinout & Package

IPA65R099C6XKSA1 uses the TO-220 FullPAK (PG-TO220FP) package: metal tab is drain (D), pin 1 is gate (G), pin 3 is source (S). The drain-connected tab provides low-inductance, high-current path ideal for primary-side switching nodes.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate (G)	Low-impedance control input; R_G = 1.7 Ω enables stable 13 V gate drive without overshoot
Tab (mounting surface)	Drain (D)	High-current power terminal; electrically connected to PCB copper pour for thermal and EMI performance
Pin 3 (right)	Source (S)	Reference node for gate drive; connects to power ground plane with minimal loop inductance

Key Features

Feature	Design Value
Superjunction R_DS(on) × Q_g FOM	12.6 nC·Ω - reduces total switching + conduction loss by >25% vs. prior-gen 650 V MOSFETs
Body diode commutation ruggedness	300 A/µs di/dt - eliminates need for external diode in critical PFC boost and LLC half-bridge legs
Gate drive simplicity	V_GS(th) = 2.5–3.5 V - compatible with standard 12 V gate drivers; no negative bias required
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - rated for -55°C to +150°C operation in harsh environments
Halogen-free & Pb-free	RoHS-compliant plating and mold compound - meets IPC-1752A material declaration requirements

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.5 kW front-end AC/DC converter with active PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: High-voltage switching transistor in boost PFC and LLC half-bridge, operating at 100–300 kHz.

Use Value: 0.099 Ω R_DS(on) and 10 µJ E_oss reduce total losses by 4.2 W per device vs. C3-series equivalents, improving 230 V efficiency by 0.8%.

Use Scenario: Input-stage switch in 48 V telecom rectifier with dual-phase interleaved PFC and phase-shifted full-bridge.

IC Role / Device Role / Timing Role: 650 V primary switch handling 30 A RMS current with 150 kHz switching frequency.

Use Value: 300 A/µs di/dt ruggedness prevents shoot-through during zero-voltage switching transitions, eliminating 2× external RC snubbers per phase.

LCD TV Power Board

Solar Microinverter

Use Scenario: PFC boost switch in compact 200 W open-frame power supply for 55″ LCD TV backlight driver.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) boost converter at 65 kHz.

Use Value: TO-220 FP package allows direct heatsink mounting on small PCB area (<12 cm²), reducing thermal pad footprint by 35% vs. TO-247.

Use Scenario: DC-link switch in 300 W single-phase microinverter interfacing PV panel to grid via H-bridge.

IC Role / Device Role / Timing Role: High-reliability 650 V switch handling 12 A RMS current under partial shading and rapid irradiance changes.

Use Value: 150°C max junction temperature rating and JEDEC industrial qualification ensure >15-year field life in outdoor rooftop installations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099C6	TO-247 package; R_thJC = 0.45 °C/W; P_tot = 278 W @ T_C = 25°C	Higher power density needed; requires larger heatsink but supports >2× current in same thermal envelope	Select when system thermal budget allows TO-247 mounting and >100 W output is required
IPP65R099C6	TO-220 (non-FullPAK); drain on pin 2; R_thJC = 0.45 °C/W; higher lead inductance	Legacy board layout compatibility; lower cost but reduced EMI performance in high-dv/dt circuits	Select only for cost-sensitive industrial SMPS where layout cannot accommodate FullPAK drain-tab routing

Compared with IPW65R099C6 and IPP65R099C6, IPA65R099C6XKSA1 trades off absolute power handling for superior thermal interface (drain-tab mounting) and lower EMI (reduced source inductance), making it optimal for space-constrained, high-frequency PFC designs.

Availability

IPA65R099C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for IPA65R099C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with over 30 years of high-voltage MOSFET innovation.

The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-power-density AC/DC conversion in industrial and telecom infrastructure, emphasizing low R_DS(on) × Q_g and robust body diode performance.

FAQ

What is the maximum continuous drain current for IPA65R099C6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 24.0 A at T_C = 100°C, derated from 38.0 A at 25°C due to thermal limitations of the TO-220 FullPAK package. This value is defined by junction temperature limits and R_thJC = 3.6 °C/W, not package current-carrying capacity alone.

Does IPA65R099C6XKSA1 require a negative gate voltage for reliable turn-off?

No. IPA65R099C6XKSA1 has a gate threshold voltage range of 2.5–3.5 V and is fully compatible with standard 0 V to 12 V gate drive. Negative bias is unnecessary due to its high noise immunity and low gate leakage (I_GS ≤ 100 nA at 20 V).

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 300 A/µs commutation di/dt and 615 ns reverse recovery time at 100 A/µs di/dt-significantly faster than planar MOSFETs. This enables use in ZVS topologies without external diodes, unlike conventional 650 V devices with t_rr > 1.2 µs.

Can IPA65R099C6XKSA1 be used in place of IPP65R099C6 on an existing PCB?

No-pinout and thermal interface differ fundamentally: IPA65R099C6XKSA1 uses TO-220 FullPAK (drain on tab, gate on pin 1, source on pin 3), while IPP65R099C6 uses standard TO-220 (drain on pin 2). Mechanical and electrical rework is required for replacement.

IPA65R099C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 12.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 127 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2780 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-111

IPA65R099C6XKSA1 FAQ

1.How can I place an order for IPA65R099C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R099C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R099C6XKSA1 reliable?

The price and inventory of IPA65R099C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R099C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R099C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R099C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R099C6XKSA1?

IPA65R099C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R099C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R099C6XKSA1?

For technical support, including IPA65R099C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R099C6XKSA1 requirements.

6.How does Aetrix verify that IPA65R099C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R099C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R099C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R099C6XKSA1?

All IPA65R099C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R099C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R099C6XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R099C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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