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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R150CFDXKSA1

Name: IPA65R150CFDXKSA1
Brand: Infineon Technologies
SKU: IPA65R150CFDXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R150CFDXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R150CFDXKSA1.pdf

Description:: MOSFET N-CH 650V 22.4A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA65R150CFDXKSA1 from Infineon Technologies is a 650 V, 22.4 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, optimized for resonant and soft-switching topologies. It features R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and an ultra-fast, robust body diode with t_rr = 140 ns and di/dt capability of 900 A/µs - enabling high-efficiency server PSU and telecom AC-DC stages.

For engineers reviewing the IPA65R150CFDXKSA1 datasheet, IPA65R150CFDXKSA1 pinout, IPA65R150CFDXKSA1 application, or IPA65R150CFDXKSA1 equivalent, key selection criteria include its low E_oss (6.8 µJ @ 400 V), high commutation ruggedness, TO-220 FullPAK package thermal performance (R_thJC = 3.6 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ superjunction architecture with charge compensation, delivering simultaneous reduction in conduction loss (via 0.15 Ω R_DS(on)) and switching loss (via low Q_g and E_oss). Its body diode is engineered for hard commutation, achieving 900 A/µs di/dt rating and 614 mJ single-pulse avalanche energy.

The TO-220 FullPAK (TO-220 FP) package integrates source-tab isolation and optimized thermal path to the heatsink via the drain tab, supporting 34.7 W continuous power dissipation at T_C = 25°C. Gate threshold voltage is tightly controlled at 3.5–4.5 V, ensuring stable turn-on behavior across temperature and drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC-link SMPS applications
R_DS(on), max	0.15 Ω - enables <2.2 W conduction loss at 12 A RMS, critical for high-density PSU thermal design
Q_g, typ	86 nC - determines gate drive power requirement and influences switching speed control in ZVS circuits
E_oss @ 400 V	6.8 µJ - directly reduces turn-off loss in resonant LLC and phase-shifted full-bridge converters
t_rr	140 ns - supports reliable zero-voltage switching without excessive voltage overshoot during diode recovery
I_F, cont	22.4 A - defines maximum continuous current handling in synchronous rectifier or half-bridge leg configurations
R_thJC	3.6 °C/W - quantifies junction-to-case thermal resistance in TO-220 FP, enabling accurate heatsink sizing

Pinout & Package

IPA65R150CFDXKSA1 is housed in a TO-220 FullPAK (TO-220 FP) package with isolated source tab and drain-connected metal tab for direct heatsinking. The package provides enhanced creepage/clearance and simplified mounting vs. standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input terminal	Receives PWM signal; requires ≤10 V drive for full enhancement; gate resistance R_G = 1.5 Ω (1 MHz)
Pin 2 (Drain)	High-side power output node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential
Pin 3 (Source)	Power return / reference node	Isolated source tab allows floating-source configuration; used as local ground reference for gate driver

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC, I_RRM = 8.8 A - enables reliable hard-commutation in PFC and LLC resonant converters
High commutation ruggedness	di/dt = 900 A/µs, E_AS = 614 mJ - withstands abrupt current reversal without failure in asymmetric half-bridge operation
Low figure-of-merit	R_DS(on) × Q_g = 12.9 Ω·nC - balances conduction and switching losses for optimal efficiency at 100–300 kHz
Industrial qualification	JEDEC J-STD-020 & JESD22 compliant - ensures reliability under thermal cycling, humidity, and mechanical stress in 10+ year deployments
Pb-free & halogen-free	RoHS-compliant plating and mold compound - meets environmental compliance requirements for global industrial and telecom equipment

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant DC-DC converter for 48 V intermediate bus.

IC Role / Device Role / Timing Role: High-side switching element operating at 200–300 kHz with zero-voltage turn-on enabled by body diode soft recovery.

Use Value: 6.8 µJ E_oss and 140 ns t_rr reduce switching loss by ~18% vs. prior-gen SJ-MOSFETs, lowering heatsink mass by 35%.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier system.

IC Role / Device Role / Timing Role: Main power switch handling 20 A RMS current with repetitive hard commutation events per cycle.

Use Value: 900 A/µs di/dt rating and 614 mJ E_AS prevent failure during transient overloads and line surges.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Half-bridge switch driving resonant tank for CCFL or LED backlight in 42–65 inch LCD panels.

IC Role / Device Role / Timing Role: Fast-switching power transistor requiring low Q_g for precise timing control and minimal dead-time loss.

Use Value: 86 nC Q_g enables clean 500 kHz switching with standard 2 A gate drivers, reducing BOM cost vs. high-current alternatives.

Use Scenario: DC-AC H-bridge switch in 300–600 W solar microinverter with transformerless topology.

IC Role / Device Role / Timing Role: Isolation-free power switch managing bidirectional current flow and reverse recovery stress.

Use Value: Robust body diode eliminates need for external anti-parallel SiC Schottky, simplifying layout and improving reliability under partial shading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R150CFD	TO-247 package, R_thJC = 0.64 °C/W, P_tot = 195.3 W - higher thermal capacity but larger footprint	Better suited for high-power (>5 kW) industrial PSUs where heatsink space is available	Select when thermal budget exceeds 34.7 W or board layout permits TO-247 mounting
IPP65R150CFD	TO-220 package (non-FullPAK), R_thJC = 0.64 °C/W, no isolated source tab - lower thermal resistance but requires source isolation	Preferred for cost-sensitive consumer power adapters where PCB-level isolation suffices	Choose when source-referenced gate drive is feasible and thermal margin allows higher R_thJA

Compared with IPW65R150CFD and IPP65R150CFD, IPA65R150CFDXKSA1 trades off absolute thermal performance for compact, isolated-source integration - making it optimal for space-constrained, high-reliability telecom and server modules where source-ground separation is mandatory.

Availability

IPA65R150CFDXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for IPA65R150CFDXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with leadership in silicon carbide and superjunction MOSFET technologies.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in resonant and soft-switching SMPS designs - specifically targeting high-frequency, high-power-density applications in datacenter, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current for IPA65R150CFDXKSA1 at 100°C case temperature?

The maximum continuous drain current is 14.2 A at T_C = 100°C, derated from 22.4 A at 25°C due to thermal limitations of the TO-220 FullPAK package. This value is defined by junction temperature limits and R_thJC = 3.6 °C/W, not package copper area alone.

Does IPA65R150CFDXKSA1 require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive and does not require negative turn-off bias. Its gate threshold voltage range (3.5–4.5 V) and low gate leakage (<100 nA) ensure stable off-state behavior with standard CMOS or gate-driver IC outputs.

How does the body diode performance compare to standard silicon MOSFETs?

IPA65R150CFDXKSA1's body diode achieves t_rr = 140 ns and Q_rr = 0.7 µC - up to 3× faster recovery and 50% lower Q_rr than conventional 650 V planar MOSFETs - enabling efficient hard-commutation without snubbers in PFC and LLC stages.

Can IPA65R150CFDXKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) above 25°C and matched dynamic parameters across production lots enable stable current sharing. Parallel operation requires matched gate drive impedance and symmetrical PCB layout to minimize loop inductance imbalance.

IPA65R150CFDXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34.7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-111

IPA65R150CFDXKSA1 FAQ

1.How can I place an order for IPA65R150CFDXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R150CFDXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R150CFDXKSA1 reliable?

The price and inventory of IPA65R150CFDXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R150CFDXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R150CFDXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R150CFDXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R150CFDXKSA1?

IPA65R150CFDXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R150CFDXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R150CFDXKSA1?

For technical support, including IPA65R150CFDXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R150CFDXKSA1 requirements.

6.How does Aetrix verify that IPA65R150CFDXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R150CFDXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R150CFDXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R150CFDXKSA1?

All IPA65R150CFDXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R150CFDXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R150CFDXKSA1 part is unused and in its original packaging.

Return procedure for IPA65R150CFDXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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