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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R1K5CEXKSA1

Name: IPA65R1K5CEXKSA1
Brand: Infineon Technologies
SKU: IPA65R1K5CEXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R1K5CEXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R1K5CEXKSA1.pdf

Description:: MOSFET N-CH 650V 5.2A TO220

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Product details

Overview

IPA65R1K5CEXKSA1 from Infineon Technologies is a 650 V, 1.5 Ω R_DS(on) superjunction MOSFET in TO-220 FP package, optimized for cost-sensitive PFC and hard-switching SMPS stages in lighting and adapter applications. It delivers 5.2 A continuous drain current at T_C = 25°C, 10.5 nC total gate charge, and 1.15 µJ output energy at 400 V.

For engineers reviewing the IPA65R1K5CEXKSA1 datasheet, IPA65R1K5CEXKSA1 pinout, IPA65R1K5CEXKSA1 application, or IPA65R1K5CEXKSA1 equivalent, key selection criteria include its 700 V maximum drain-source voltage rating, high commutation ruggedness (500 A/µs di/dt), low E_oss, and gate drive compatibility with standard 13 V logic-level controllers.

Technical Context

This CoolMOS™ CE device implements a superjunction structure enabling high-voltage operation with reduced conduction and switching losses. Its 1.5 Ω R_DS(on) at 10 V gate drive and 25°C, combined with 225 pF input capacitance and 18 pF output capacitance at 100 V, supports efficient operation in discontinuous and continuous conduction mode PFC converters.

The MOSFET features a 5.4 V gate plateau voltage and 1.3 nC gate-to-source charge, ensuring predictable turn-on behavior under typical 10–13 V gate drive conditions. Its 26 mJ single-pulse avalanche energy and 15 V/ns reverse diode dv/dt rating support robust operation in resonant topologies with fast voltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	700 V - Withstands peak line voltages up to 480 V AC mains with margin in universal-input PFC designs
R_DS(on) max	1.50 Ω @ 10 V, 25°C - Enables low conduction loss in 5–6 A continuous current PFC boost stages
Q_g typ	10.5 nC - Compatible with standard PWM controllers without requiring high-current gate drivers
E_oss @ 400 V	1.15 µJ - Reduces switching loss in hard-switched flyback and LLC primary-side switches
I_D cont	5.2 A @ T_C = 25°C - Supports 30–40 W adapter and LED driver output power levels with adequate thermal margin
di/dt ruggedness	500 A/µs - Sustains fast current transitions in ZVS/ZCS resonant converters without oscillation
T_j max	150°C - Allows operation in enclosed lighting fixtures with limited airflow and passive cooling

Pinout & Package

TO-220 FullPAK (PG-TO220FP) package with isolated tab; drain connected to pin 2 and metal tab, gate on pin 1, source on pin 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤10.2 Ω series resistance for stable switching and EMI control
Pin 2 + Tab	Drain	High-voltage power node; electrically connected to heatsink; requires 2500 V_rms isolation per IEC 60950
Pin 3	Source	Power return path and gate reference; must be routed with low-inductance layout to minimize ringing

Key Features

Feature	Design Value
Low FOM (R_DS(on) × Q_g)	15.75 Ω·nC - Delivers superior efficiency trade-off vs. conventional SJ-MOSFETs in 65–100 kHz PFC stages
High commutation ruggedness	500 A/µs di/dt and 50 V/ns dv/dt - Enables reliable operation in boundary-conduction-mode (BCM) and critical-conduction-mode (CrCM) PFC without snubbers
Easy gate drive	5.4 V gate plateau and 6.5 Ω intrinsic gate resistance - Reduces need for external gate resistors and simplifies driver stage design
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-020 moisture sensitivity level 1 and industrial environmental compliance requirements

Applications

LED Driver Power Stage

PC Silverbox PFC Boost

Use Scenario: Constant-current LED driver for indoor downlights operating from 85–265 V AC input.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost converter.

Use Value: 1.5 Ω R_DS(on) and 1.15 µJ E_oss enable >92% efficiency at 30 W with minimal heatsink requirement.

Use Scenario: Active PFC front-end in desktop PC power supplies meeting 80 PLUS Bronze efficiency standards.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC stage operating at 65 kHz.

Use Value: 500 A/µs di/dt ruggedness ensures stable operation during load transients without recovery-induced shoot-through.

LCD TV Backlight Inverter

Universal Input Adapter

Use Scenario: Resonant half-bridge inverter powering CCFL or LED backlight modules in 32–42 inch LCD TVs.

IC Role / Device Role / Timing Role: Low-side switch in LLC resonant converter with ZVS operation.

Use Value: 18 pF C_oss and 10 pF Co(er) reduce dead-time losses and improve light-load efficiency.

Use Scenario: Compact 24 W wall adapter for consumer electronics with universal AC input (90–264 V AC).

IC Role / Device Role / Timing Role: Primary switch in quasi-resonant flyback controller.

Use Value: 7.7 ns turn-on delay and 18.2 ns fall time support precise QR timing control and <100 mW no-load consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 0.6 Ω (lower), Q_g = 45 nC (higher), TO-220 package	Better conduction loss but higher gate drive loss; less suitable for high-frequency adapters	Prefer when thermal budget allows larger heatsink and switching frequency is ≤50 kHz
IPP65R1K5C7	Same R_DS(on) (1.5 Ω), lower Q_g (8.5 nC), newer CoolMOS™ C7 generation	Improved E_oss (0.85 µJ) and faster switching; pin-compatible but higher cost	Choose for new designs targeting >94% efficiency in 100 kHz+ PFC stages

Compared with STP65N6F6 and IPP65R1K5C7, IPA65R1K5CEXKSA1 offers the best balance of low gate charge, proven ruggedness, and cost-making it ideal for high-volume lighting and adapter platforms where BOM cost and supply stability are critical.

Availability

IPA65R1K5CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC Silverbox PFC boost circuits, and universal input adapters requiring stable component supply and long-term industrial availability.

Supply support for IPA65R1K5CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE product line, engineered specifically for cost-sensitive, high-efficiency offline power conversion in consumer lighting and adapter applications while maintaining robustness and ease of use.

FAQ

What is the maximum recommended gate resistor value for stable switching?

The datasheet specifies a 10.2 Ω gate resistor for characterization at 400 V V_DD. For stable operation across temperature and process variation, a 10–22 Ω non-inductive resistor is recommended to limit peak gate current to <2 A while suppressing oscillation. Lower values may cause overshoot; higher values increase switching loss and delay.

Can IPA65R1K5CEXKSA1 be used in parallel configurations?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each MOSFET's gate line or separate totem-pole drivers to ensure current sharing. The device's positive temperature coefficient of R_DS(on) supports thermal balancing, but mismatched layout inductance can cause dynamic current imbalance above 2 A per device.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the SOA curve (Diagram 3) limits continuous operation to ≤2.2 A at 400 V V_DS. For pulsed operation (100 µs), it supports up to 4.5 A at 400 V. Exceeding these boundaries risks thermal runaway due to reduced R_DS(on) temperature coefficient margin above 125°C junction.

Does this MOSFET include an integrated body diode suitable for synchronous rectification?

No. While it contains a fast-recovery body diode (t_rr = 200 ns, Q_rr = 0.9 µC), its forward voltage (0.9 V @ 1.5 A) and recovery characteristics are not optimized for synchronous rectification. Dedicated SR controllers and low-V_F MOSFETs are required for that function.

IPA65R1K5CEXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 130µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 225 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 30W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA65R1K5CEXKSA1 FAQ

1.How can I place an order for IPA65R1K5CEXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R1K5CEXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R1K5CEXKSA1 reliable?

The price and inventory of IPA65R1K5CEXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R1K5CEXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R1K5CEXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R1K5CEXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R1K5CEXKSA1?

IPA65R1K5CEXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R1K5CEXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R1K5CEXKSA1?

For technical support, including IPA65R1K5CEXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R1K5CEXKSA1 requirements.

6.How does Aetrix verify that IPA65R1K5CEXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R1K5CEXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R1K5CEXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R1K5CEXKSA1?

All IPA65R1K5CEXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R1K5CEXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R1K5CEXKSA1 part is unused and in its original packaging.

Return procedure for IPA65R1K5CEXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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