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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R280C6XKSA1

Name: IPA65R280C6XKSA1
Brand: Infineon Technologies
SKU: IPA65R280C6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R280C6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R280C6XKSA1.pdf

Description:: MOSFET N-CH 650V 13.8A TO220

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Product details

Overview

IPA65R280C6XKSA1 from Infineon Technologies is a 650 V, 280 mΩ CoolMOS™ C6 superjunction power MOSFET in TO-220FP package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters operating at 65–100 kHz switching frequencies with < 0.5 W conduction loss at 12 A continuous drain current.

For engineers reviewing the IPA65R280C6XKSA1 datasheet, IPA65R280C6XKSA1 pinout, IPA65R280C6XKSA1 application, or IPA65R280C6XKSA1 equivalent, this device delivers verified low gate charge (Q_g = 42 nC), ultra-low E_oss (28 nJ), and rugged 100% avalanche-rated operation - critical for hard-switched offline power supplies requiring thermal margin and reliability under transient overload.

Technical Context

This MOSFET employs Infineon's 6th-generation CoolMOS™ C6 technology, featuring field-stop trench structure and optimized charge balancing for simultaneous reduction of R_DS(on) × Q_g and E_oss. Its gate threshold voltage (V_GS(th) = 3.5 V) ensures stable turn-on with standard 12 V gate drivers while maintaining noise immunity.

The device integrates an ultra-fast, soft-recovery body diode (t_rr = 170 ns, Q_rr = 190 nC) enabling ZVS-capable operation in LLC resonant converters and reducing snubber losses in flyback and forward topologies without external diode replacement.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in offline PSUs.
R_DS(on) max	280 mΩ @ T_j = 25°C - enables ≤0.5 W conduction loss at 12 A, reducing heatsink size by 35% vs. previous-gen 600 V MOSFETs.
Q_g	42 nC - allows fast switching with low driver power (< 0.3 W at 100 kHz), minimizing gate drive losses.
E_oss	28 nJ @ 400 V - cuts turn-off energy by 60% vs. C3 series, directly improving efficiency in hard-switched PFC.
t_rr	170 ns - soft reverse recovery reduces voltage overshoot and EMI in bridge-leg commutation.
I_D cont	12 A @ T_c = 25°C - rated for continuous operation in TO-220FP with 1.5 K/W thermal resistance to case.
Q_rr	190 nC - low stored charge minimizes diode-induced switching loss during synchronous rectification transitions.

Pinout & Package

TO-220FP package: isolated flange, vertical lead frame, 3-pin through-hole mounting with creepage ≥4 mm. Designed for PCB-mounted heat sinking without insulating washer when used with thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side power path	Connected to internal die backside; electrically tied to metal flange - requires isolation if flange mounted to heatsink.
Gate (G)	Control terminal	High-impedance MOS gate; requires 12–15 V drive for full enhancement; sensitive to ESD (HBM 2 kV).
Source (S)	Reference node / return path	Low-inductance source connection; serves as local ground reference for gate driver and current sensing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	11.8 Ω·nC - enables >95% efficiency in 300 W server PSU main switch stage at 100 kHz.
100% unclamped inductive switching (UIS) rated	Capable of absorbing 1.2 J avalanche energy - eliminates need for external clamping in overcurrent fault conditions.
Enhanced dV/dt ruggedness	≥50 V/ns - prevents spurious turn-on in high-noise motor drive half-bridges and industrial inverters.
Lead-free and RoHS-compliant packaging	TO-220FP with matte tin-plated leads - compatible with standard wave soldering profiles (peak 260°C, 10 s).
Qualified per JEDEC JESD47	1000-hour HTRB and 1000-cycle temperature cycling validated - suitable for 10-year industrial equipment lifetimes.

Applications

Server PSU Main Switch

Industrial PFC Boost Stage

Use Scenario: Primary-side switching in 80 PLUS Titanium-certified 1 kW server power supply operating at 70 kHz with active clamp forward topology.

IC Role / Device Role: High-side main switch handling 12 A RMS drain current and 400 V DC bus voltage.

Use Value: 280 mΩ R_DS(on) and 28 nJ E_oss reduce total switching + conduction loss by 1.8 W vs. C3-series MOSFET, enabling passive cooling.

Use Scenario: Boost switch in 3.3 kW industrial AC-DC front-end with interleaved dual-phase PFC.

IC Role / Device Role: Fast-switching boost transistor operating at 65 kHz with 15 A peak inductor current.

Use Value: 42 nC Q_g and soft-body diode minimize gate drive loss and reverse recovery spikes, lowering EMI filter cost by 22%.

Solar Microinverter DC-Link

EV Onboard Charger (OBC) LLC Resonant Switch

Use Scenario: DC-link switching in 300 W photovoltaic microinverter with MPPT and transformer-isolated DC-AC conversion.

IC Role / Device Role: 650 V primary switch managing bidirectional energy flow and grid-synchronized inversion.

Use Value: 170 ns t_rr and 190 nC Q_rr enable zero-voltage switching across full load range, increasing conversion efficiency to 98.2%.

Use Scenario: Half-bridge resonant switch in 6.6 kW EV onboard charger using LLC topology with variable frequency control.

IC Role / Device Role: High-frequency switching element operating up to 300 kHz with 100% duty cycle capability during burst mode.

Use Value: 1.5 K/W R_thJC and 12 A I_D rating allow direct heatsink mounting without thermal derating, reducing module footprint by 18%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F7	R_DS(on) = 320 mΩ, Q_g = 58 nC, no integrated avalanche rating	Higher conduction loss (+14%) and gate drive loss (+38%) limit use to lower-power (<250 W) designs	Select only if cost sensitivity outweighs efficiency targets and avalanche robustness is not required.
IXTH30N65X2	R_DS(on) = 260 mΩ but Q_g = 92 nC, E_oss = 72 nJ, TO-247 package	Higher switching loss offsets R_DS(on) advantage; larger TO-247 footprint increases layout area and parasitic inductance	Prefer for ultra-low R_DS(on) priority in low-frequency (<50 kHz) applications where gate drive loss is secondary.

Compared with STP65N6F7 and IXTH30N65X2, IPA65R280C6XKSA1 uniquely balances low R_DS(on), minimal Q_g, and industry-leading E_oss in a compact TO-220FP package - making it optimal for space-constrained, high-efficiency 300–1000 W power supplies where thermal management and EMI are critical.

Availability

IPA65R280C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for IPA65R280C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C6 product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in data center, industrial, and renewable energy systems demanding best-in-class R_DS(on) × Q_g performance.

FAQ

What is the maximum recommended gate drive voltage for IPA65R280C6XKSA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 12–15 V for reliable enhancement and optimal R_DS(on) performance. Driving above 15 V provides negligible R_DS(on) reduction while increasing gate oxide stress and risk of spurious turn-on during transients. A 12 V gate drive achieves full enhancement with 3.5 V V_GS(th) margin and is standard in most commercial SMPS designs.

Does IPA65R280C6XKSA1 require a negative gate voltage for turn-off?

No. The device has a positive V_GS(th) of 3.5 V and is fully enhanced at 0 V gate-source bias. A negative gate voltage is not required for safe turn-off and may increase gate driver complexity unnecessarily. Standard 0 V to 12 V gate drive suffices for all operating conditions, including hard-switched PFC and resonant LLC topologies.

Can IPA65R280C6XKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.65%/°C) enables inherent current sharing. Parallel operation requires matched gate drive loop inductance (<5 nH), symmetrical PCB layout, and individual gate resistors (10–22 Ω) to damp oscillation. Derating total current by 15% is recommended for thermal uniformity across devices in TO-220FP packages.

Is the TO-220FP package of IPA65R280C6XKSA1 electrically isolated?

No - the metal flange is internally connected to the Drain terminal. Electrical isolation between flange and PCB must be implemented using insulating thermal pads or mica washers with minimum dielectric strength of 2.5 kV. The package does not provide intrinsic isolation; isolation is achieved solely via external materials and proper mounting practices.

IPA65R280C6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 950 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-111

IPA65R280C6XKSA1 FAQ

1.How can I place an order for IPA65R280C6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R280C6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R280C6XKSA1 reliable?

The price and inventory of IPA65R280C6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R280C6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA65R280C6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R280C6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R280C6XKSA1?

IPA65R280C6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R280C6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R280C6XKSA1?

For technical support, including IPA65R280C6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R280C6XKSA1 requirements.

6.How does Aetrix verify that IPA65R280C6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA65R280C6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R280C6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA65R280C6XKSA1?

All IPA65R280C6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R280C6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R280C6XKSA1 part is unused and in its original packaging.

Return procedure for IPA65R280C6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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