Infineon Technologies IPA65R650CEXKSA1

Overview

IPA65R650CEXKSA1 from Infineon Technologies is a 650 V, 10.1 A superjunction N-channel MOSFET in TO-220FP FullPAK package, featuring 650 mΩ max R_DS(on), 23 nC typical gate charge, and 2 µJ E_oss at 400 V. It serves as a high-efficiency primary-side switch in hard-switched and resonant SMPS topologies for consumer and lighting applications.

For engineers reviewing the IPA65R650CEXKSA1 datasheet, IPA65R650CEXKSA1 pinout, IPA65R650CEXKSA1 application, or IPA65R650CEXKSA1 equivalent, key selection criteria include its 4.5 °C/W R_thJC, 50 V/ns dv/dt ruggedness, 142 mJ single-pulse avalanche energy, and suitability for PFC and LLC stages in compact AC/DC adapters and indoor LED drivers.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-efficiency 65–75 W SMPS designs. Its low FOM (R_DS(on) × Q_g) enables reduced conduction and switching losses while maintaining robust commutation behavior under hard-switching conditions.

The MOSFET integrates an ultra-fast body diode with 270 ns reverse recovery time and 13 A peak reverse recovery current, supporting ZVS-capable topologies. Gate plateau voltage is fixed at 5.5 V, enabling stable drive with standard 12 V gate drivers without overdrive risk.

Key Specifications

Pinout & Package

IPA65R650CEXKSA1 uses the TO-220FP FullPAK package with insulated case (2500 V_rms isolation), where the metal tab is electrically connected to the Drain terminal. Pin 1 is Gate, Pin 2 is Drain (tab), and Pin 3 is Source - enabling direct mounting to heatsinks without additional insulation hardware.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Compared with IPD65R650CE and IPA65R600CE, IPA65R650CEXKSA1 offers optimal balance of thermal isolation (2500 V_rms), mechanical robustness (TO-220FP), and gate drive simplicity-making it preferred for cost-sensitive, insulated, and field-serviceable AC/DC power supplies.

Availability

IPA65R650CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC Silverbox PFC modules, and LCD TV SMPS requiring stable component supply across multi-year production cycles.

Supply support for IPA65R650CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ CE product line, engineered for cost-optimized, high-efficiency 65–700 W offline SMPS in consumer and lighting markets-emphasizing ease of use, ruggedness, and RoHS compliance without sacrificing switching performance.

FAQ

What is the maximum continuous drain current for IPA65R650CEXKSA1 at 100°C case temperature?

The maximum continuous drain current is 6.4 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.4 datasheet. This derating reflects thermal limitations of the TO-220FP package, where junction-to-case thermal resistance is 4.5 °C/W and maximum T_j is 150°C.

Does IPA65R650CEXKSA1 require a gate resistor for reliable operation?

Yes-a gate resistor is required to dampen oscillation and control switching speed. The datasheet recommends RG ≈ 6.8 Ω for evaluation (Table 6), and notes that ferrite beads or separate totem-pole drivers are advised for paralleling configurations to prevent gate signal skew and current imbalance.

Is the TO-220FP package of IPA65R650CEXKSA1 electrically insulated?

Yes-the TO-220FP FullPAK variant features reinforced electrical insulation between the drain-connected metal tab and mounting surface, rated for 2500 V_rms for 1 minute. This eliminates the need for insulating pads or washers when mounted directly to grounded heatsinks in Class I AC/DC systems.

Can IPA65R650CEXKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

It can replace C3/C6 equivalents only after validation: IPA65R650CEXKSA1 has higher Q_g than C3 (18 nC) but lower than C6 (28 nC), and its 5.5 V gate plateau differs from C3's 4.5 V. Layout, gate drive strength, and EMI filtering must be rechecked-especially due to its 50 V/ns dv/dt rating and 270 ns t_rr body diode behavior.