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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA65R660CFDXKSA2

Name: IPA65R660CFDXKSA2
Brand: Infineon Technologies
SKU: IPA65R660CFDXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA65R660CFDXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA65R660CFDXKSA2.pdf

Description:: MOSFET N-CH 700V 6A TO220

Quantity:: RFQ Add To RFQ list

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Inventory:5,299

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Product details

Overview

IPA65R660CFDXKSA2 from Infineon Technologies is a 650 V, 6.0 A (continuous), 0.66 Ω R_DS(on) CoolMOS™ CFD2 superjunction MOSFET in TO-220 FullPAK package, featuring ultra-fast body diode (t_rr = 65 ns, Q_rr = 0.2 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (1.8 µJ @ 400 V). It is engineered for resonant-mode PFC and LLC half-bridge primary-side switching in server power supplies.

For engineers reviewing the IPA65R660CFDXKSA2 datasheet, IPA65R660CFDXKSA2 pinout, IPA65R660CFDXKSA2 application, or IPA65R660CFDXKSA2 equivalent, key selection criteria include R_DS(on)-Q_g figure-of-merit, body diode softness, thermal resistance (R_thJC = 4.5 °C/W), and FullPAK mounting compatibility with standard TO-220 footprints.

Technical Context

This device implements Infineon's second-generation CoolMOS™ CFD superjunction architecture, optimized for zero-voltage switching (ZVS) topologies. Its charge characteristics-Q_g = 22 nC, Q_gd = 12 nC, and V_GS,plateau = 6.4 V-enable precise gate drive timing control in high-frequency resonant converters.

The integrated ultra-fast body diode supports hard-commutation-free operation in asymmetric half-bridge and LLC configurations. Its robust dv/dt immunity (50 V/ns) and avalanche energy rating (E_AS = 115 mJ) ensure reliability under transient overvoltage and inductive switching stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in 380–400 V PFC stages with margin for transients.
R_DS(on),max	0.66 Ω @ T_j = 25°C - Enables low conduction loss at 6 A continuous drain current in compact heatsink designs.
Q_g,typ	22 nC - Supports efficient 100–300 kHz switching with moderate gate driver strength (e.g., 1–2 A peak).
E_oss@400V	1.8 µJ - Reduces turn-on switching loss in ZVS circuits; enables >96% efficiency in 1–3 kW LLC converters.
t_rr	65 ns - Limits reverse recovery overshoot and EMI in hard-switched synchronous rectification paths.
R_thJC	4.5 °C/W - Delivers 27.8 W power dissipation at T_C = 25°C; requires minimal thermal interface for FullPAK mounting.
I_D,pulse	17 A - Sustains short-duration overload conditions during startup or fault events without thermal runaway.

Pinout & Package

IPA65R660CFDXKSA2 is housed in a TO-220 FullPAK (PG-TO220FP) package with isolated drain tab, enabling direct PCB mounting without insulating hardware. The package features enhanced thermal performance (R_thJC = 4.5 °C/W) and mechanical robustness for automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low input capacitance (C_iss = 615 pF) minimizes gate drive power.
Pin 2 (Drain)	High-side switch node	Internally connected to exposed metal tab; must be electrically isolated from heatsink unless using conductive thermal pad.
Pin 3 (Source)	Power return / reference	Serves as common return for gate drive and load current; low-inductance layout critical for di/dt stability.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 65 ns, Q_rr = 0.2 µC - Eliminates need for external SiC Schottky catch diodes in LLC resonant tanks.
High commutation ruggedness	di/dt = 900 A/µs - Withstands abrupt current reversal in asymmetrical half-bridge operation without failure.
Low R_DS(on) × Q_g FOM	0.66 Ω × 22 nC = 14.5 Ω·nC - Balances conduction and switching losses for optimal 100–250 kHz operation.
JEDEC industrial qualification	Qualified per JESD47 - Validated for 150°C junction operation and 1000-cycle temperature cycling in server and telecom environments.
Halogen-free & Pb-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-020 moisture sensitivity level (MSL) 1 for reflow soldering.

Applications

Server Power Supply PFC Stage

Telecom Rectifier LLC Primary

Use Scenario: Active clamp PFC boost stage operating at 70–100 kHz with 380 V DC bus in 1U 2 kW redundant PSU.

IC Role / Device Role / Timing Role: High-side switching element in interleaved boost converter; handles full AC line rectified current with ZVS-assisted turn-on.

Use Value: Low E_oss reduces turn-on loss by 35% vs. legacy SJ MOSFETs; FullPAK package simplifies thermal design on dense PCB layouts.

Use Scenario: Primary-side switch in 300–500 kHz LLC resonant converter powering +12 V/100 A telecom rectifier modules.

IC Role / Device Role / Timing Role: Half-bridge leg switch; leverages ultra-fast body diode for self-driven synchronous rectification in secondary side.

Use Value: 65 ns t_rr prevents shoot-through during dead-time transitions; high di/dt rating ensures stable operation under dynamic load steps.

LCD TV Backlight Inverter

Solar Microinverter DC-DC Stage

Use Scenario: Resonant half-bridge driving CCFL or LED backlight strings in 40–65 inch LCD TVs with wide input range (90–264 VAC).

IC Role / Device Role / Timing Role: Primary switch in series-resonant inverter; operates in soft-switching mode across universal AC input.

Use Value: Robust dv/dt immunity (50 V/ns) suppresses false triggering during high dV/dt ringing; low R_DS(on) maintains efficiency at partial load.

Use Scenario: Isolated DC-DC stage in single-phase microinverter converting 30–60 V PV string output to 400 V DC bus.

IC Role / Device Role / Timing Role: High-frequency switch in active-clamp forward or resonant flyback topology; manages bidirectional energy transfer during MPPT cycles.

Use Value: Avalanche-rated (E_AS = 115 mJ) withstands voltage spikes from PV panel transient response; JEDEC industrial qualification ensures 25-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R660CFD	TO-247 package; R_thJC = 2.0 °C/W; higher P_tot = 62.5 W; same electrical specs.	Preferred for higher-power (>3 kW), forced-air-cooled systems requiring maximum thermal headroom.	Select when board space allows larger TO-247 footprint and thermal management includes heatsink/fan.
IPP65R660CFD	TO-220 (non-FullPAK); R_thJC = 2.0 °C/W; drain tab not isolated; identical die and R_DS(on).	Suitable for cost-sensitive industrial SMPS where insulating hardware is acceptable and thermal budget permits.	Choose when existing TO-220 thermal design exists and isolation of drain tab is handled externally.

Compared with IPW65R660CFD and IPP65R660CFD, IPA65R660CFDXKSA2 delivers superior thermal integration in space-constrained server and telecom modules via its isolated FullPAK construction, while maintaining identical silicon-level performance and ruggedness.

Availability

IPA65R660CFDXKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA65R660CFDXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ CFD2 product line targets high-efficiency, high-reliability resonant and soft-switching power conversion in datacenter, telecom, and renewable energy systems, emphasizing body-diode robustness and low-loss operation.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A gate resistor of 6.8 Ω is specified in the datasheet test circuit for turn-on/turn-off timing characterization. For 100–300 kHz operation, values between 4.7 Ω and 15 Ω balance switching speed, EMI, and gate oscillation damping. Higher values increase turn-on delay but reduce ringing; lower values risk overshoot and excessive peak gate current.

Can IPA65R660CFDXKSA2 replace older CoolMOS™ CFD1 devices in existing designs?

Yes-IPA65R660CFDXKSA2 is a direct drop-in replacement for CFD1 variants (e.g., IPA65R660C6) with identical pinout, R_DS(on), and voltage rating. It improves body diode softness (t_rr reduced from 110 ns to 65 ns) and lowers E_oss by ~25%, enabling higher efficiency without layout changes.

Is the drain tab electrically isolated in the TO-220 FullPAK package?

Yes-the drain tab in IPA65R660CFDXKSA2's TO-220 FullPAK (PG-TO220FP) is fully isolated from the PCB mounting surface. This eliminates the need for insulating pads or washers when attaching to grounded heatsinks, simplifying thermal design and improving assembly yield.

What is the safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to 3.8 A per the datasheet's I_D vs. T_C curve. Pulse current remains 17 A for t_p < 10 µs. SOA is limited by both thermal constraints (P_tot = 27.8 W at 25°C, decreasing linearly) and avalanche energy (E_AS = 115 mJ single-pulse limit).

IPA65R660CFDXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 615 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 27.8W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA65R660CFDXKSA2 FAQ

1.How can I place an order for IPA65R660CFDXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA65R660CFDXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA65R660CFDXKSA2 reliable?

The price and inventory of IPA65R660CFDXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA65R660CFDXKSA2 is usually 5 days.

3.What payment methods are accepted for IPA65R660CFDXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA65R660CFDXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA65R660CFDXKSA2?

IPA65R660CFDXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA65R660CFDXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA65R660CFDXKSA2?

For technical support, including IPA65R660CFDXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA65R660CFDXKSA2 requirements.

6.How does Aetrix verify that IPA65R660CFDXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPA65R660CFDXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA65R660CFDXKSA2 meets industry standards.

7.What is the process for return or replacement of IPA65R660CFDXKSA2?

All IPA65R660CFDXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA65R660CFDXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA65R660CFDXKSA2 part is unused and in its original packaging.

Return procedure for IPA65R660CFDXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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