Infineon Technologies IPA70R750P7SXKSA1

Overview

IPA70R750P7SXKSA1 from Infineon Technologies is a 700 V, 0.75 Ω R_DS(on) superjunction MOSFET in PG-TO220 FP package, optimized for flyback converters in cost-sensitive consumer power supplies. It features 8.3 nC total gate charge, 0.9 µJ output switching energy at 400 V, integrated ESD protection (HBM Class 1C), and supports high-frequency operation up to 100 kHz in adapter and LED lighting applications.

For engineers reviewing the IPA70R750P7SXKSA1 datasheet, IPA70R750P7SXKSA1 pinout, IPA70R750P7SXKSA1 application, or IPA70R750P7SXKSA1 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit, E_oss-driven efficiency at 400 V bus, thermal resistance (R_thJC = 5.9 °C/W), body diode recovery (Q_rr = 0.7 µC), and gate threshold voltage (V_GS(th) = 3 V typ).

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure with trench-gate design to achieve low conduction and switching losses simultaneously. Its 700 V blocking rating, 15.4 A pulsed drain current, and 100 V/ns dv/dt ruggedness enable robust operation in discontinuous conduction mode (DCM) flyback topologies with 400 V DC link.

The integrated body diode exhibits 0.9 V forward drop at 1.5 A and 200 ns reverse recovery time, while the 1C HBM ESD rating and 2500 V_rms isolation voltage support reliable assembly and system-level surge immunity in compact, unshielded consumer enclosures.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, lead-free, RoHS-compliant. Drain connected internally to tab for direct thermal coupling to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STP70N70F7 and IPP65R190C7, IPA70R750P7SXKSA1 delivers optimal balance of 700 V rating, sub-1 µJ E_oss, and 8.3 nC Q_g - making it the most efficient choice for cost-sensitive, high-density 65–100 kHz flyback converters requiring full surge immunity.

Availability

IPA70R750P7SXKSA1 is available at Aetrix Electronics and suitable for USB-C chargers, LED lighting drivers, and TV auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPA70R750P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ P7 product line, engineered specifically for high-efficiency, cost-optimized flyback converters in consumer power electronics - emphasizing low R_DS(on) × Q_g, fast switching, and robust manufacturability in high-volume SMT and through-hole assembly.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 4.0 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (5.9 °C/W) and maximum junction temperature limit of 150°C. Operation above this current requires active heatsinking or reduced ambient temperature.

Does IPA70R750P7SXKSA1 require an external gate resistor for stability?

Yes - a gate resistor of 5.3 Ω is used in the datasheet's dynamic characterization test conditions (Table 5). For production designs, a 10–22 Ω non-inductive resistor is recommended to dampen gate oscillation, especially when paralleling devices or driving from low-impedance controllers. Ferrite beads may be added if ringing persists at high dv/dt edges.

Can this MOSFET replace older CoolMOS™ P6 devices in existing designs?

Yes - IPA70R750P7SXKSA1 is a direct drop-in replacement for IPA70R750P6SXKSA1, offering identical pinout, package, and voltage rating, with improved R_DS(on) × Q_g FOM (−12%) and lower E_oss (−18%). No layout or gate drive changes are required, though efficiency gains of 0.3–0.5% are typical in 65–100 kHz flyback designs.

Is the internal body diode suitable for synchronous rectification?

No - the internal body diode is not optimized for synchronous rectification. Its 200 ns t_rr and 0.7 µC Q_rr are appropriate for flyback freewheeling but lack the fast, soft recovery needed for SR control. Dedicated low-V_F, low-Q_rr Schottky or GaN-based synchronous rectifiers are recommended for secondary-side efficiency enhancement.