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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA70R900P7SXKSA1

Name: IPA70R900P7SXKSA1
Brand: Infineon Technologies
SKU: IPA70R900P7SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA70R900P7SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA70R900P7SXKSA1.pdf

Description:: MOSFET N-CH 700V 6A TO220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA70R900P7SXKSA1 from Infineon Technologies is a 700 V, 0.9 Ω R_DS(on) max, Superjunction N-channel CoolMOS™ P7 power MOSFET in PG-TO220 FP package with integrated ESD diode and internal body diode. It delivers 6.8 nC typical gate charge, 0.9 µJ E_oss at 400 V, and supports flyback topologies in AC/DC adapters and LED lighting.

For engineers reviewing the IPA70R900P7SXKSA1 datasheet, IPA70R900P7SXKSA1 pinout, IPA70R900P7SXKSA1 application, or IPA70R900P7SXKSA1 equivalent, key selection criteria include R_DS(on)–Q_g figure-of-merit, ESD Class 1C ruggedness, dv/dt immunity (100 V/ns), thermal resistance (6.1 °C/W), and flyback-specific avalanche rating (3.6 A single-pulse).

Technical Context

This CoolMOS™ P7 device implements superjunction architecture optimized for cost-sensitive, high-efficiency flyback converters operating at 65–130 kHz. Its low R_DS(on) × Q_g (0.9 Ω × 6.8 nC) and R_DS(on) × E_oss (0.9 Ω × 0.9 µJ) enable reduced conduction and switching losses simultaneously.

The MOSFET integrates an ESD protection diode (HBM Class 1C) and exhibits robust dv/dt immunity (100 V/ns) and reverse recovery performance (trr = 160 ns, Qrr = 0.5 µC), enabling stable operation in discontinuous conduction mode (DCM) flyback designs without snubber complexity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	700 V - Withstands full mains-referred DC link voltage (e.g., 400 V bus + 30% margin) in universal-input offline SMPS.
R_DS(on), max	0.9 Ω @ T_j = 25°C - Enables ≤6 A continuous drain current at safe junction temperature in TO-220 FP package.
Q_g, typ	6.8 nC - Reduces gate drive power loss and allows use of low-cost, low-current gate drivers (e.g., 100 mA peak).
E_oss @ 400 V	0.9 µJ - Low output charge energy minimizes turn-off loss and enables higher-frequency operation without efficiency penalty.
V_GS(th), typ	3 V - Ensures reliable turn-on with standard 5 V or 10 V logic-level gate drive; avoids false triggering near noise floor.
ESD Class (HBM)	Class 1C (1 kV) - Integrated on-chip ESD diode eliminates need for external protection in board-level handling and assembly.
T_j max	150 °C - Supports sustained operation in compact, thermally constrained enclosures (e.g., ultra-slim chargers).

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated heatsink mounting, drain-connected tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; low 6.8 nC Q_g enables fast, low-loss switching with minimal driver stress.
Pin 2 (Drain / Tab)	High-voltage power terminal	Electrically connected to metal tab; requires isolation from heatsink unless system ground referenced; carries full DC link voltage.
Pin 3 (Source)	Power return & reference node	Serves as local ground reference for gate drive; connects to primary-side ground plane; carries pulsed primary current (≤12.8 A peak).

Key Features

Feature	Design Value
Superjunction R_DS(on) × Q_g FOM	0.9 Ω × 6.8 nC = 6.12 Ω·nC - Delivers best-in-class conduction-switching trade-off for 700 V MOSFETs in adapter applications.
Integrated ESD protection diode	HBM Class 1C (1 kV) - Eliminates discrete ESD clamp, reducing BOM count and PCB area in consumer-grade power supplies.
Low E_oss (0.9 µJ @ 400 V)	Reduces turn-off energy by >35% vs. prior CoolMOS™ P6 generation - directly enables 100+ kHz operation without efficiency drop.
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on during high dV/dt transients in transformer-coupled flyback circuits, improving reliability.
Thermal resistance R_thJC	6.1 °C/W - Enables 20.5 W power dissipation at T_C = 25°C; supports compact heatsinking in space-constrained adapters.

Applications

USB-C Wall Charger

LED Driver for Smart Lighting

Use Scenario: 30–65 W universal-input USB-C PD charger with DCM flyback topology and 90–130 kHz switching frequency.

IC Role / Device Role: Primary-side high-voltage switch handling 400 V DC link and delivering regulated 9/15/20 V output via optocoupler feedback.

Use Value: 0.9 Ω R_DS(on) and 0.9 µJ E_oss jointly reduce total losses by ~12% vs. legacy SJ-MOSFETs, enabling 94%+ efficiency at full load and <15 mm profile.

Use Scenario: Dimmable constant-current LED driver for residential smart bulbs (8–12 W, TRIAC-dimmable).

IC Role / Device Role: Primary-side switching element in quasi-resonant (QR) flyback, managing inrush, dimming stability, and THD compliance.

Use Value: 3 V V_GS(th) ensures clean turn-on under low-voltage dimmer hold conditions; 100 V/ns dv/dt immunity prevents misfiring during phase-cut transitions.

TV Power Supply (Standby + Main)

AC/DC Adapter for Audio Equipment

Use Scenario: Dual-output (5 V standby + 12 V main) flyback converter in 43–75 inch LCD/LED TV power boards.

IC Role / Device Role: Main power switch in high-efficiency, low-noise primary stage; operates across wide duty cycle range (10–60%).

Use Value: 150 °C T_j,max and 6.1 °C/W R_thJC allow continuous 6 A operation in sealed chassis; integrated ESD diode protects against ESD events during field service.

Use Scenario: Low-noise 12 V/2 A adapter powering DACs, headphone amps, and studio monitors.

IC Role / Device Role: Primary-side switch in low-EMI, shielded flyback design meeting CISPR-32 Class B conducted emissions limits.

Use Value: Low trr (160 ns) and Qrr (0.5 µC) minimize diode reverse recovery noise; soft switching behavior reduces common-mode EMI generation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK70ZFP	R_DS(on) = 0.95 Ω, Q_g = 12.5 nC, no integrated ESD diode, Zener-protected gate	Higher gate drive loss; requires external ESD protection; lower dv/dt rating (50 V/ns)	Prefer IPA70R900P7SXKSA1 where board space, EMI, and production robustness are critical.
IPP60R099P7XKSA1	Same P7 platform, 600 V rating, R_DS(on) = 0.099 Ω, Q_g = 12.5 nC, identical package and pinout	Lower voltage rating limits use to ≤305 V DC link; unsuitable for universal-input 700 V designs	Select IPA70R900P7SXKSA1 for 700 V systems; choose IPP60R099P7XKSA1 only if 600 V suffices and lower R_DS(on) is prioritized.

Compared with STP7NK70ZFP and IPP60R099P7XKSA1, IPA70R900P7SXKSA1 uniquely balances 700 V capability, ultra-low Q_g, integrated ESD protection, and industry-leading R_DS(on)×E_oss, making it optimal for slim, high-efficiency, cost-sensitive flyback converters targeting global mains input.

Availability

IPA70R900P7SXKSA1 is available at Aetrix Electronics and suitable for USB-C wall chargers, LED smart lighting drivers, and TV auxiliary power supplies requiring stable component supply, JEDEC-qualified reliability, and long-term industrial availability.

Supply support for IPA70R900P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with over 30 years of high-voltage MOSFET innovation.

This device belongs to the CoolMOS™ P7 product line-engineered specifically for cost-driven, high-power-density offline SMPS in consumer electronics, emphasizing efficiency, ease of use, and JEDEC-qualified ruggedness.

FAQ

What is the maximum continuous drain current for IPA70R900P7SXKSA1 at 100°C case temperature?

The maximum continuous drain current is 3.5 A at T_C = 100°C, as specified in Table 2 of the datasheet. This limit is set by junction temperature constraints (T_j ≤ 150°C) and thermal resistance (R_thJC = 6.1 °C/W). Derating curves confirm linear reduction from 6.0 A at 20°C to 3.5 A at 100°C.

Does IPA70R900P7SXKSA1 require an external gate resistor for flyback operation?

Yes-a gate resistor (typically 5.3 Ω, per datasheet test conditions) is required to control switching speed, damp ringing, and manage EMI. The device's low Q_g (6.8 nC) allows smaller resistor values than legacy MOSFETs, but omission risks overshoot, shoot-through, and EMI failure in production designs.

Can IPA70R900P7SXKSA1 be used in avalanche mode for energy recovery?

Yes-it is rated for single-pulse avalanche energy of 3.6 A at T_j = 25°C (Table 2), validated per JEDEC standards. However, repetitive avalanche operation is not recommended; the device is optimized for clamped flyback topologies where energy is transferred-not dissipated-in the primary winding.

Is the drain tab electrically isolated in the PG-TO220 FP package?

No-the drain is internally connected to the metal tab (Pin 2), which must be electrically isolated from the heatsink using insulating pads or shoulder washers. The package provides creepage/clearance for 2500 V_rms insulation, but direct tab-to-heatsink contact creates a short unless isolation is implemented.

IPA70R900P7SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 6.8 nC @ 400 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 211 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 20.5W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA70R900P7SXKSA1 FAQ

1.How can I place an order for IPA70R900P7SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA70R900P7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA70R900P7SXKSA1 reliable?

The price and inventory of IPA70R900P7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA70R900P7SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA70R900P7SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA70R900P7SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA70R900P7SXKSA1?

IPA70R900P7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA70R900P7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA70R900P7SXKSA1?

For technical support, including IPA70R900P7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA70R900P7SXKSA1 requirements.

6.How does Aetrix verify that IPA70R900P7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA70R900P7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA70R900P7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA70R900P7SXKSA1?

All IPA70R900P7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA70R900P7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA70R900P7SXKSA1 part is unused and in its original packaging.

Return procedure for IPA70R900P7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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