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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA80R1K0CEXKSA2

Name: IPA80R1K0CEXKSA2
Brand: Infineon Technologies
SKU: IPA80R1K0CEXKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA80R1K0CEXKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA80R1K0CEXKSA2.pdf

Description:: MOSFET N-CH 800V 5.7A TO220-FP

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Product details

Overview

IPA80R1K0CEXKSA2 from Infineon Technologies is an 800 V, 950 mΩ R_DS(on), TO-220 FullPAK CoolMOS™ CE power MOSFET optimized for QR flyback LED lighting retrofit systems. It delivers high dv/dt ruggedness (50 V/ns), low gate charge (31 nC), and robust avalanche energy rating (230 mJ), enabling compact, high-efficiency offline AC/DC converters operating up to 150 °C junction temperature.

For engineers reviewing the IPA80R1K0CEXKSA2 datasheet, IPA80R1K0CEXKSA2 pinout, IPA80R1K0CEXKSA2 application, or IPA80R1K0CEXKSA2 equivalent, key selection criteria include its 800 V blocking voltage, 5.7 A continuous drain current at T_C = 25 °C, body diode dI/dt capability of 400 A/µs, and TO-220 FP package with isolated tab for enhanced thermal and safety performance in Class II lighting designs.

Technical Context

This 800 V superjunction MOSFET employs Infineon's CoolMOS™ CE technology, featuring a charge-compensated drift region that reduces R_DS(on) × Q_g figure-of-merit while maintaining high voltage stability. Its 3.9 °C/W R_thJC and 2500 V_rms isolation rating support direct mounting on heatsinks without insulating pads in non-isolated topologies.

The device integrates a fast-recovery body diode (t_rr = 520 ns, Q_rr = 5 µC) and exhibits extreme dv/dt immunity-critical for QR flyback operation where high-voltage switching transients occur during zero-current turn-on. Gate plateau voltage is fixed at 5.5 V, simplifying gate driver design for stable Miller immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Enables direct connection to universal AC mains (up to 265 V_AC) with ≥2× safety margin in QR flyback primary switches.
R_DS(on), max	950 mΩ @ T_j = 150 °C - Defines conduction loss ceiling in thermally constrained LED drivers; enables <5 W standby power compliance.
Q_g, typ	31 nC - Low gate drive energy requirement reduces gate driver losses and allows use of cost-effective bipolar or small SOT-23 drivers.
E_oss @ 400 V	2.4 µJ - Quantifies output capacitance energy loss per switching cycle; directly impacts efficiency at >65 kHz QR flyback frequencies.
dv/dt ruggedness	50 V/ns - Ensures reliable operation under fast voltage transients without spurious turn-on, eliminating need for external snubbers in most designs.
Body diode dI/dt	400 A/µs - Supports high-frequency commutation in quasi-resonant valley switching, enabling soft turn-on and reduced EMI.
T_j max	150 °C - Allows full-rated operation in enclosed LED retrofit lamps with limited airflow and high ambient temperatures.

Pinout & Package

IPA80R1K0CEXKSA2 is housed in a TO-220 FullPAK (PG-TO220-3-1) package with electrically isolated metal tab (Drain-connected), enabling direct heatsink mounting without insulation hardware. The molded plastic body provides creepage/clearance compliant with IEC 61347-2-13 for LED lamp applications.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives gate drive signal; low input capacitance (C_iss = 785 pF) minimizes driver loading and propagation delay.
Pin 2 (Drain)	Main high-side current path	Connected to internal drain metallization and isolated tab; rated for 2500 V_rms isolation from heatsink.
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides low-inductance return path; used for source degeneration or current-mode control feedback in QR controllers.

Key Features

Feature	Design Value
High-voltage superjunction architecture	Enables 800 V rating with R_DS(on) × Q_g = 29.5 Ω·nC - 30% lower than prior-gen 800 V MOSFETs for same die size.
Low effective output capacitance (C_o(er))	26 pF - Reduces turn-off energy loss and improves light-load efficiency in QR flyback by minimizing capacitive discharge loss.
Robust body diode with controlled Q_rr	Q_rr = 5 µC, t_rr = 520 ns - Minimizes reverse recovery noise and enables reliable valley switching without external diode.
Pb-free plating & halogen-free mold compound	RoHS-compliant and JEDEC MSL-1 rated - Supports automated reflow assembly and meets global environmental regulations for consumer lighting.

Applications

LED Retrofit Lamps

Smart Home Lighting Drivers

Use Scenario: Compact GU10/MR16 LED lamps replacing halogen bulbs with universal AC input (90–265 V_AC).

IC Role / Device Role / Timing Role: Primary-side QR flyback switch operating at variable frequency (65–130 kHz) with valley detection.

Use Value: 800 V rating eliminates need for voltage clamping; low Q_g enables direct drive from low-power PWM controllers like iW3620.

Use Scenario: Dimmable smart bulbs with integrated BLE/Wi-Fi MCU and constant-current LED output.

IC Role / Device Role / Timing Role: High-efficiency primary switch in ultra-thin, thermally constrained PCB layouts (<8 mm height).

Use Value: TO-220 FullPAK's isolated tab allows direct heatsink attachment without insulator, reducing thermal resistance by 1.2 °C/W vs. standard TO-220.

Commercial LED Troffer Drivers

Outdoor LED Streetlight Power Supplies

Use Scenario: 40–60 W troffer fixtures requiring high PF (>0.9) and THD <20% in commercial office spaces.

IC Role / Device Role / Timing Role: Active clamp-assisted QR flyback switch supporting CCM/DCM hybrid control for wide-load regulation.

Use Value: 230 mJ single-pulse avalanche energy ensures reliability during line surges (IEC 61000-4-5 Level 3) without derating.

Use Scenario: IP66-rated streetlights exposed to -40 °C to +85 °C ambient with high humidity and lightning-induced transients.

IC Role / Device Role / Timing Role: Primary switch in two-stage topology (PFC + QR flyback) with reinforced isolation barrier.

Use Value: 2500 V_rms isolation withstand voltage satisfies reinforced insulation requirements per IEC 62368-1 Annex G.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	800 V, 0.08 Ω R_DS(on), TO-220 - Higher conduction loss (10×), higher Q_g (95 nC), no integrated avalanche rating.	Suitable only for low-frequency hard-switched SMPS; not qualified for QR flyback or lighting-grade reliability.	Select only if cost is primary constraint and thermal margin exceeds 40 °C; avoid in space-constrained or high-efficiency designs.
IPP60R1K0C6	650 V, 1.0 Ω R_DS(on), TO-220 - Lower voltage rating limits use to ≤230 V_AC mains; identical Q_g but higher E_oss (3.1 µJ).	Valid for EU-only 230 V_AC LED drivers; requires additional overvoltage protection for universal input.	Choose only for cost-sensitive, region-specific designs with strict BOM cost targets and no surge immunity requirements.

Compared with STP80NF55-08 and IPP60R1K0C6, IPA80R1K0CEXKSA2 uniquely combines 800 V rating, low Q_g, and certified avalanche robustness-making it the only option qualified for universal-input, high-reliability LED retrofit applications without design compromises.

Availability

IPA80R1K0CEXKSA2 is available at Aetrix Electronics and suitable for LED retrofit lamps, smart home lighting drivers, and commercial troffer power supplies requiring stable component supply across multi-year production cycles and seasonal demand spikes.

Supply support for IPA80R1K0CEXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This part belongs to the CoolMOS™ CE family-designed specifically for high-efficiency, high-reliability offline AC/DC conversion in consumer and commercial LED lighting, targeting QR flyback, PFC+flyback, and LLC resonant topologies.

FAQ

Is IPA80R1K0CEXKSA2 suitable for paralleling in high-power LED drivers?

Yes, but with specific layout constraints: gate traces must be individually routed with ferrite beads (100 Ω @ 100 MHz) or separate totem-pole drivers to prevent oscillation. Source inductance must be matched within ±5% across parallel devices, and thermal coupling must be uniform to avoid current imbalance above 3 A per device.

What is the maximum recommended gate resistor value for QR flyback operation?

The maximum recommended R_G is 15 Ω for stable switching at 130 kHz with 10 V gate drive. Higher values increase turn-on delay and reduce dv/dt immunity; values >22 Ω cause incomplete turn-on during valley switching, increasing conduction loss and thermal stress at T_j > 125 °C.

Does IPA80R1K0CEXKSA2 require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to +10 V gate drive with no requirement for negative turn-off bias. Its 3.9 V V_GS(th) max and 5.5 V gate plateau ensure clean turn-off with 0 V gate potential, even under high dv/dt conditions up to 50 V/ns.

Can this MOSFET replace older CoolMOS™ C3 or C7 parts in existing designs?

Yes, with minor validation: IPA80R1K0CEXKSA2 has identical pinout, package, and gate drive requirements as IPA80R1K0C3 and IPA80R1K0C7, but offers 12% lower Q_g and improved E_oss. Layout changes are unnecessary, though gate driver slew rate may need adjustment to match reduced Miller charge.

IPA80R1K0CEXKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 3.6A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 785 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA80R1K0CEXKSA2 FAQ

1.How can I place an order for IPA80R1K0CEXKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA80R1K0CEXKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA80R1K0CEXKSA2 reliable?

The price and inventory of IPA80R1K0CEXKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA80R1K0CEXKSA2 is usually 5 days.

3.What payment methods are accepted for IPA80R1K0CEXKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA80R1K0CEXKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA80R1K0CEXKSA2?

IPA80R1K0CEXKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA80R1K0CEXKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA80R1K0CEXKSA2?

For technical support, including IPA80R1K0CEXKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA80R1K0CEXKSA2 requirements.

6.How does Aetrix verify that IPA80R1K0CEXKSA2 is sourced from the original manufacturer or authorized distributors?

All IPA80R1K0CEXKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA80R1K0CEXKSA2 meets industry standards.

7.What is the process for return or replacement of IPA80R1K0CEXKSA2?

All IPA80R1K0CEXKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA80R1K0CEXKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA80R1K0CEXKSA2 part is unused and in its original packaging.

Return procedure for IPA80R1K0CEXKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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