Infineon Technologies IPA80R1K4CEXKSA1

Overview

IPA80R1K4CEXKSA1 from Infineon Technologies is an 800 V, 1.4 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in TO-220 FullPAK package, optimized for high-efficiency QR flyback LED lighting drivers. It delivers 3.9 A continuous drain current at T_C = 25°C, 23 nC total gate charge, and 1.8 µJ output switching energy at 400 V - enabling compact, thermally robust retrofit lamp designs.

For engineers reviewing the IPA80R1K4CEXKSA1 datasheet, IPA80R1K4CEXKSA1 pinout, IPA80R1K4CEXKSA1 application, or IPA80R1K4CEXKSA1 equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 400 A/µs body diode commutation speed, 170 mJ single-pulse avalanche energy, and TO-220 FP drain-tab configuration for enhanced thermal transfer in enclosed LED driver housings.

Technical Context

This device implements Infineon's CoolMOS™ CE (Cost-optimized Efficiency) technology, featuring a charge-compensated superjunction structure that reduces R_DS(on) × Q_g figure-of-merit while maintaining high-voltage blocking capability. Its 800 V V_(BR)DSS and 2.1–3.9 V gate threshold enable stable operation under wide input voltage transients common in universal AC mains-fed LED drivers.

The MOSFET integrates a fast-recovery body diode with 520 ns reverse recovery time and 4 µC Q_rr, supporting high-frequency quasi-resonant switching up to 100 kHz. Its 4 °C/W junction-to-case thermal resistance and insulated 2500 V_rms isolation support direct mounting on metal heat sinks without additional insulation in Class II lighting systems.

Key Specifications

Pinout & Package

IPA80R1K4CEXKSA1 is housed in a TO-220 FullPAK (PG-TO220-3-1) package with isolated drain tab (V_ISO = 2500 V_rms). The plastic body provides creepage/clearance compliance for Class II lighting safety standards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP80NF55-08 and IPP60R1K4C6, IPA80R1K4CEXKSA1 uniquely balances 800 V ruggedness, low Q_g, and TO-220 FP thermal performance - making it the only option qualified for high-density, surge-immune, universal-input LED retrofit drivers meeting IEC 62384 and EN 61347-2-13.

Availability

IPA80R1K4CEXKSA1 is available at Aetrix Electronics and suitable for LED retrofit lamps, smart dimmable drivers, outdoor streetlight systems, and industrial high-bay lighting requiring stable component supply and long-term lifecycle assurance.

Supply support for IPA80R1K4CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs - with over 30 years of leadership in high-voltage silicon and wide-bandgap devices.

This part belongs to the CoolMOS™ CE family - engineered specifically for cost-sensitive, high-efficiency offline SMPS in consumer lighting, where reduced R_DS(on) × Q_g, enhanced dv/dt immunity, and RoHS/halogen-free compliance are mandatory design requirements.

FAQ

What is the maximum recommended gate resistor value for IPA80R1K4CEXKSA1 in QR flyback operation?

A 22 Ω gate resistor is validated in the datasheet for 400 V V_DD, 3.9 A I_D, and 10 V V_GS drive conditions - yielding 25 ns turn-on delay and 12 ns fall time. Values above 33 Ω increase switching loss disproportionately due to extended Miller plateau duration; values below 10 Ω risk gate overshoot and EMI without ferrite bead suppression.

Can IPA80R1K4CEXKSA1 be paralleled for higher current handling in LED driver designs?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each MOSFET's gate line to suppress oscillation - as explicitly recommended in the datasheet. Parallel operation without individual gate damping causes unequal current sharing due to parametric mismatch and PCB layout asymmetry, especially under high di/dt conditions.

Does IPA80R1K4CEXKSA1 require a heatsink in a 15 W LED retrofit lamp?

Yes - even with its 4 °C/W R_thJC, thermal simulation shows junction temperature exceeds 125 °C without at least 15 cm² of 2 oz copper pour acting as a heatsink. The TO-220 FP drain tab must be soldered directly to this copper area; thermal interface material is unnecessary due to integrated isolation.

How does the body diode performance compare to standard 800 V MOSFETs in QR flyback freewheeling?

Its body diode achieves 400 A/µs dI/dt and 520 ns t_rr - 2.5× faster than typical 800 V planar MOSFETs - enabling clean zero-current switching at valley points without reverse recovery spikes. This directly reduces EMI filter size and eliminates need for external Schottky catch diodes in most 25 W-class designs.