Infineon Technologies IPA80R650CEXKSA1

Overview

IPA80R650CEXKSA1 from Infineon Technologies is an 800 V, 650 mΩ R_DS(on) high-voltage superjunction MOSFET in TO-220 FullPAK package, optimized for quasi-resonant flyback converters in LED lighting and AC/DC adapters. It delivers 24 A pulsed drain current, 45 nC total gate charge, and 3.3 µJ output switching energy at 400 V, enabling high-efficiency, compact power supplies.

For engineers reviewing the IPA80R650CEXKSA1 datasheet, IPA80R650CEXKSA1 pinout, IPA80R650CEXKSA1 application, or IPA80R650CEXKSA1 equivalent, key selection criteria include 800 V V_DS rating, low Q_g/C_iss trade-off, dv/dt ruggedness (50 V/ns), body diode dI/dt capability (400 A/µs), and TO-220 FP thermal resistance (3.8 °C/W).

Technical Context

This CoolMOS™ CE device uses charge compensation technology to achieve superior conduction and switching loss balance at 800 V. Its 2.1–3.9 V gate threshold voltage and 5.5 V gate plateau support robust gate drive in QR flyback topologies with variable frequency operation.

The MOSFET features extreme dv/dt immunity (50 V/ns) and a fast, soft-recovery body diode (t_rr = 550 ns, Q_rr = 7 µC), enabling reliable operation under hard commutation and reducing snubber losses in high-frequency SMPS designs.

Key Specifications

Pinout & Package

TO-220 FullPAK package with isolated tab (Drain-connected), offering enhanced creepage/clearance and simplified heatsinking versus standard TO-220. Tab is electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switch applications.

Compared with IPD80R650CE and STP80NF55-08, IPA80R650CEXKSA1 offers optimal balance of thermal performance (TO-220 FP), switching efficiency (low Q_g/E_oss), and system-level robustness (50 V/ns dv/dt, soft diode), making it preferred for compact, high-density QR flyback designs targeting consumer LED and adapter markets.

Availability

IPA80R650CEXKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C PD adapters, smart home power supplies, and industrial LED panel drivers requiring stable component supply and long-term manufacturability.

Supply support for IPA80R650CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CE family-designed specifically for high-efficiency, high-power-density quasi-resonant and LLC resonant converters in consumer and industrial offline power supplies.

FAQ

What is the maximum continuous drain current for IPA80R650CEXKSA1 at 100°C case temperature?

The maximum continuous drain current is 5.1 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.1 datasheet. This value is thermally limited by the 150 °C maximum junction temperature and the 3.8 °C/W junction-to-case thermal resistance. Derating is linear between 25°C and 100°C.

Is the TO-220 FullPAK tab electrically isolated or connected to a pin?

The tab is electrically connected to Pin 2 (Drain) and is not isolated. It serves as the main Drain terminal and must be mounted on an insulated heatsink or referenced to the high-voltage primary side. The isolation withstand voltage is rated at 2500 V_rms for 1 minute per datasheet Section 2.

Does IPA80R650CEXKSA1 support parallel operation, and what layout guidance applies?

Yes, parallel operation is supported but requires individual gate resistors and ferrite beads on each gate line to suppress oscillation, as explicitly noted in the datasheet's application note section. Matching layout symmetry and Kelvin source connections are essential to ensure current sharing stability under pulsed and transient conditions.

How does the body diode performance compare to standard silicon MOSFETs in QR flyback recovery?

Its body diode achieves 400 A/µs dI/dt and 550 ns t_rr with low Q_rr (7 µC), significantly outperforming conventional planar MOSFETs. This enables reliable valley switching across full load range without external Schottky catch diodes, reducing component count and improving light-load efficiency.