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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA90R1K2C3XKSA2

Name: IPA90R1K2C3XKSA2
Brand: Infineon Technologies
SKU: IPA90R1K2C3XKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA90R1K2C3XKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA90R1K2C3XKSA2.pdf

Description:: MOSFET N-CH 900V 5.1A TO220

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Product details

Overview

IPA90R1K2C3XKSA2 from Infineon Technologies is a 900 V, 1.2 Ω (max @ T_J=25°C) CoolMOS™ C3 superjunction power MOSFET in PG-TO220 FP package, optimized for quasi-resonant flyback and forward SMPS topologies in PC silverbox and industrial power supplies. It delivers 2.8 A continuous drain current at T_C=25°C, 28 nC total gate charge, and 68 mJ single-pulse avalanche energy.

For engineers reviewing the IPA90R1K2C3XKSA2 datasheet, IPA90R1K2C3XKSA2 pinout, IPA90R1K2C3XKSA2 application, or IPA90R1K2C3XKSA2 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (4 V/ns), E_AS capability, and gate charge optimization for high-frequency switching efficiency in 65–150 kHz SMPS designs.

Technical Context

This device implements CoolMOS™ C3 technology with optimized charge balancing for reduced R_DS(on) × Q_g figure-of-merit. Its 900 V breakdown voltage supports 400 V DC-link operation with margin, and its 4 V/ns reverse diode dv/dt rating enables robust operation in hard-switched and quasi-resonant converters without external snubbing.

The integrated body diode exhibits 310 ns reverse recovery time and 3.7 µC Q_rr at I_F=2.8 A, enabling efficient freewheeling in flyback and forward topologies. Thermal resistance R_thJC is 4.1 K/W, supporting high-power density designs when mounted on heatsinks with M2.5 screws.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	900 V - Withstands 400 V DC-link with >100% safety margin in industrial SMPS
R_DS(on),max @25°C	1.2 Ω - Enables low conduction loss at 2.8 A continuous drain current
Q_g,typ	28 nC - Reduces gate drive power and switching losses in 65–150 kHz operation
E_AS	68 mJ - Supports reliable single-pulse avalanche handling during transient overvoltage
dv/dt ruggedness	4 V/ns - Ensures stable operation without spurious turn-on in high-di/dt environments
R_thJC	4.1 K/W - Allows thermal design with standard TO-220 heatsinking for ≤31 W dissipation
t_rr	310 ns - Limits diode switching loss and EMI in discontinuous conduction mode

Pinout & Package

Package: PG-TO220 FP (full-pack, isolated tab, 3-pin through-hole). Tab is electrically connected to drain; pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 1.3 Ω gate resistance minimizes ringing
Pin 2 (Drain / Tab)	High-voltage power output	Electrically connected to metal tab; requires isolation from heatsink unless referenced to HV rail
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and load current; critical for stable switching timing

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Enables higher efficiency than prior-generation 900 V MOSFETs at 100 kHz+ switching
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for industrial temperature cycling and solderability
Extreme dv/dt rating	4 V/ns immunity prevents false triggering in high-noise SMPS layouts
Pb-free & RoHS compliant	Meets EU environmental compliance without derating or process change
High peak current capability	Supports 10 A pulsed drain current for surge-tolerant startup and overload protection

Applications

PC Silverbox Power Supply

Industrial SMPS

Use Scenario: 300–500 W AC/DC adapter for desktop PCs with active PFC + QR flyback secondary.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in quasi-resonant flyback stage operating at 65–130 kHz.

Use Value: 1.2 Ω R_DS(on) and 28 nC Q_g reduce conduction + switching losses, improving full-load efficiency by ≥0.8% vs. legacy 900 V MOSFETs.

Use Scenario: 200–400 W open-frame power supply for PLC controllers and motor drives.

IC Role / Device Role / Timing Role: Main switch in forward converter with synchronous rectification, operating at 100 kHz.

Use Value: 68 mJ E_AS and 4 V/ns dv/dt rating ensure robustness against line surges and transformer leakage spikes without snubber circuits.

Consumer Adapter

LED Driver Power Stage

Use Scenario: Compact 65 W USB-C PD adapter using QR flyback with integrated controller.

IC Role / Device Role / Timing Role: High-side switch in primary-side regulation topology with valley-switching control.

Use Value: Low Q_gd/Q_g ratio (12 nC/28 nC) improves zero-voltage switching window, reducing EMI and improving light-load efficiency.

Use Scenario: Constant-current LED driver for street lighting with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary switch in asymmetric half-bridge configuration driving resonant tank.

Use Value: 310 ns t_rr and 19 A I_rrm minimize diode reverse recovery loss, extending MOSFET lifetime under thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V, 1.4 Ω R_DS(on), 45 nC Q_g, Zener-protected gate	Higher switching loss; suited for lower-frequency (<65 kHz) hard-switched designs	Prefer where gate robustness outweighs efficiency targets
IPP90R1K2C3	Same die, PG-TO220 (non-FP) package; tab not isolated	Requires insulated mounting hardware; identical electrical specs	Select only if mechanical layout allows non-isolated drain tab

Compared with STP9NK90ZFP and IPP90R1K2C3, IPA90R1K2C3XKSA2 offers superior R_DS(on) × Q_g performance and isolated-tab packaging-critical for compact, high-efficiency QR flyback designs where thermal and electrical isolation constraints dominate.

Availability

IPA90R1K2C3XKSA2 is available at Aetrix Electronics and suitable for PC silverbox power supplies, industrial SMPS, consumer adapters, and LED driver power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA90R1K2C3XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in computing, industrial, and consumer applications.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The IPA90R1K2C3XKSA2 supports 3.2 A continuous drain current at case temperature of 100°C, derated from 5.1 A at 25°C per its thermal limit curve. This value reflects safe operation within the SOA boundary when mounted on a heatsink with adequate thermal interface and airflow.

Is the drain tab electrically isolated in this package?

Yes-the PG-TO220 FP (Full-Pack) variant features an electrically isolated drain tab, allowing direct mounting to a grounded heatsink without additional insulation. This eliminates the need for mica washers or silicone pads in most PCB layouts, simplifying thermal design and improving reliability.

Does this MOSFET require a negative gate turn-off voltage?

No-this device operates with 0 V to +10 V gate drive. The gate threshold voltage is 2.5–3.5 V, and the absolute maximum gate-source voltage is ±20 V. A negative turn-off voltage is unnecessary and not recommended, as it provides no benefit and risks overstressing the gate oxide.

How does the body diode's reverse recovery performance compare to standard silicon MOSFETs?

With t_rr = 310 ns and Q_rr = 3.7 µC at I_F = 2.8 A, its body diode recovery is significantly faster and lower-charge than conventional planar MOSFETs (typically >500 ns, >6 µC), reducing switching loss and EMI in flyback and forward converters operating above 65 kHz.

IPA90R1K2C3XKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 310µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 710 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 31W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA90R1K2C3XKSA2 FAQ

1.How can I place an order for IPA90R1K2C3XKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA90R1K2C3XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA90R1K2C3XKSA2 reliable?

The price and inventory of IPA90R1K2C3XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA90R1K2C3XKSA2 is usually 5 days.

3.What payment methods are accepted for IPA90R1K2C3XKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA90R1K2C3XKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA90R1K2C3XKSA2?

IPA90R1K2C3XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA90R1K2C3XKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA90R1K2C3XKSA2?

For technical support, including IPA90R1K2C3XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA90R1K2C3XKSA2 requirements.

6.How does Aetrix verify that IPA90R1K2C3XKSA2 is sourced from the original manufacturer or authorized distributors?

All IPA90R1K2C3XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA90R1K2C3XKSA2 meets industry standards.

7.What is the process for return or replacement of IPA90R1K2C3XKSA2?

All IPA90R1K2C3XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPA90R1K2C3XKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA90R1K2C3XKSA2 part is unused and in its original packaging.

Return procedure for IPA90R1K2C3XKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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