Infineon Technologies IPAN50R500CEXKSA1

Overview

IPAN50R500CEXKSA1 from Infineon Technologies is a 500 V, 0.5 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO220 FP package, with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 11.1 A continuous drain current at T_C = 25°C, 18.7 nC total gate charge, and 2.02 µJ output switching energy at 400 V - optimized for high-efficiency PFC and hard-switching SMPS in consumer lighting and adapter applications.

For engineers reviewing the IPAN50R500CEXKSA1 datasheet, IPAN50R500CEXKSA1 pinout, IPAN50R500CEXKSA1 application, or IPAN50R500CEXKSA1 equivalent, key selection criteria include its 550 V V_DS rating at T_j,max, 4.46 °C/W R_thJC, 50 V/ns dv/dt ruggedness, and 129 mJ single-pulse avalanche energy - critical for reliable operation in discontinuous and continuous conduction mode PFC stages.

Technical Context

This CoolMOS™ CE device implements a superjunction architecture enabling low R_DS(on) × Q_g figure-of-merit (FOM) of 9.35 Ω·nC and E_oss of 2.02 µJ at 400 V, directly supporting high-frequency, high-efficiency hard-switched topologies. Its gate plateau voltage is 5.3 V, and typical input capacitance is 433 pF at V_DS = 100 V.

The MOSFET features high commutation ruggedness: 500 A/µs diode dI/dt capability, 15 V/ns reverse diode dv/dt rating, and 129 mJ single-pulse avalanche energy at T_j = 25°C. Its TO-220 FullPAK package provides 2500 V_RMS insulation withstand voltage and 4.46 °C/W junction-to-case thermal resistance.

Key Specifications

Pinout & Package

IPAN50R500CEXKSA1 uses the PG-TO220 FP (FullPAK – Narrow Lead) package with insulated case and standardized TO-220 footprint. The drain is internally connected to the metal tab (pin 2), gate is on pin 1, and source is on pin 3 - enabling direct mounting to heatsink without isolation hardware while maintaining creepage/clearance compliance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R041CFD7 and STP5NK50ZFP, IPAN50R500CEXKSA1 offers the best balance of 500 V rating, 0.5 Ω conduction loss, and 18.7 nC gate charge for mid-power PFC - delivering measurable efficiency gain over planar devices while avoiding the drive complexity and cost premium of 650 V superjunction alternatives.

Availability

IPAN50R500CEXKSA1 is available at Aetrix Electronics and suitable for LED driver power stages, desktop PC silverbox PFC circuits, and universal AC/DC adapters requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for IPAN50R500CEXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and sensor solutions, with global manufacturing and R&D infrastructure.

IPAN50R500CEXKSA1 belongs to the CoolMOS™ CE product line - engineered specifically for cost-sensitive, high-efficiency consumer and lighting applications where 500 V blocking, low R_DS(on), and ease of drive are prioritized over ultra-high-speed switching.

FAQ

Is IPAN50R500CEXKSA1 suitable for paralleling in high-current PFC designs?

Yes, but with specific layout precautions: Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress gate oscillation and ensure current sharing. The device's 500 A/µs diode dI/dt capability and matched R_DS(on) tolerance support stable parallel operation when gate loop inductance is minimized and source inductance is balanced across units.

What is the maximum recommended gate resistor value for 65 kHz PFC operation?

For stable 65 kHz operation with 13 V gate drive, a 10 Ω gate resistor is recommended to limit peak gate current to ~1.3 A while maintaining 30 ns turn-off delay and 12 ns fall time. Values above 15 Ω increase switching losses significantly due to extended Miller plateau duration, while values below 5 Ω risk gate ringing without proper PCB layout control.

Does IPAN50R500CEXKSA1 require a negative gate turn-off voltage?

No - the device is fully specified for 0 V to +13 V gate drive and does not require negative turn-off bias. Its 30 V maximum V_GS rating and 5.3 V gate plateau allow safe operation with standard unipolar 12 V drivers. Negative bias is unnecessary unless extreme dv/dt immunity (>70 V/ns) is required in non-standard topologies.

How does the 2500 V_RMS insulation rating impact heatsink mounting?

The 2500 V_RMS isolation between drain (metal tab) and other pins allows direct mounting to a grounded heatsink only when using an electrically insulating thermal pad rated for ≥2500 V_RMS. Without such insulation, the drain becomes live at high voltage, posing safety and EMI risks - mechanical mounting must maintain minimum creepage distance per IEC 62368-1.