Infineon Technologies IPAN60R280P7SXKSA1

Overview

IPAN60R280P7SXKSA1 from Infineon Technologies is a 600 V, 280 mΩ superjunction N-channel power MOSFET in PG-TO220 FP package, optimized for high-efficiency PFC and resonant LLC converters. It delivers 36 A pulsed drain current, 18 nC total gate charge, and 900 A/µs body diode commutation speed, enabling robust hard-switching operation in server PSUs and telecom rectifiers.

For engineers reviewing the IPAN60R280P7SXKSA1 datasheet, IPAN60R280P7SXKSA1 pinout, IPAN60R280P7SXKSA1 application, or IPAN60R280P7SXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, ESD robustness (>2 kV HBM), dv/dt ruggedness (80 V/ns), and low E_oss (2.1 µJ @ 400 V) for ZVS/ZCS design validation.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell architecture with optimized charge balancing, delivering lower R_DS(on)×A (0.214 Ω @ 25°C) and reduced switching losses versus P6 generation. Its gate plateau voltage is 5.2 V, and dynamic parameters-C_iss = 761 pF, C_oss = 14 pF, Q_gd/Q_g ratio of ~33%-support clean turn-on/turn-off with minimal external gate resistance.

The integrated body diode exhibits 0.9 V forward voltage at 3.8 A and 158 ns reverse recovery time under 100 A/µs diF/dt stress, enabling reliable operation in bidirectional topologies without external SiC diodes. Thermal resistance R_thJC is 5.27 °C/W, supporting 24 W continuous dissipation at T_C = 25°C.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK – Narrow Lead), through-hole, isolated drain tab, 3-pin configuration with internal source-to-case isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with IPW60R099P7 and IPP60R190P7, IPAN60R280P7SXKSA1 offers the lowest gate charge among P7 600 V devices, enabling simpler, lower-cost gate drivers while retaining full ruggedness for hard-switching - ideal for cost-sensitive, thermally constrained 300–800 W applications.

Availability

IPAN60R280P7SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified reliability, and long-term production continuity.

Supply support for IPAN60R280P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The CoolMOS™ P7 product line targets high-efficiency AC/DC conversion in computing, communications, and industrial power supplies, emphasizing ruggedness, ease of use, and system-level thermal performance over raw parameter optimization.

FAQ

Is IPAN60R280P7SXKSA1 suitable for paralleling in high-current PFC designs?

Yes - it supports paralleling with proper gate layout practices. Infineon recommends using ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation. Matching R_DS(on) tolerance (±20%) and thermal coupling between devices is critical to ensure current sharing within ±15% across temperature and load.

What is the maximum recommended gate resistor value for hard-switching PFC operation?

For 65–100 kHz PFC with 13 V gate drive, a 10 Ω gate resistor is validated per datasheet test conditions. Increasing beyond 15 Ω raises turn-off delay and increases switching loss; values below 5 Ω may cause ringing due to PCB inductance interacting with low Q_gd/Q_g ratio.

Does the PG-TO220 FP package provide electrical isolation between drain and mounting surface?

Yes - the PG-TO220 FP (FullPAK) variant features an electrically isolated drain tab. The metal tab is internally connected only to the drain terminal and insulated from the source and gate pins, allowing direct heatsink mounting without insulating pads in floating-ground topologies.

How does the body diode's 900 A/µs diF/dt rating impact layout requirements?

This rating demands minimized source loop inductance: keep source trace short and wide, use Kelvin source connection if possible, and avoid shared source paths between multiple devices. Layout-induced inductance >10 nH can limit achievable diF/dt and trigger oscillation or localized heating during commutation.