Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPAN60R360P7SXKSA1

Name: IPAN60R360P7SXKSA1
Brand: Infineon Technologies
SKU: IPAN60R360P7SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPAN60R360P7SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPAN60R360P7SXKSA1.pdf

Description:: MOSFET N-CH 650V 9A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,564

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPAN60R360P7SXKSA1 from Infineon Technologies is a 600 V, 360 mΩ R_DS(on) CoolMOS™ P7 superjunction power MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers low switching loss (E_oss = 1.6 µJ @ 400 V), high commutation ruggedness (dI_F/dt = 900 A/µs), and robust body diode for hard-switched PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPAN60R360P7SXKSA1 datasheet, IPAN60R360P7SXKSA1 pinout, IPAN60R360P7SXKSA1 application, or IPAN60R360P7SXKSA1 equivalent, key selection criteria include verified 650 V V_DS rating at T_j,max, 13 nC total gate charge, 26 A pulsed drain current, JEDEC-qualified ruggedness, and ESD robustness >2 kV HBM - all critical for high-reliability AC-DC front-end design.

Technical Context

This 600 V superjunction MOSFET uses Infineon's 7th-generation CoolMOS™ process with optimized charge balancing for reduced Q_g (13 nC) and ultra-low C_oss-related energy (E_oss = 1.6 µJ). Its gate plateau voltage of 5.2 V enables stable turn-on under varying drive conditions, while dI_F/dt = 900 A/µs supports fast, reliable body diode commutation in continuous conduction mode (CCM) PFC.

The device features a thermally enhanced TO-220 FullPAK narrow-lead package with R_thJC = 5.61 °C/W, enabling high-power density operation up to 150 °C junction temperature. Its 80 V/ns dv/dt ruggedness and 50 V/ns reverse diode dv/dt ensure noise immunity in high-frequency, high-dV/dt environments like resonant LLC half-bridges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V at T_j,max: ensures safe operation with 400–450 V DC bus transients in 380 V nominal PFC stages
R_DS(on) max	360 mΩ @ T_j = 150 °C: defines conduction loss ceiling in thermal-limited designs
Q_g typ	13 nC @ V_DD = 400 V: determines gate driver power and switching speed control in 100–300 kHz applications
E_oss	1.6 µJ @ 400 V: directly reduces turn-off loss and improves efficiency in hard-switched topologies
dI_F/dt max	900 A/µs: enables reliable zero-voltage switching (ZVS) initiation without diode failure in LLC resonant converters
T_j max	150 °C: allows full-rated operation in compact heatsink-constrained server and telecom power supplies
V_ISO	2500 V_rms @ 1 min: provides reinforced insulation for primary-side isolation in offline SMPS

Pinout & Package

Package: PG-TO220 FP (FullPAK, narrow lead), thermally optimized for PCB-mounted heatsinking with isolated drain tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal requiring <13 nC charge for full enhancement; sensitive to ESD (>2 kV HBM)
Pin 2	Drain	High-voltage output node connected to internal die backside; electrically tied to heatsink mounting surface
Pin 3	Source	Power return path and gate reference; forms common node with driver ground in low-side configurations

Key Features

Feature	Design Value
Hard/soft switching compatibility	Validated for both CCM PFC and LLC resonant stages via 900 A/µs dI_F/dt and low ringing tendency
Body diode ruggedness	JEDEC-qualified hard commutation survival with no degradation after repetitive avalanche testing (E_AS = 27 mJ)
Thermal performance	R_thJC = 5.61 °C/W enables 22 W dissipation at T_C = 25 °C - suitable for forced-air-cooled 500–1000 W designs
ESD robustness	HBM >2 kV across all pins eliminates need for external protection in automated assembly lines
Low gate charge asymmetry	Q_gd/Q_g ≈ 31% (4 nC / 13 nC) improves controllability of Miller-induced turn-on during high dV/dt transitions

Applications

Server Power Supply (PFC Stage)

Telecom Rectifier (LLC Resonant)

Use Scenario: Active clamp PFC stage in 1 kW 380 V input server PSU operating at 70 kHz with CCM control.

IC Role / Device Role / Timing Role: High-side switch handling 10 A RMS input current; synchronized to controller PWM with 10 ns fall time.

Use Value: 360 mΩ R_DS(on) and 1.6 µJ E_oss reduce conduction + switching losses by 18% vs. P6 generation, enabling 96.2% efficiency at full load.

Use Scenario: Primary-side half-bridge switch in 2 kW telecom rectifier using LLC topology with 250 kHz resonant frequency.

IC Role / Device Role / Timing Role: ZVS-capable power switch with 900 A/µs dI_F/dt supporting body-diode-assisted soft turn-on.

Use Value: Low Q_g (13 nC) and stable V_plateau (5.2 V) enable precise dead-time control and reduce gate driver losses by 35%.

Industrial UPS Inverter Stage

LED Driver (High-Voltage Buck-PFC)

Use Scenario: Output inverter bridge in 3 kVA online UPS with bidirectional energy flow and 16 kHz PWM modulation.

IC Role / Device Role / Timing Role: Low-side switching element subjected to repeated hard commutation during battery-to-grid transfer.

Use Value: JEDEC-qualified avalanche energy (E_AS = 27 mJ) and 80 V/ns dv/dt ruggedness prevent failure during grid fault recovery sequences.

Use Scenario: Single-stage buck-PFC LED driver for street lighting, accepting 277 V AC input with 95% efficiency target.

IC Role / Device Role / Timing Role: Main switching transistor operating in discontinuous conduction mode (DCM) at 120 kHz.

Use Value: 0.9 V V_SD forward drop and 145 ns t_rr minimize diode conduction loss and reverse recovery spikes in high-frequency DCM operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R041P7	Lower R_DS(on) (41 mΩ), higher Q_g (49 nC), same 600 V rating and TO-247 package	Better conduction loss but requires stronger gate driver; unsuitable for space-constrained TO-220 layouts	Select when thermal headroom exists and peak efficiency >97% is required in 1.5 kW+ PFC designs
STP60N6F7	600 V, 0.36 Ω R_DS(on), 15 nC Q_g, but only 100 °C T_j,max and no JEDEC avalanche validation	Limited to lower ambient temperatures; not qualified for telecom or industrial UPS duty cycles	Acceptable only for cost-sensitive consumer adapters where 150 °C operation and hard commutation are not required

Compared with IPW60R041P7 and STP60N6F7, IPAN60R360P7SXKSA1 uniquely balances 150 °C operation, JEDEC-qualified ruggedness, and TO-220 footprint - making it optimal for thermally dense, high-reliability 500–1000 W industrial and telecom power stages where package size and long-term stress validation are decisive.

Availability

IPAN60R360P7SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long lifecycle support, and JEDEC-qualified ruggedness.

Supply support for IPAN60R360P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power supplies operating up to 150 °C junction temperature.

FAQ

What is the maximum continuous drain current for IPAN60R360P7SXKSA1 at 100 °C case temperature?

The maximum continuous drain current is 6 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This value is thermally limited by R_thJC = 5.61 °C/W and P_tot derating - not by silicon current capability, which supports 26 A pulsed operation.

Does IPAN60R360P7SXKSA1 require a gate resistor for stability in hard-switching PFC applications?

Yes - a 10 Ω gate resistor is used in the datasheet's switching characterization (Table 9), and Infineon recommends ferrite beads or separate totem-pole drivers when paralleling devices to suppress oscillation. The low ringing tendency reduces but does not eliminate need for controlled gate impedance.

How does the body diode performance compare to previous CoolMOS™ generations?

This P7 device achieves 900 A/µs dI_F/dt and 145 ns t_rr, exceeding P6's ~600 A/µs and improving ZVS reliability in LLC. Its V_SD = 0.9 V at 2.7 A is identical to P6, but Q_rr is reduced to 0.74 µC - lowering reverse recovery loss by ~12% in high-frequency operation.

Is IPAN60R360P7SXKSA1 suitable for use in isolated flyback converters?

No - it is not recommended for flyback primary switches due to its 600 V rating being marginal for 277 V AC designs with line surges. Its optimized parameters (low E_oss, high dI_F/dt) target high-current, high-frequency topologies like PFC and LLC, not low-duty-cycle flyback operation.

IPAN60R360P7SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 360mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 140µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 555 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 22W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPAN60R360P7SXKSA1 FAQ

1.How can I place an order for IPAN60R360P7SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPAN60R360P7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPAN60R360P7SXKSA1 reliable?

The price and inventory of IPAN60R360P7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN60R360P7SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPAN60R360P7SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPAN60R360P7SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPAN60R360P7SXKSA1?

IPAN60R360P7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPAN60R360P7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPAN60R360P7SXKSA1?

For technical support, including IPAN60R360P7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPAN60R360P7SXKSA1 requirements.

6.How does Aetrix verify that IPAN60R360P7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPAN60R360P7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN60R360P7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPAN60R360P7SXKSA1?

All IPAN60R360P7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN60R360P7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPAN60R360P7SXKSA1 part is unused and in its original packaging.

Return procedure for IPAN60R360P7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.