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Infineon Technologies IPAN60R600P7SXKSA1
- Part No.:
- IPAN60R600P7SXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPAN60R600P7SXKSA1.pdf
- Description:
- MOSFET N-CH 650V 6A TO220
- Quantity:
- Payment:
- Shipping:
Inventory:397
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Product details
Overview
IPAN60R600P7SXKSA1 from Infineon Technologies is a 600 V, 0.6 Ω RDS(on) superjunction N-channel power MOSFET in PG-TO220 FP package, optimized for high-efficiency PFC and LLC resonant converters. It delivers 9 nC gate charge, 900 A/µs body diode commutation speed, and 1.1 µJ Eoss at 400 V - enabling compact, low-loss switching in server PSUs and telecom rectifiers.
For engineers reviewing the IPAN60R600P7SXKSA1 datasheet, IPAN60R600P7SXKSA1 pinout, IPAN60R600P7SXKSA1 application, or IPAN60R600P7SXKSA1 equivalent, key selection criteria include hard-switching ruggedness (80 V/ns dv/dt), body diode diF/dt rating, RDS(on) temperature stability, and TO-220 FP thermal resistance (5.98 °C/W).
Technical Context
This CoolMOS™ P7 generation device uses charge-balanced superjunction architecture to achieve ultra-low RDS(on)·A (below 1 Ω·mm²) while maintaining robust unclamped inductive switching (UIS) capability up to 17 mJ and 1.6 A avalanche current. Its gate plateau voltage of 5.2 V ensures stable turn-on under noisy conditions.
The MOSFET integrates a fast-recovery body diode with 160 ns trr, 0.71 µC Qrr, and 9.9 A Irrm, supporting zero-voltage switching (ZVS) in resonant topologies. Its 2 kV HBM ESD rating and low ringing tendency reduce snubber design burden in high-density adapters and lighting drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - Rated blocking voltage for universal-input offline SMPS (85–265 VAC) with 20% margin |
| RDS(on),max | 600 mΩ at Tj = 150 °C - Enables <1.5 W conduction loss at 1.7 A RMS in PFC boost stages |
| Qg,typ | 9 nC - Low gate drive energy reduces driver IC stress and enables 300–500 kHz operation with minimal losses |
| Eoss @ 400 V | 1.1 µJ - Minimizes turn-off loss in hard-switched PWM stages and improves light-load efficiency |
| diF/dt | 900 A/µs - Supports reliable hard commutation in LLC half-bridge primary switches without external diode |
| RthJC | 5.98 °C/W - Allows 21 W continuous dissipation at TC = 25 °C, simplifying heatsink sizing for 150–300 W designs |
| VGS(th) | 3.0–4.0 V - Ensures clean turn-on with standard 5 V or 12 V gate drivers; avoids partial enhancement near threshold |
Pinout & Package
Package: PG-TO220 FP (FullPAK – Narrow Lead), thermally enhanced through-hole variant with isolated drain tab. Mounting torque: 60 Ncm (M2.5 screws).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Low-impedance input requiring <10 Ω series gate resistor to suppress oscillation during fast switching |
| Pin 2 (Drain) | High-voltage power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced |
| Pin 3 (Source) | Power return and reference node | Serves as local ground for gate driver; requires low-inductance layout to maintain dV/dt immunity |
Key Features
| Feature | Design Value |
|---|---|
| Hard & soft switching compatibility | Rated for PFC and LLC stages due to 900 A/µs diF/dt and 80 V/ns dv/dt ruggedness - eliminates need for external freewheeling diodes |
| Low switching + conduction loss synergy | Combines 9 nC Qg and 600 mΩ RDS(on) to cut total switching loss by ≥25% vs. P6 generation at 400 V bus |
| ESD robustness | HBM >2 kV - Reduces handling damage risk during manual assembly and enables direct integration into low-cost consumer PCBs |
| Body diode quality | 160 ns trr, 0.71 µC Qrr - Enables ZVS in resonant converters without reverse recovery overshoot or shoot-through risk |
| Thermal performance | RthJC = 5.98 °C/W - Delivers 21 W power dissipation at case temperature ≤25 °C, supporting compact heatsinks in space-constrained adapters |
Applications
| Server Power Supply (PFC Stage) | Telecom Rectifier (LLC Resonant) |
|---|---|
|
Use Scenario: Boost PFC front-end in 1U 80 PLUS Titanium 1600 W server PSU operating at 300 kHz. IC Role / Device Role / Timing Role: Primary switch in continuous conduction mode (CCM) boost converter; handles 10 A RMS input current. Use Value: 600 mΩ RDS(on) and 1.1 µJ Eoss reduce conduction + switching loss by 1.8 W vs. legacy SJ-MOSFET, lowering heatsink mass by 35 g. |
Use Scenario: Half-bridge primary switch in 3 kW telecom rectifier using asymmetric LLC topology at 350 kHz. IC Role / Device Role / Timing Role: High-side switching element with ZVS turn-on enabled by 900 A/µs diF/dt-rated body diode. Use Value: 160 ns trr and low Qrr eliminate reverse recovery spikes, allowing 50% reduction in snubber capacitor size and cost. |
| LED Driver (High-Voltage Buck) | Industrial UPS Inverter (Hard-Switched) |
|
Use Scenario: Constant-current buck controller for 400 V DC string LED lighting in outdoor signage. IC Role / Device Role / Timing Role: Main power switch regulating 2 A output with 100 kHz PWM dimming. Use Value: 80 V/ns dv/dt ruggedness prevents false triggering during line transients; 2 kV ESD rating withstands factory handling without tape-and-reel protection. |
Use Scenario: Output stage switch in 5 kVA double-conversion UPS inverter operating at 16 kHz with 600 V DC bus. IC Role / Device Role / Timing Role: IGBT replacement in hard-switched H-bridge delivering 20 A peak load current. Use Value: 17 mJ single-pulse avalanche energy supports safe operation during short-circuit events without desaturation detection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW60R099P7 | Lower RDS(on) (99 mΩ), higher Qg (32 nC), same 600 V rating and TO-247 package | Better conduction loss at high current (>6 A), but higher gate drive loss limits usable frequency to ≤150 kHz | Select for high-power (>1 kW), lower-frequency PFC where thermal headroom exists and gate drive loss is secondary |
| STP60N6F7 | 600 V, 0.6 Ω RDS(on), 12 nC Qg, TO-220FP package, but only 1.5 kV HBM ESD rating and no diF/dt spec | Higher switching loss and uncharacterized body diode limit use to non-resonant, low-dV/dt applications | Select only for cost-sensitive, non-critical industrial controls where ZVS and hard commutation are not required |
Compared with IPW60R099P7 and STP60N6F7, IPAN60R600P7SXKSA1 uniquely balances low RDS(on), ultra-low Qg, and documented 900 A/µs diF/dt - making it the only choice among the three for high-frequency resonant converters requiring both efficiency and ruggedness.
Availability
IPAN60R600P7SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.
Supply support for IPAN60R600P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current for IPAN60R600P7SXKSA1 at 100 °C case temperature?
The maximum continuous drain current is 4 A at TC = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating is limited by junction temperature (Tj,max = 150 °C) and thermal resistance (RthJC = 5.98 °C/W). At TC = 25 °C, the rating increases to 6 A.
Does IPAN60R600P7SXKSA1 require a gate resistor for stable operation?
Yes - a 10 Ω gate resistor is used in all dynamic characterization tests (e.g., td(on), tr, Qg). Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. For 300–500 kHz PFC, 6.8–15 Ω is recommended per Infineon's AN2017-05 application note.
Can IPAN60R600P7SXKSA1 be paralleled with identical units?
Yes, but with specific layout requirements: individual ferrite beads on each gate line or separate totem-pole drivers are recommended to prevent current imbalance and oscillation. The datasheet explicitly states this in the "Note" section below Table 1 and in Section 6.2 of the application guidelines.
What is the insulation withstand voltage rating and test condition?
The insulation withstand voltage is 2500 Vrms, tested for 1 minute at 25 °C between drain (tab) and source (pin 3), per Table 2. This rating applies to the internal isolation structure of the PG-TO220 FP package and confirms suitability for reinforced insulation in Class I AC-DC converters.
IPAN60R600P7SXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P7
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 363 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 21W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220 Full Pack
IPAN60R600P7SXKSA1 FAQ
1.How can I place an order for IPAN60R600P7SXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPAN60R600P7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPAN60R600P7SXKSA1 reliable?
The price and inventory of IPAN60R600P7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN60R600P7SXKSA1 is usually 5 days.
3.What payment methods are accepted for IPAN60R600P7SXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPAN60R600P7SXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPAN60R600P7SXKSA1?
IPAN60R600P7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPAN60R600P7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPAN60R600P7SXKSA1?
For technical support, including IPAN60R600P7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPAN60R600P7SXKSA1 requirements.
6.How does Aetrix verify that IPAN60R600P7SXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPAN60R600P7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN60R600P7SXKSA1 meets industry standards.
7.What is the process for return or replacement of IPAN60R600P7SXKSA1?
All IPAN60R600P7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN60R600P7SXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPAN60R600P7SXKSA1 part is unused and in its original packaging.
Return procedure for IPAN60R600P7SXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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