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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPAN70R750P7SXKSA1

Name: IPAN70R750P7SXKSA1
Brand: Infineon Technologies
SKU: IPAN70R750P7SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPAN70R750P7SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPAN70R750P7SXKSA1.pdf

Description:: MOSFET N-CH 700V 6.5A TO220

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Product details

Overview

IPAN70R750P7SXKSA1 from Infineon Technologies is a 700 V, 0.75 Ω R_DS(on) max, CoolMOS™ P7 superjunction MOSFET in PG-TO220 FP package with drain-connected tab, gate on pin 1, source on pin 3. It delivers 8.3 nC typical gate charge, 0.9 µJ E_oss at 400 V, and 15.4 A pulsed drain current - optimized for high-efficiency, high-power-density flyback converters in consumer chargers and LED lighting.

For engineers reviewing the IPAN70R750P7SXKSA1 datasheet, IPAN70R750P7SXKSA1 pinout, IPAN70R750P7SXKSA1 application, or IPAN70R750P7SXKSA1 equivalent, key selection criteria include its 700 V V_DS, low R_DS(on)×Q_g figure-of-merit, JEDEC-qualified thermal ruggedness, integrated ESD protection (HBM Class 1C), and validated performance in 65–100 kHz flyback topologies with tight thermal constraints.

Technical Context

This CoolMOS™ P7 device implements a superjunction cell structure enabling fast switching with reduced capacitive losses: C_iss = 306 pF, C_oss = 5.1 pF, and Co(er) = 13 pF at 400 V. Its gate plateau voltage is 4.4 V, supporting robust drive margin with standard 10–13 V gate drivers.

Thermally, it achieves 6.0 °C/W junction-to-case resistance and supports continuous operation up to 150 °C junction temperature. The reverse diode exhibits 0.9 V forward drop at 1.5 A and 200 ns trr with 0.7 µC Q_rr, enabling reliable discontinuous conduction mode (DCM) flyback operation without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	700 V - Withstands 400 V DC-link with >75% voltage margin in universal-input flyback designs.
R_DS(on), max	0.75 Ω @ T_j = 150 °C - Enables <1.5 W conduction loss at 5 A RMS in compact 20 W–65 W adapters.
Q_g, typ	8.3 nC - Reduces gate drive power and enables efficient operation with low-side driver ICs like IRS2001.
E_oss	0.9 µJ @ 400 V - Low output energy loss minimizes dead-time switching loss and improves light-load efficiency.
T_j max	150 °C - Supports sealed enclosure operation without forced airflow in slim TV power supplies.
ESD Class	HBM Class 1C (1 kV) - Integrated Zener-protected gate withstands assembly-level ESD events without external clamping.
dv/dt Ruggedness	100 V/ns - Immune to false turn-on during high-slew-rate switching in high-frequency flyback layouts.

Pinout & Package

Package: PG-TO220 FP (FullPAK – Narrow Lead), thermally enhanced with drain-connected metal tab for direct heatsink mounting. Pin 2 is drain (tab), Pin 1 is gate, Pin 3 is source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤10 V logic-level drive; RG = 10 Ω typical; sensitive to layout-induced ringing.
Pin 2 / Tab	Drain	High-voltage output node connected to transformer primary; electrically exposed tab requires isolation pad or insulating washer.
Pin 3	Source	Return path for load current and gate drive loop; must be routed with minimal inductance to reduce switching overshoot.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	Enables >92% full-load efficiency in 65 W USB PD adapters without active clamp or ZVS assistance.
Low E_oss (0.9 µJ)	Reduces turn-off loss by ~35% vs. prior-generation 700 V SJ-MOSFETs at 100 kHz, easing thermal design.
Integrated ESD protection diode	Eliminates need for external gate Zener in production assemblies, reducing BOM count and PCB area.
JEDEC-qualified reliability	Validated per JESD22-A108 for 1000 h at 150 °C, ensuring long-term stability in enclosed lighting drivers.
Optimized dv/dt immunity	Supports stable operation in high-noise environments (e.g., multi-output SMPS with shared ground planes).

Applications

USB-C Charger Power Stage

Smart LED Driver

Use Scenario: 45 W dual-port USB-C charger operating at 90 kHz DCM flyback with 90–264 VAC input.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch controlling energy transfer to secondary; synchronized with PWM controller (e.g., ICE5QSxG).

Use Value: Delivers 0.5 °C lower case temperature vs. legacy 700 V MOSFETs under identical thermal pad area, enabling plastic enclosure compliance.

Use Scenario: Dimmable 30 W constant-current LED driver for commercial downlights with TRIAC phase-cut dimming.

IC Role / Device Role / Timing Role: Main switching transistor in quasi-resonant flyback topology; handles line-voltage transients during dimmer commutation.

Use Value: Survives 100 V/ns dv/dt spikes induced by leading-edge dimmers without false triggering, eliminating flicker.

Flat-Screen TV Standby Supply

Universal AC/DC Adapter

Use Scenario: 5 V/1 A standby power supply in 55″ LCD TV, required to operate continuously at 65 °C ambient.

IC Role / Device Role / Timing Role: High-side switch in auxiliary flyback converter powering MCU, IR receiver, and memory retention circuits.

Use Value: Maintains R_DS(on) drift <±5% over 10-year life at 65 °C case temperature, ensuring stable standby current.

Use Scenario: Multi-chemistry 65 W laptop adapter supporting 15–20 V output with adaptive voltage regulation.

IC Role / Device Role / Timing Role: Primary switch in variable-frequency flyback with valley-switching control (e.g., NCP1342).

Use Value: Enables 25 mm height reduction vs. TO-220FP alternatives due to superior thermal resistance (6.0 °C/W) and low E_oss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage flyback switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7	650 V rating, 0.099 Ω R_DS(on), higher Q_g (17 nC), no integrated ESD diode	Better conduction loss below 400 V DC-link but unsuitable for 230 VAC universal input with surge margin	Select only when DC-link is clamped ≤420 V and gate drive strength exceeds 2 A peak.
IPW65R041CFD7	650 V, 0.041 Ω R_DS(on), 12.5 nC Q_g, CoolSiC™ hybrid diode (trr < 30 ns)	Superior light-load efficiency and zero-recovery loss, but 3× cost premium and higher gate drive complexity	Prefer for >100 kHz QR/ZVS designs where diode recovery dominates loss budget.

Compared with IPP65R099C7 and IPW65R041CFD7, IPAN70R750P7SXKSA1 offers optimal balance of 700 V robustness, low gate charge, and integrated ESD protection - making it the most cost-effective choice for mainstream 65–100 kHz flyback converters targeting consumer price points.

Availability

IPAN70R750P7SXKSA1 is available at Aetrix Electronics and suitable for USB-C charger power stages, smart LED drivers, flat-screen TV standby supplies, and universal AC/DC adapters requiring stable component supply across multi-year production cycles.

Supply support for IPAN70R750P7SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the CoolMOS™ P7 family - engineered specifically for cost-sensitive, high-volume consumer power supplies where efficiency, thermal density, and ease of use outweigh ultra-high-performance requirements.

FAQ

What is the maximum recommended gate resistor value for stable operation?

The datasheet specifies a test condition of R_G = 5.3 Ω for dynamic characterization. For stable operation without oscillation, R_G should be 5–10 Ω when using standard gate drivers (e.g., IR2110). Values above 15 Ω increase switching time and E_on/E_off, while values below 3 Ω risk gate ringing due to PCB inductance - verified via 100 MHz oscilloscope measurement of V_GS waveform.

Can this MOSFET be paralleled in high-power designs?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each gate line or individual totem-pole drivers per device. Parallel operation without such measures causes current imbalance due to parameter spread (R_DS(on) tolerance ±20%, threshold voltage ±0.5 V) and layout asymmetry - confirmed in Infineon Application Note AN2017-05.

Does the integrated ESD diode affect switching performance?

No - the ESD protection diode is a low-capacitance Zener structure placed between gate and source, with negligible impact on C_iss or Q_g. It activates only during ESD events (>1 kV), not during normal switching; measured C_iss remains 306 pF at 250 kHz, matching devices without integrated protection.

Is thermal derating required above 100 °C case temperature?

Yes - the datasheet specifies P_tot = 20.8 W at T_C = 25 °C, derating linearly to zero at T_C = 150 °C. At T_C = 100 °C, maximum continuous power drops to 10.4 W. This is enforced by the 6.0 °C/W R_thJC limit and junction temperature cap of 150 °C - validated via transient thermal impedance curves (Z_thJC vs. pulse width).

IPAN70R750P7SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P7

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 700 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 750mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs:: 8.3 nC @ 10 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 306 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 20.8W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPAN70R750P7SXKSA1 FAQ

1.How can I place an order for IPAN70R750P7SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPAN70R750P7SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPAN70R750P7SXKSA1 reliable?

The price and inventory of IPAN70R750P7SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPAN70R750P7SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPAN70R750P7SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPAN70R750P7SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPAN70R750P7SXKSA1?

IPAN70R750P7SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPAN70R750P7SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPAN70R750P7SXKSA1?

For technical support, including IPAN70R750P7SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPAN70R750P7SXKSA1 requirements.

6.How does Aetrix verify that IPAN70R750P7SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPAN70R750P7SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPAN70R750P7SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPAN70R750P7SXKSA1?

All IPAN70R750P7SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPAN70R750P7SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPAN70R750P7SXKSA1 part is unused and in its original packaging.

Return procedure for IPAN70R750P7SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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