Infineon Technologies IPAN80R360P7XKSA1

Overview

IPAN80R360P7XKSA1 from Infineon is an 800V superjunction N-channel MOSFET in PG-TO220 FP package, featuring R_DS(on) = 0.36 Ω (max), Q_g = 30 nC (typ), V_GS(th) = 3 V (typ), integrated Zener ESD protection, and JEDEC-qualified industrial reliability. It serves as a high-voltage switching element in flyback and PFC stages for LED lighting, low-power adapters, and auxiliary power supplies.

For engineers reviewing the IPAN80R360P7XKSA1 datasheet, IPAN80R360P7XKSA1 pinout, IPAN80R360P7XKSA1 application, or IPAN80R360P7XKSA1 equivalent, key selection criteria include 800V V_DS rating, 0.36 Ω on-resistance at 10 V gate drive, 3 V threshold voltage with ±0.5 V variation, E_oss = 3.2 µJ at 500 V, and TO-220 FP drain-tab thermal configuration.

Technical Context

This CoolMOS™ P7 device uses charge-compensation superjunction architecture to achieve best-in-class figure-of-merit (R_DS(on) × E_oss) while maintaining robust dv/dt ruggedness of 100 V/ns and reverse diode recovery Q_rr = 12 µC. Its 3 V gate threshold enables direct compatibility with 3.3 V and 5 V controllers without level-shifting.

The integrated Zener-protected gate structure reduces ESD-related failures during assembly, and its fully optimized thermal design delivers R_thJC = 4.2 °C/W with drain-connected tab for efficient heat transfer to heatsinks. The device supports both hard-switched flyback and continuous-conduction-mode PFC topologies up to 150 °C junction temperature.

Key Specifications

Pinout & Package

IPAN80R360P7XKSA1 is housed in PG-TO220 FP (FullPAK – Narrow Lead) package with isolated plastic body and electrically connected drain tab. The drain is internally bonded to the metal tab for optimal thermal conduction and high-current path integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPW65R041CFD7 and STP80NF55-08, IPAN80R360P7XKSA1 delivers superior 800 V system margin, 3× lower E_oss, integrated ESD protection, and tighter V_GS(th) distribution-making it optimal for next-generation compact, high-reliability AC/DC converters.

Availability

IPAN80R360P7XKSA1 is available at Aetrix Electronics and suitable for LED lighting drivers, USB-C charger secondary stages, and auxiliary power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPAN80R360P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of silicon innovation and global manufacturing scale.

This device belongs to the CoolMOS™ P7 superjunction MOSFET family, engineered specifically for high-efficiency, high-power-density offline SMPS designs targeting consumer, industrial, and renewable energy applications.

FAQ

What is the maximum continuous drain current for IPAN80R360P7XKSA1 at 100°C case temperature?

The maximum continuous drain current is 8.6 A at T_C = 100°C, as specified in Table 2 of the datasheet. This value reflects thermal derating due to junction-to-case thermal resistance (4.2 °C/W) and maximum allowable junction temperature (150°C). Operation above this current requires forced-air cooling or reduced ambient conditions.

Does IPAN80R360P7XKSA1 require external gate protection when used with standard PWM controllers?

No external gate protection is required-the device integrates a Zener diode for ESD protection rated to HBM Class 2 (2 kV). However, a small series gate resistor (5–10 Ω) is recommended to dampen ringing and control dV/dt during switching transitions, especially in high-frequency or high-noise environments.

Can IPAN80R360P7XKSA1 be paralleled with identical units in high-current PFC designs?

Yes-its tight V_GS(th) distribution (±0.5 V) and matched dynamic parameters enable stable current sharing. Infineon recommends using individual ferrite beads (e.g., 100 Ω @ 100 MHz) in each gate path to suppress oscillation and ensure balanced turn-on timing across parallel devices.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The typical reverse recovery charge is 12 µC, measured at V_R = 400 V, I_F = 2.8 A, and di_F/dt = 50 A/µs (Table 7). This low Q_rr minimizes commutation loss in quasi-resonant flyback and active-clamp topologies where the body diode conducts during dead time.