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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB011N04NF2SATMA1

Name: IPB011N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPB011N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB011N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB011N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

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Product details

Overview

IPB011N04NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 40 V drain-source voltage, 1.15 mΩ maximum R_DS(on) at V_GS = 10 V, and 201 A continuous drain current at T_C = 25 °C. It features 100% avalanche tested ruggedness, optimized gate charge (Q_g = 210 nC), and is designed for high-efficiency synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the IPB011N04NF2SATMA1 datasheet, IPB011N04NF2SATMA1 pinout, IPB011N04NF2SATMA1 application, or IPB011N04NF2SATMA1 equivalent, key selection criteria include low conduction loss under high-current DC/DC output stages, thermal performance with 0.4 °C/W R_thJC, and robust unclamped inductive switching capability up to 1112 mJ.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 27 ns, t_f = 40 ns) and low gate charge (Q_gs = 62 nC, Q_gd = 39 nC). Its 40 V rating targets 12 V–24 V input systems including automotive body electronics and industrial power supplies.

The integrated body diode exhibits low forward voltage (V_SD = 0.82 V typ. at 100 A) and controlled reverse recovery (Q_rr = 289 nC at di/dt = 500 A/μs), enabling reliable synchronous FET operation without external Schottky supplementation in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V bus applications with margin against transients
R_DS(on) max	1.15 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 100 A, critical for high-current output stages
I_D cont	201 A at T_C = 25 °C - Supports high-power motor drivers and server VRMs with minimal paralleling
Q_g	210 nC - Optimized for 100–500 kHz switching with low driver power demand and reduced EMI
E_AS	1112 mJ - Withstands single-pulse inductive energy in hard-switched H-bridges without failure
R_thJC	0.4 °C/W - Allows >300 W power dissipation with moderate heatsinking, simplifying thermal design
V_GS(th)	2.1–3.4 V - Ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

IPB011N04NF2SATMA1 is housed in a surface-mount D²PAK (PG-TO263-3) package with exposed drain tab for enhanced thermal conduction. The drain connects directly to the copper pad on PCB, enabling efficient heat transfer to internal or external heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; low input capacitance (C_iss = 14900 pF) minimizes driver loading
Pin 2 / Tab (Drain)	High-side power terminal	Electrically and thermally connected to large metal tab; primary path for high-current load return
Pin 3 (Source)	Reference and return node	Serves as local ground reference for gate drive; must be routed with low inductance to minimize ringing

Key Features

Feature	Design Value
N-channel normal-level operation	Compatible with standard 5 V or 10 V gate drivers-no level-shifting required in low-side configurations
100% avalanche tested	Guarantees robustness against inductive kickback in motor control and relay driving without derating
Pb-free, RoHS & halogen-free	Complies with IEC61249-2-21 and automotive ELV directives-suitable for Tier-1 automotive modules
Optimized gate charge profile	Q_gd/Q_gs ratio of ~0.62 reduces Miller-induced shoot-through risk in synchronous rectifiers
Low R_DS(on) × Q_g figure-of-merit	241 mΩ·nC - Balances conduction and switching losses for high-frequency DC/DC converters

Applications

Automotive Body Control Module (BCM)

Industrial 48 V DC/DC Converter

Use Scenario: High-current load switching for headlight leveling actuators and seat motor drivers.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge motor driver stage, handling bidirectional 150 A peak currents.

Use Value: 1.15 mΩ R_DS(on) limits I²R loss to <2.6 W at 150 A, reducing thermal stress and eliminating need for active cooling.

Use Scenario: Synchronous rectifier in isolated 48 V-to-12 V buck converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Secondary-side power FET operating at 300 kHz with zero-voltage switching assistance.

Use Value: 233 nC Q_oss enables low capacitive turn-off loss; 0.82 V V_SD ensures <82 mW conduction loss at 100 A freewheeling.

Server VRM High-Side Switch

EV Onboard Charger (OBC) PFC Stage

Use Scenario: High-side switch in multiphase buck regulator supplying CPU core voltage (0.8–1.2 V @ 300 A).

IC Role / Device Role / Timing Role: Fast-switching power FET with tight gate threshold (2.1–3.4 V) for precise PWM timing control.

Use Value: 27 ns turn-on delay and 40 ns fall time support sub-100 ns dead-time optimization, minimizing cross-conduction loss.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC front-end operating at 100 kHz.

IC Role / Device Role / Timing Role: Main switching element handling 200 A peak inductor current with repetitive avalanche stress.

Use Value: 1112 mJ E_AS rating withstands worst-case line surge events without derating or snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.74 mΩ (typ), Q_g = 225 nC, DFN5x6 package (no exposed tab)	Limited thermal dissipation (R_thJC ≈ 1.2 °C/W); unsuitable for >100 A continuous without forced air	Prefer for space-constrained, lower-current (<80 A) applications where PCB area is critical
IXFH40N40P3	400 V rating, R_DS(on) = 40 mΩ, TO-247 package, higher Q_g = 120 nC	Designed for 380 V PFC-not optimized for 12–48 V low-voltage, high-current topologies	Select only when higher voltage blocking (>100 V) or legacy through-hole assembly is mandatory

Compared with STL220N4F7AG and IXFH40N40P3, IPB011N04NF2SATMA1 delivers superior thermal performance (0.4 °C/W vs. ≥1.2 °C/W) and lower conduction loss per ampere in 40 V systems, making it optimal for high-current, thermally constrained automotive and industrial power stages.

Availability

IPB011N04NF2SATMA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial DC/DC converters, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for IPB011N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the StrongIRFET™2 family-engineered specifically for high-current, high-efficiency power conversion in automotive and industrial applications where low R_DS(on), rugged avalanche capability, and thermal reliability are non-negotiable.

FAQ

Is IPB011N04NF2SATMA1 suitable for synchronous rectification in a 48 V-to-5 V buck converter?

Yes. With its 0.82 V typical body diode forward voltage, 233 nC output charge, and 1.15 mΩ R_DS(on), it reduces both conduction and switching losses in secondary-side synchronous rectification. Its 40 V rating provides sufficient margin over 48 V bus transients when used with appropriate clamping.

What is the maximum recommended PCB copper area for thermal performance in still air?

Infineon specifies a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² (single-layer, 70 μm thick) copper area for the drain connection. This configuration achieves R_thJA = 40 °C/W. Larger copper areas or internal layers further reduce thermal resistance but require mechanical validation for solder joint reliability.

Does IPB011N04NF2SATMA1 require gate resistors for safe operation in a half-bridge configuration?

Yes. A gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by parasitic inductance and control dV/dt during switching. The device's 2.5 Ω typical gate resistance and 14900 pF input capacitance make external series resistance essential to prevent oscillation and ensure clean turn-on/turn-off transitions.

Can this MOSFET replace older IRF1405 devices in existing designs?

Yes-with caveats. IPB011N04NF2SATMA1 offers significantly lower R_DS(on) (1.15 mΩ vs. 5.3 mΩ) and higher current rating (201 A vs. 162 A), but its gate threshold (2.1–3.4 V) is lower than IRF1405 (3.5–5.0 V). Gate drive voltage and layout must be verified to avoid unintended turn-on due to noise coupling.

IPB011N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Ta), 201A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.15mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 249µA

Gate Charge (Qg) (Max) @ Vgs:: 315 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 15000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB011N04NF2SATMA1 FAQ

1.How can I place an order for IPB011N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB011N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB011N04NF2SATMA1 reliable?

The price and inventory of IPB011N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB011N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB011N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB011N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB011N04NF2SATMA1?

IPB011N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB011N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB011N04NF2SATMA1?

For technical support, including IPB011N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB011N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPB011N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB011N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB011N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB011N04NF2SATMA1?

All IPB011N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB011N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB011N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB011N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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