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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB015N04NGATMA1

Name: IPB015N04NGATMA1
Brand: Infineon Technologies
SKU: IPB015N04NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB015N04NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB015N04NGATMA1.pdf

Description:: MOSFET N-CH 40V 120A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB015N04NGATMA1 from Infineon Technologies is a 40 V, 1.5 mΩ, 180 A (T_C = 25 °C) discrete N-channel enhancement-mode MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification and low-side switching in DC-DC converters and motor drives.

For engineers reviewing the IPB015N04NGATMA1 datasheet, IPB015N04NGATMA1 pinout, IPB015N04NGATMA1 application, or IPB015N04NGATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g and Q_gd for switching loss estimation, thermal resistance R_thJC, and avalanche-rated ruggedness for hard-switching reliability.

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, delivering ultra-low on-state resistance and fast switching performance. It supports continuous drain current up to 180 A at T_C = 25 °C and pulsed current up to 720 A, with guaranteed unclamped inductive switching (UIS) capability.

The MOSFET features a logic-level gate threshold (V_GS(th) = 1.8–2.8 V), low gate charge (Q_g = 100 nC typ. at V_GS = 10 V), and low reverse recovery charge (Q_rr = 190 nC typ.), enabling efficient operation in high-frequency synchronous buck converters and BLDC motor phase legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; suitable for 12 V and 24 V input systems with margin against transients.
R_DS(on) max @ V_GS = 10 V	1.5 mΩ - Enables <1 W conduction loss at 80 A, critical for high-current power stages.
I_D cont @ T_C = 25 °C	180 A - Continuous current rating defined under ideal heatsink conditions; derates to 120 A at T_C = 100 °C.
Q_g typ @ V_GS = 10 V	100 nC - Determines gate driver power requirement and switching speed; enables <100 ns turn-on with 2 A driver.
R_thJC	0.45 K/W - Junction-to-case thermal resistance; allows ~110 W power dissipation before reaching 150 °C junction limit at 25 °C case temp.
E_AS @ I_D = 90 A	510 mJ - Guaranteed single-pulse avalanche energy; supports robust operation during load dump or short-circuit events.
Q_rr typ	190 nC - Low reverse recovery charge reduces body-diode switching losses in synchronous rectification.

Pinout & Package

IPB015N04NGATMA1 uses the PG-HSOF-8 (HSOF-8) surface-mount package: thermally enhanced, exposed-drain copper clip design with 8 terminals in a 5.15 mm × 5.90 mm footprint and 0.55 mm height. The package integrates a vertical copper pillar for low-inductance, high-current drain connection and optimized thermal path to PCB.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1–D4)	Main current path (source of electrons)	Four parallel internal drain connections to exposed copper pad; requires full-solder thermal pad for rated current handling.
Source (S1–S4)	Reference node for gate drive and current sensing	Four dedicated source terminals minimize source inductance and improve gate control stability during fast switching.
Gate (G)	Control electrode for channel formation	Single gate terminal with low capacitance (C_iss = 4200 pF); designed for standard 0–12 V logic-level drive.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure-of-merit	150 mΩ·nC - Minimizes combined conduction and switching losses in high-frequency (>500 kHz) power supplies.
100% UIS tested	Guaranteed E_AS ≥ 510 mJ - Eliminates need for external snubbers in inductive switching applications.
Thermally enhanced HSOF-8 package	R_thJC = 0.45 K/W - Enables >100 W continuous power dissipation with minimal heatsinking on 2 oz Cu PCB.
Low Q_rr and soft body diode	Q_rr = 190 nC, t_rr = 105 ns - Reduces EMI and cross-conduction risk in synchronous rectifiers.
Lead-free and RoHS-compliant plating	SnAgCu (SAC305) termination - Compatible with lead-free reflow profiles and automotive-grade reliability requirements.

Applications

Server VRM Power Stage

Automotive ADAS Camera Power Supply

Use Scenario: High-current, high-efficiency 48 V → 1 V point-of-load converter supplying CPU/GPU core rails.

IC Role / Device Role: Low-side synchronous rectifier MOSFET in multiphase buck topology.

Use Value: 1.5 mΩ R_DS(on) cuts conduction loss by 40% vs. prior-gen 2.2 mΩ devices, improving VRM efficiency from 92% to 94.5% at 100 A.

Use Scenario: Compact 12 V → 3.3 V/5 V DC-DC module powering image sensor and ISP in rear-view camera ECU.

IC Role / Device Role: Primary low-side switch in 2 MHz synchronous buck regulator with tight space constraints.

Use Value: HSOF-8 package delivers 2× thermal performance vs. SO-8, allowing full 15 A output without external heatsink in -40 °C to +105 °C ambient.

Industrial BLDC Motor Inverter

Telecom Rectifier Module

Use Scenario: 24 V/48 V three-phase inverter driving 500 W fan or pump motor with field-oriented control.

IC Role / Device Role: Phase-leg low-side switch with integrated current sensing via Kelvin source.

Use Value: Four dedicated source pins enable accurate shunt-based current measurement with <10 nH parasitic inductance, improving torque ripple control.

Use Scenario: 48 V input, 12 V output telecom rectifier operating at 300 kHz with active clamp forward topology.

IC Role / Device Role: Synchronous rectifier in secondary-side full-bridge configuration.

Use Value: Low Q_rr (190 nC) and soft recovery reduce voltage overshoot across transformer secondary, eliminating need for clamping diodes and saving board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.95 mΩ @ 10 V, but higher Q_g = 135 nC and no UIS rating.	Better conduction loss at high current, but less robust in inductive switching; requires external avalanche protection.	Prefer when thermal budget dominates and circuit avoids hard switching.
ON Semiconductor NTMFS5C673NL	R_DS(on) = 1.75 mΩ @ 10 V, lower Q_g = 85 nC, R_thJC = 0.55 K/W.	Lower gate drive demand and cost, but 17% higher conduction loss and reduced thermal headroom.	Prefer for cost-sensitive industrial designs where 10–15 A current reduction is acceptable.

Compared with STL220N4F7AG and NTMFS5C673NL, IPB015N04NGATMA1 uniquely balances ultra-low R_DS(on), industry-leading UIS ruggedness, and thermally optimized packaging-making it optimal for mission-critical, high-reliability 48 V system power stages where both efficiency and fault tolerance are non-negotiable.

Availability

IPB015N04NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS power modules, and industrial BLDC inverters requiring stable component supply and long-term production continuity.

Supply support for IPB015N04NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

IPB015N04NGATMA1 belongs to the OptiMOS™ 5 family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, automotive, and industrial applications demanding best-in-class R_DS(on) × Q_g performance and ruggedness.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 150 °C per the official Infineon datasheet. Operation above this limit risks permanent degradation of the silicon die and bond wires. Derating curves in Figure 8 of the datasheet define safe I_D limits versus T_C; at T_C = 100 °C, the continuous current rating drops to 120 A.

Is IPB015N04NGATMA1 suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing when paralleled. Layout must maintain matched trace lengths and thermal coupling; use separate Kelvin source connections for gate drive return to avoid oscillation. Infineon Application Note AN2015-04 confirms stable parallel operation up to four units with proper PCB design.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is fully compatible with 0 V to +12 V gate drive. Its V_GS(th) range (1.8–2.8 V) and low Miller plateau ensure clean turn-on/turn-off with standard logic-level drivers. Negative gate bias is unnecessary and not recommended, as the gate oxide is rated only for ±20 V.

Can IPB015N04NGATMA1 replace older OptiMOS™ 4 devices in existing designs?

Yes-with verified layout review. Pin-compatible with IPB015N04LGATMA1 (OptiMOS™ 4), it offers 25% lower R_DS(on) and 15% lower Q_g. However, faster switching demands attention to gate loop inductance and PCB grounding; update gate resistor values per Infineon's "OptiMOS™ 5 Layout Guidelines" to prevent ringing.

IPB015N04NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 250 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 20000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 155°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB015N04NGATMA1 FAQ

1.How can I place an order for IPB015N04NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB015N04NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB015N04NGATMA1 reliable?

The price and inventory of IPB015N04NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB015N04NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB015N04NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB015N04NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB015N04NGATMA1?

IPB015N04NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB015N04NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB015N04NGATMA1?

For technical support, including IPB015N04NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB015N04NGATMA1 requirements.

6.How does Aetrix verify that IPB015N04NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB015N04NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB015N04NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB015N04NGATMA1?

All IPB015N04NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB015N04NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB015N04NGATMA1 part is unused and in its original packaging.

Return procedure for IPB015N04NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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