Infineon Technologies IPB018N06NF2SATMA1

Overview

IPB018N06NF2SATMA1 from Infineon is an N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, rated for 60 V drain-source voltage, 1.8 mΩ typical R_DS(on) at V_GS = 10 V, and 191 A continuous drain current. It serves as a high-efficiency power switch in DC-DC converters, motor drives, and industrial power supplies where low conduction loss and robust avalanche capability are critical.

For engineers reviewing the IPB018N06NF2SATMA1 datasheet, IPB018N06NF2SATMA1 pinout, IPB018N06NF2SATMA1 application, or IPB018N06NF2SATMA1 equivalent, key selection criteria include its 108 nC total gate charge, 0.65 °C/W junction-to-case thermal resistance, 100% avalanche-tested reliability, and RoHS/halogen-free compliance for high-current switching stages.

Technical Context

This StrongIRFET™2 device uses trench-gate superjunction technology optimized for low R_DS(on) × Q_g figure-of-merit in hard-switched topologies. Its gate threshold voltage (2.1–3.3 V) ensures stable turn-on with standard 5 V or 10 V gate drivers, while the 4.6 V gate plateau supports precise timing control during Miller region transition.

The integrated body diode exhibits 0.90–1.0 V forward voltage at 100 A and 46 ns reverse recovery time under dI/dt = 100 A/μs, enabling synchronous rectification in buck converters without external Schottky diodes. Thermal design leverages the exposed drain tab for direct heatsink mounting via the D²PAK package.

Key Specifications

Pinout & Package

IPB018N06NF2SATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with an exposed drain tab for thermal and electrical connection. The plastic body measures 10.0 mm × 15.8 mm × 4.7 mm, and the drain tab occupies the full underside footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N6F7 and IXTP180N06S2, IPB018N06NF2SATMA1 delivers the lowest R_DS(on) × Q_g product (194 mΩ·nC), best thermal resistance (0.65 °C/W), and highest avalanche energy-making it optimal for space-constrained, high-reliability 48 V power stages.

Availability

IPB018N06NF2SATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and battery management systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB018N06NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the StrongIRFET™2 family, engineered specifically for high-current, high-efficiency switching in industrial and telecom power conversion-emphasizing low R_DS(on), fast switching, and ruggedness under repetitive stress.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C, validated per JEDEC standards. Continuous operation at this limit requires case temperature ≤100 °C (derated per Fig. 2 in datasheet), achievable with ≥6 cm² 70 μm copper area and forced airflow or heatsink attachment to the drain tab.

Is IPB018N06NF2SATMA1 suitable for synchronous rectification?

Yes-it features a fast, low-loss body diode with 46 ns reverse recovery time and 0.90 V forward voltage at 100 A, verified in buck converter evaluations. Its 100% avalanche testing ensures reliability during reverse-biased transitions in high-dI/dt conditions.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is required to control dv/dt and suppress oscillation. Based on 7300 pF C_iss and typical driver output impedance, a 2.2–4.7 Ω series resistor is recommended for 100 A switching, balancing EMI suppression and switching speed per Figure 13 in the datasheet.

How does the 1.8 mΩ R_DS(on) specification translate to real-world conduction loss?

At 100 A and T_j = 100 °C, R_DS(on) rises to ~2.3 mΩ, yielding 23 W conduction loss. With 0.65 °C/W R_thJC, this results in ~15 °C junction-to-case rise-well within thermal budget when mounted on ≥6 cm² copper, confirming suitability for sustained high-current operation.