Infineon Technologies IPB018N10N5ATMA1

Overview

IPB018N10N5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 100 V power stages. It delivers 176 A continuous drain current at T_C=25 °C, features 1.83 mΩ max R_DS(on), 168 nC total gate charge, and operates up to 175 °C junction temperature - deployed in server VRMs, telecom DC-DC converters, and industrial motor drives.

For engineers reviewing the IPB018N10N5ATMA1 datasheet, IPB018N10N5ATMA1 pinout, IPB018N10N5ATMA1 application, or IPB018N10N5ATMA1 equivalent, key selection criteria include low R_DS(on) × Q_G figure-of-merit (FOM), robust avalanche energy rating (979 mJ), thermal resistance (R_thJC = 0.3 °C/W), and D²PAK package suitability for high-current PCB layouts with exposed drain tab.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (2.2–3.8 V) supports standard 10 V gate drive, and the 4.5 V gate plateau enables predictable Miller region control during hard-switching transitions.

The integrated body diode exhibits 0.89 V typical forward voltage at 100 A and 25 °C, with 99 ns reverse recovery time and 287 nC Q_rr, making it suitable for synchronous rectifier topologies where diode conduction loss and recovery loss must be minimized.

Key Specifications

Pinout & Package

IPB018N10N5ATMA1 is housed in PG-TO263-3 (D²PAK) package with exposed drain tab on the underside for thermal and electrical connection. The package features gull-wing leads and is RoHS-compliant and halogen-free per IEC61249-2-21.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Compared with STL220N10F7 and IXFH180N10P, IPB018N10N5ATMA1 offers the best balance of ultra-low R_DS(on), moderate Q_G, and D²PAK thermal performance - ideal for space-constrained, high-current, high-frequency applications where thermal resistance and package size are critical.

Availability

IPB018N10N5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IPB018N10N5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-power-density switching applications in data center, telecom, and industrial power supplies where low R_DS(on) × Q_G and thermal robustness are essential.

FAQ

What is the recommended gate resistor value for IPB018N10N5ATMA1 in a 300 kHz buck converter?

A 1.6 Ω external gate resistor is validated in the datasheet for 100 A switching tests and yields optimal trade-off between switching speed and gate oscillation. For 300 kHz operation, this value limits dV/dt to ~3.5 V/ns and keeps EMI within CISPR-32 Class B limits while maintaining <1.2 µs total switching time. Lower values increase shoot-through risk; higher values raise switching loss disproportionately.

Does IPB018N10N5ATMA1 support 5 V gate drive?

No - its gate threshold voltage range is 2.2–3.8 V, but full enhancement requires ≥6 V V_GS to achieve rated R_DS(on). At 5 V, R_DS(on) degrades to ~2.2 mΩ (max), increasing conduction loss by ~20%. The device is specified for 10 V gate drive; use of 5 V logic-level drivers is not supported for full-current operation.

How is thermal performance affected when the drain tab is not soldered to PCB copper?

Without soldering the exposed drain tab to ≥6 cm² of 70 µm copper, R_thJA rises from 40 °C/W to 62 °C/W. At 100 A, this increases junction temperature by ~85 °C - exceeding 175 °C rating. Mechanical mounting alone is insufficient; reflow-soldered thermal pad is mandatory for rated current operation.

Can IPB018N10N5ATMA1 replace IPB020N10N5 in existing designs?

Yes - both share identical PG-TO263-3 package, pinout, and 100 V rating, but IPB018N10N5ATMA1 has 1.83 mΩ R_DS(on) vs. 2.0 mΩ for IPB020N10N5. Gate charge is nearly identical (168 nC vs. 165 nC), so no gate driver redesign is needed. Conduction loss drops ~8%, enabling higher efficiency or reduced heatsink size in thermally limited layouts.