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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB020N04NGATMA1

Name: IPB020N04NGATMA1
Brand: Infineon Technologies
SKU: IPB020N04NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB020N04NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB020N04NGATMA1.pdf

Description:: MOSFET N-CH 40V 140A TO263-7

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Product details

Overview

IPB020N04NGATMA1 from Infineon Technologies is a 40 V, 200 A (T_C=25°C), 1.8 mΩ (T_J=25°C) N-channel enhancement-mode power MOSFET in PG-HSOF-8 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom POL modules.

For engineers reviewing the IPB020N04NGATMA1 datasheet, IPB020N04NGATMA1 pinout, IPB020N04NGATMA1 application, or IPB020N04NGATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g of 102 nC, thermal resistance R_thJC of 0.7 K/W, and ultra-low gate charge profile for high-frequency switching above 1 MHz.

Technical Context

This device employs Infineon's OptiMOS™ 5 technology with trench-gate superjunction architecture, enabling low conduction loss while maintaining fast switching transitions. It features a fully rated avalanche capability (E_AS = 100 mJ) and is qualified per AEC-Q101 for industrial reliability.

The MOSFET supports logic-level gate drive (V_GS(th) = 1.8–2.8 V) and exhibits tight parametric distribution across production lots, critical for paralleling in high-current power stages. Its integrated Kelvin source connection minimizes gate loop inductance and improves control stability under dI/dt > 100 A/ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V and 48 V input systems
R_DS(on) max @ T_J=100°C	2.4 mΩ - Ensures <1.2 W conduction loss at 200 A continuous current
Q_g	102 nC - Enables efficient 500 kHz–1 MHz operation with standard gate drivers
I_D continuous @ T_C=100°C	130 A - Sustained current rating for thermally constrained PCB layouts
R_thJC	0.7 K/W - Supports direct heatsink mounting for <10°C junction-to-case rise at full load
E_AS	100 mJ - Rated single-pulse avalanche energy for robustness against inductive turn-off stress
V_GS(th)	1.8–2.8 V - Compatible with 3.3 V and 5 V controller outputs without level shifting

Pinout & Package

PG-HSOF-8 (HSOF = High-Side Optimized Flatlead) is a surface-mount, exposed-drain, thermally enhanced package with integrated Kelvin source terminal. Dimensions: 5.0 mm × 6.0 mm × 1.0 mm; copper clip construction enables low-inductance, high-current interconnects.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D1–D4)	Main current path output	Four parallel internal die connections to top-side exposed copper pad for minimal R_DS(on) and thermal resistance
Source (S1, S2)	Power return path	S1 = main source; S2 = Kelvin source - separates high-current return from gate reference to eliminate V_GS error during fast switching
Gate (G)	Control input	Low-impedance gate terminal optimized for <10 ns rise/fall times with 1 Ω series resistance
Source (Kelvin, SK)	Reference sense node	Dedicated low-noise path to gate driver IC feedback, enabling accurate threshold control under >100 A/µs dI/dt

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	5.6 nC/mΩ - Reduces total gate drive power by 35% vs. prior-gen 40 V MOSFETs at 1 MHz
Integrated Kelvin source	Eliminates source inductance impact on gate control - enables stable operation up to 2 MHz
Avalanche-rated (100% tested)	Guarantees safe operation during hard-switching events in non-isolated buck converters
Thermally enhanced clip-bond packaging	0.7 K/W R_thJC allows 130 A continuous current with only 10°C junction rise over case

Applications

Server VRM Phase Legs

Telecom POL Converters

Use Scenario: High-density 48 V–12 V step-down conversion in dual-phase CPU VRMs with 300 A peak load.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in interleaved buck topology operating at 800 kHz.

Use Value: Achieves 95.2% efficiency at 200 A due to 1.8 mΩ R_DS(on) and sub-100 nC Q_g, reducing thermal footprint by 28% vs. legacy devices.

Use Scenario: Point-of-load regulation for ASIC/FPGA power rails in 5G baseband units requiring <10 µs transient response.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter with active current balancing.

Use Value: Kelvin source enables precise current sensing and gate control, supporting <±2% current sharing accuracy across 4 phases.

Industrial Motor Drives

EV Onboard Chargers

Use Scenario: Half-bridge inverter stage for 3 kW servo drives with regenerative braking.

IC Role / Device Role / Timing Role: Low-side switching element handling 150 A RMS with 10 kHz PWM frequency.

Use Value: 100 mJ E_AS rating ensures reliable operation during dynamic braking transients without external snubbers.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW bidirectional OBC AC/DC stage.

IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter operating at 300–500 kHz.

Use Value: Ultra-low Q_gd/Q_g ratio (0.21) minimizes Miller-induced shoot-through risk during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40B215TRPBF	R_DS(on) = 1.95 mΩ @ 10 V but Q_g = 128 nC; no Kelvin source	Lacks dedicated Kelvin source - limits usable frequency to ≤600 kHz in high-dI/dt designs	Prefer when cost sensitivity outweighs switching speed requirements and layout space permits larger gate loop area
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 95 nC; TO-220FP package with higher R_thJC (1.2 K/W)	Through-hole mounting and higher thermal resistance require larger heatsinks and reduce power density	Choose only if through-hole assembly is mandated or if existing thermal infrastructure cannot accommodate HSOF-8 footprint

Compared with IRL40B215TRPBF and STL220N4F7AG, IPB020N04NGATMA1 delivers superior high-frequency efficiency via its Kelvin source and lower Q_g/R_DS(on) ratio, enabling compact, air-cooled 1 MHz+ designs where layout-controlled gate integrity is essential.

Availability

IPB020N04NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IPB020N04NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification standards aligned to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™ 5 40 V product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and telecom infrastructure where power density and thermal performance are critical.

FAQ

What is the maximum recommended gate voltage for IPB020N04NGATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the optimal drive voltage for achieving rated R_DS(on) and minimizing Q_g-related losses. Operation at 12 V is permissible but yields diminishing returns in on-resistance reduction while increasing gate oxide stress and driver power dissipation.

Does IPB020N04NGATMA1 require a negative gate turn-off voltage?

No. The device is designed for 0 V to +10 V gate drive and does not require negative turn-off bias. Its low V_GS(th) (1.8–2.8 V) and low Miller charge ensure clean turn-off with zero-volt gate drive, simplifying driver design and eliminating need for bipolar supplies in most applications.

Can IPB020N04NGATMA1 be paralleled with identical units?

Yes - its positive temperature coefficient of R_DS(on) and matched parametric distribution enable stable current sharing. For best results, use symmetrical PCB layout with individual gate resistors (≤1 Ω), Kelvin source routing, and shared thermal interface to maintain ΔT_J < 5°C between devices.

Is the PG-HSOF-8 package lead-free and RoHS-compliant?

Yes. IPB020N04NGATMA1 uses lead-free solderable terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level MSL-3 (260°C reflow peak). The package contains no intentionally added antimony, beryllium, or halogenated flame retardants.

IPB020N04NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9700 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB020N04NGATMA1 FAQ

1.How can I place an order for IPB020N04NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB020N04NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB020N04NGATMA1 reliable?

The price and inventory of IPB020N04NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB020N04NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB020N04NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB020N04NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB020N04NGATMA1?

IPB020N04NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB020N04NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB020N04NGATMA1?

For technical support, including IPB020N04NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB020N04NGATMA1 requirements.

6.How does Aetrix verify that IPB020N04NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB020N04NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB020N04NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB020N04NGATMA1?

All IPB020N04NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB020N04NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB020N04NGATMA1 part is unused and in its original packaging.

Return procedure for IPB020N04NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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