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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB022N04LGATMA1

Name: IPB022N04LGATMA1
Brand: Infineon Technologies
SKU: IPB022N04LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB022N04LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB022N04LGATMA1.pdf

Description:: MOSFET N-CH 40V 90A D2PAK

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Product details

Overview

IPB022N04LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO263-3 (D²PAK) package, rated for 40 V V_DS, 2.2 mΩ R_DS(on) at V_GS = 10 V, 90 A continuous drain current, and 100% single-pulse avalanche tested - optimized for high-efficiency DC/DC converters and SMPS primary-side switching.

For engineers reviewing the IPB022N04LGATMA1 datasheet, IPB022N04LGATMA1 pinout, IPB022N04LGATMA1 application, or IPB022N04LGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 125–166 nC total gate charge, 1.2–2.0 V gate threshold voltage, and robust 150 mJ single-pulse avalanche energy rating under standardized test conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 40 V technology, featuring a trench-gate structure with optimized cell pitch and reduced specific on-resistance. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V controllers without level-shifting.

Dynamic performance is characterized by C_iss = 9.9–13 nF, C_oss = 2.0–2.7 nF, and fast switching times (t_d(on) = 17 ns, t_r = 9 ns, t_d(off) = 66 ns, t_f = 11 ns), supporting high-frequency operation up to 1 MHz in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - maximum blocking voltage compatible with 12 V and 24 V input rails in industrial and telecom DC/DC stages
R_DS(on) max	2.2 mΩ @ V_GS = 10 V - enables <1.8 W conduction loss at 90 A, critical for high-current POL converters
I_D continuous	90 A @ T_C = 25 °C - supports high-power density designs with minimal parallel devices
Q_g total	125–166 nC - determines gate driver power requirement and switching loss trade-off in hard-switched topologies
E_AS	150 mJ - verified avalanche ruggedness allows reliable operation during transient overvoltage events
V_GS(th)	1.2–2.0 V - ensures full enhancement with standard logic-level microcontrollers and PWM ICs
R_thJC	0.9 K/W - enables thermal design with ≤167 W power dissipation at case temperature of 25 °C

Pinout & Package

IPB022N04LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for enhanced thermal performance. The device has three terminals: Drain (tab), Source (pin 2), and Gate (pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package metal tab	Must be soldered to large copper area (≥6 cm²) for thermal management; serves as high-side switch node in buck or half-bridge configurations
Source (Pin 2)	Reference node for gate drive and current return path	Provides low-inductance source connection; ties to ground or low-side switch source in synchronous rectification
Gate (Pin 1)	Control electrode for channel formation	Requires stable 4.5–10 V drive; sensitive to ESD; layout must minimize gate loop inductance to suppress ringing

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for external gate drivers in low-voltage control systems
Low R_DS(on) × Q_g FOM	~275 Ω·nC - balances conduction and switching losses for optimal efficiency in 300 kHz–1 MHz SMPS
100% avalanche tested	Single-pulse I_AS = 90 A, E_AS = 150 mJ - guarantees ruggedness against inductive kickback in motor drives and converter startup
Pb-free & halogen-free	RoHS-compliant plating per IEC 61249-2-21 - meets environmental compliance for industrial and automotive end equipment

Applications

Server VRMs

Industrial DC/DC Converters

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage (0.8–1.2 V @ >100 A) in data center servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with synchronous rectification.

Use Value: 2.2 mΩ R_DS(on) minimizes conduction loss; 125–166 nC Q_g enables efficient gate driving with integrated DrMOS controllers.

Use Scenario: 48 V-to-12 V isolated or non-isolated step-down converters in PLCs, HMIs, and factory automation power supplies.

IC Role / Device Role / Timing Role: Main switching transistor in high-efficiency, compact 100–300 W DC/DC modules.

Use Value: 40 V rating safely handles 48 V nominal input with margin; 0.9 K/W R_thJC supports forced-air or passive cooling in enclosed enclosures.

Telecom Rectifiers

Motor Drive Half-Bridges

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules delivering 20–50 A at 5–12 V.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck topology, driven by dedicated gate driver IC.

Use Value: Logic-level V_GS(th) ensures clean turn-on with 5 V gate drive; low C_oss (2.0–2.7 nF) reduces dead-time losses and improves light-load efficiency.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor inverters for HVAC fans, pumps, and conveyors.

IC Role / Device Role / Timing Role: High- and low-side switching element with integrated freewheeling diode capability.

Use Value: 150 mJ E_AS withstands inductive flyback during PWM commutation; 90 A I_D supports peak motor currents up to 4× rated load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL40B215PBF	R_DS(on) = 2.1 mΩ @ 10 V; Q_g = 140 nC; TO-220 package	Higher thermal resistance (R_thJC ≈ 1.2 K/W); requires heatsink mounting	Preferred where through-hole assembly or legacy footprint compatibility is required
STL220N4F7AG	R_DS(on) = 2.0 mΩ @ 10 V; Q_g = 135 nC; PowerFLAT 8x8 HV package	Exposed drain on bottom side only; no tab for top-side thermal interface	Better suited for ultra-thin PCBs with limited height budget but less accessible for thermal vias

Compared with IRL40B215PBF and STL220N4F7AG, IPB022N04LGATMA1 offers superior thermal coupling via its D²PAK drain tab, lower gate charge variability across temperature, and JEDEC-qualified reliability for long-life industrial deployments - making it optimal for space-constrained, high-reliability SMPS designs.

Availability

IPB022N04LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifiers requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for IPB022N04LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IPB022N04LGATMA1 belongs to the OptiMOS™ 40 V product line, engineered specifically for high-efficiency, high-current switching in next-generation power supplies and motor control systems where low R_DS(on), fast switching, and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The IPB022N04LGATMA1 has a specified operating junction temperature range of –55 °C to +175 °C. For continuous operation, thermal design must ensure T_j remains below 175 °C under worst-case ambient and power dissipation conditions, using the 0.9 K/W R_thJC value and measured case temperature.

Is this MOSFET suitable for synchronous rectification in a 48 V input buck converter?

Yes - its logic-level V_GS(th) (1.2–2.0 V), low R_DS(on) (2.2 mΩ), and fast reverse recovery (Q_rr = 95 nC) make it well-suited for low-side synchronous rectification in 48 V-to-12 V or 48 V-to-5 V buck converters operating up to 500 kHz.

Does the device require a gate resistor for stability in hard-switched applications?

Yes - a gate resistor (typically 2.2–10 Ω) is recommended to dampen gate oscillation and control dV/dt during turn-on/turn-off. The 1.9 Ω internal gate resistance and 125–166 nC Q_g necessitate careful layout and external R_G selection to balance switching speed and EMI.

How does the avalanche rating compare to competing 40 V MOSFETs?

With 150 mJ single-pulse E_AS at I_D = 90 A, IPB022N04LGATMA1 exceeds typical industry benchmarks (e.g., 80–120 mJ) for similarly rated devices, reflecting Infineon's process-level avalanche qualification per JEDEC JESD22-A110, ensuring robustness in unclamped inductive switching.

IPB022N04LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 166 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB022N04LGATMA1 FAQ

1.How can I place an order for IPB022N04LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB022N04LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB022N04LGATMA1 reliable?

The price and inventory of IPB022N04LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB022N04LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB022N04LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB022N04LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB022N04LGATMA1?

IPB022N04LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB022N04LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB022N04LGATMA1?

For technical support, including IPB022N04LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB022N04LGATMA1 requirements.

6.How does Aetrix verify that IPB022N04LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB022N04LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB022N04LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB022N04LGATMA1?

All IPB022N04LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB022N04LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB022N04LGATMA1 part is unused and in its original packaging.

Return procedure for IPB022N04LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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