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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB023N04NF2SATMA1

Name: IPB023N04NF2SATMA1
Brand: Infineon Technologies
SKU: IPB023N04NF2SATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB023N04NF2SATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB023N04NF2SATMA1.pdf

Description:: TRENCH <= 40V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB023N04NF2SATMA1 from Infineon is a 40 V, 122 A N-channel enhancement-mode MOSFET in D²PAK (PG-TO263-3) package, featuring 2.35 mΩ R_DS(on) at V_GS = 10 V, 76 nC total output charge (Q_oss), and 100% avalanche tested for robustness in high-current switching applications such as DC-DC converters and motor drives.

For engineers reviewing the IPB023N04NF2SATMA1 datasheet, IPB023N04NF2SATMA1 pinout, IPB023N04NF2SATMA1 application, or IPB023N04NF2SATMA1 equivalent, key selection criteria include R_DS(on) at 10 V and 6 V gate drive, Q_g and Q_oss trade-offs for hard-switching efficiency, thermal resistance (R_thJC = 0.95 °C/W), and avalanche energy rating (E_AS = 167 mJ).

Technical Context

This StrongIRFET™2 device uses Infineon's optimized trench-gate process for low conduction loss and fast switching. It supports synchronous rectification with Q_g(sync) = 61 nC at V_GS = 0.1 V and exhibits low reverse recovery charge (Q_rr = 45–122 nC) under dI/dt = 100–500 A/μs conditions.

The MOSFET operates with V_GS(th) = 2.1–3.4 V, enabling reliable turn-on with standard 5 V logic-level drivers. Its 175 °C maximum junction temperature and 0.95 °C/W junction-to-case thermal resistance support high-power density designs on FR4 PCBs with 6 cm² copper drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input systems
R_DS(on) max	2.35 mΩ at V_GS = 10 V, I_D = 70 A - Enables <1.7 W conduction loss at 120 A continuous
I_D cont	122 A at T_C = 25 °C - Supports high-current power stages without paralleling
Q_oss	76 nC at V_DS = 20 V - Directly impacts turn-off loss in hard-switched topologies
E_AS	167 mJ - Confirmed single-pulse avalanche capability for inductive load protection
R_thJC	0.95 °C/W - Enables >150 W power dissipation with moderate heatsinking
V_GS(th)	2.1–3.4 V - Ensures full enhancement with 3.3 V or 5 V gate drivers

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, isolated tab (drain-connected), thermally enhanced for PCB heat transfer via large copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring <3 Ω external gate resistor to damp ringing
Pin 2 (Drain) + Tab	High-current power output	Electrically and thermally connected to exposed copper tab; must be routed to ground plane or heatsink
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and main current; critical for stable switching waveform integrity

Key Features

Feature	Design Value
N-channel normal-level operation	Turns fully on with standard 5 V microcontroller GPIO or gate driver outputs
100% avalanche tested	Guarantees ruggedness against inductive switching transients without derating
Pb-free, halogen-free	Complies with RoHS and IEC61249-2-21 for environmentally regulated industrial and automotive use
Optimized for wide-range applications	Validated performance from 25 °C to 175 °C junction temperature across multiple load profiles

Applications

DC-DC Buck Converter

BLDC Motor Inverter

Use Scenario: High-efficiency 12 V–48 V input, 3–20 A output synchronous buck regulator in telecom power supplies.

IC Role / Device Role / Timing Role: Primary high-side switch handling continuous 122 A peak current with minimal conduction loss.

Use Value: 2.35 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 3.5 mΩ devices at 100 A, improving full-load efficiency to >96%.

Use Scenario: 3-phase inverter stage driving 500 W–2 kW brushless DC motors in e-bikes and power tools.

IC Role / Device Role / Timing Role: Low-side switching element with fast t_f = 15 ns and low Q_oss for reduced turn-off loss at 20–50 kHz PWM.

Use Value: 76 nC Q_oss enables lower switching loss than 100+ nC alternatives, extending battery runtime by up to 8% in 48 V systems.

Automotive Body Control Module

Industrial LED Driver

Use Scenario: Load switching for headlights, HVAC actuators, and solenoid valves in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Robust power switch with 167 mJ E_AS rating to absorb inductive kickback from relay coils and motors.

Use Value: Eliminates need for external flyback diodes in most BCM loads, reducing BOM count and board space by 20%.

Use Scenario: Constant-current switching stage in high-brightness LED drivers for street lighting and signage.

IC Role / Device Role / Timing Role: High-current PWM switch operating at 1–5 kHz with low R_DS(on) to minimize thermal rise in sealed enclosures.

Use Value: 0.95 °C/W R_thJC allows direct mounting to aluminum heatsink, maintaining <90 °C junction temp at 100 A LED string current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 82 nC, TO-263 package	Higher gate charge increases switching loss in >100 kHz designs	Prefer when lowest R_DS(on) dominates over Q_g in low-frequency, high-current applications
IXTP130N04T2	R_DS(on) = 3.0 mΩ @ 10 V, Q_g = 58 nC, TO-220 package	Higher R_DS(on) raises conduction loss; through-hole mounting limits power density	Choose for cost-sensitive, lower-current (<80 A) designs where thermal margin permits higher R_DS(on)

Compared with STL220N4F7AG and IXTP130N04T2, IPB023N04NF2SATMA1 delivers optimal balance of ultra-low R_DS(on), moderate Q_g, and surface-mount thermal performance-making it preferred for compact, high-efficiency 40 V power stages where both conduction and switching losses must be minimized.

Availability

IPB023N04NF2SATMA1 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor inverters, automotive body control modules, and industrial LED drivers requiring stable component supply and long-term production continuity.

Supply support for IPB023N04NF2SATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the StrongIRFET™2 family-designed specifically for high-current, high-reliability power switching in automotive, industrial, and renewable energy systems where avalanche ruggedness and thermal stability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 94 A at T_C = 100 °C, de-rated from 122 A at 25 °C using the thermal resistance curve in Diagram 2. This value assumes proper PCB copper area (6 cm²) and still-air cooling per JEDEC JESD51-2.

Does IPB023N04NF2SATMA1 support gate drive from 3.3 V microcontrollers?

No-it requires ≥4.3 V gate plateau voltage (V_GS,plateau) for full enhancement. At 3.3 V, R_DS(on) rises sharply above 10 mΩ, causing excessive conduction loss; a dedicated 5 V or 10 V gate driver is mandatory for rated performance.

Is the drain tab electrically isolated from the package leads?

No-the drain (Pin 2) and the exposed copper tab are internally shorted and electrically identical. The tab must be connected to the same potential as Pin 2 and cannot serve as an isolated thermal pad without additional insulation.

What is the recommended minimum gate resistor for hard-switching at 50 kHz?

A 2.2 Ω to 4.7 Ω non-inductive gate resistor is recommended to limit peak gate current while damping oscillation. This range balances t_d(on)/t_r ≈ 31 ns and t_d(off)/t_f ≈ 50 ns per datasheet timing specs under 70 A load and 1.6 Ω source impedance.

IPB023N04NF2SATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: StrongIRFET™2

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Ta), 122A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.35mOhm @ 70A, 10V

Vgs(th) (Max) @ Id:: 3.4V @ 81µA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB023N04NF2SATMA1 FAQ

1.How can I place an order for IPB023N04NF2SATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB023N04NF2SATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB023N04NF2SATMA1 reliable?

The price and inventory of IPB023N04NF2SATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB023N04NF2SATMA1 is usually 5 days.

3.What payment methods are accepted for IPB023N04NF2SATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB023N04NF2SATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB023N04NF2SATMA1?

IPB023N04NF2SATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB023N04NF2SATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB023N04NF2SATMA1?

For technical support, including IPB023N04NF2SATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB023N04NF2SATMA1 requirements.

6.How does Aetrix verify that IPB023N04NF2SATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB023N04NF2SATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB023N04NF2SATMA1 meets industry standards.

7.What is the process for return or replacement of IPB023N04NF2SATMA1?

All IPB023N04NF2SATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB023N04NF2SATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB023N04NF2SATMA1 part is unused and in its original packaging.

Return procedure for IPB023N04NF2SATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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