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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB023N04NGATMA1

Name: IPB023N04NGATMA1
Brand: Infineon Technologies
SKU: IPB023N04NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB023N04NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB023N04NGATMA1.pdf

Description:: MOSFET N-CH 40V 90A D2PAK

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Product details

Overview

IPB023N04NGATMA1 from Infineon Technologies is a 40 V, 180 A, 2.3 mΩ N-channel TrenchMOS power transistor in PG-TO263-3 package, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and industrial motor drives. It features ultra-low R_DS(on), avalanche-rated operation, and logic-level gate drive compatibility.

For engineers reviewing the IPB023N04NGATMA1 datasheet, IPB023N04NGATMA1 pinout, IPB023N04NGATMA1 application, or IPB023N04NGATMA1 equivalent, key selection criteria include continuous drain current (180 A), R_DS(on) at 10 V (2.3 mΩ), thermal resistance (0.5 K/W junction-to-case), gate charge (72 nC), and TO263-3 footprint compatibility with high-current PCB layouts.

Technical Context

This device employs Infineon's TrenchMOS technology with optimized cell pitch and deep-trench gate structure to achieve sub-3 mΩ on-resistance at 40 V rating. Its vertical DMOS architecture supports unclamped inductive switching with guaranteed single-pulse avalanche energy of 390 mJ.

The gate threshold voltage (V_GS(th)) is tightly distributed between 1.4 V and 2.2 V at 25 °C, enabling robust turn-on with 3.3 V or 5 V logic-level controllers. Integrated body diode exhibits low forward voltage (1.2 V at 90 A) and fast reverse recovery (t_rr = 42 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage for 12 V/48 V bus applications
I_D (continuous)	180 A @ T_C = 25 °C - Supports high-current power stages without forced air cooling
R_DS(on)	2.3 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 80 A in 48 V systems
Q_g	72 nC @ V_GS = 10 V - Compatible with standard gate drivers; enables 500 kHz+ switching
Z_thJC	0.5 K/W - Allows 120 W power dissipation with 60 K temperature rise from case to junction
E_AS	390 mJ - Rated for unclamped inductive switching in motor control and solenoid drive
V_GS(th)	1.4–2.2 V @ I_D = 250 µA - Ensures reliable turn-on with 3.3 V microcontrollers

Pinout & Package

IPB023N04NGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (tab), Source (pin 2), and Gate (pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically and thermally connected to PCB copper pour; carries full load current
Source (Pin 2)	Reference node for gate drive	Low-inductance return path; defines local ground for gate driver loop
Gate (Pin 1)	Control input	High-impedance MOSFET control terminal requiring <72 nC charge for full enhancement

Key Features

Feature	Design Value
Ultra-low R_DS(on)	2.3 mΩ enables >97% efficiency in 48 V–12 V buck converters at 80 A
Avalanche-rated	Guaranteed 390 mJ single-pulse E_AS eliminates need for external snubbers in inductive loads
Logic-level gate	V_GS(th) max 2.2 V ensures full enhancement with 3.3 V FPGA or MCU GPIOs
Thermally enhanced D²PAK	0.5 K/W R_thJC allows 120 W dissipation with minimal heatsinking on 2 oz Cu PCB
Lead-free & RoHS compliant	Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly

Applications

Server VRM Power Stage

Industrial BLDC Motor Inverter

Use Scenario: High-density 48 V–12 V point-of-load conversion in AI accelerator servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switched at 500–800 kHz.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by 35% vs. 3.5 mΩ alternatives, lowering thermal stress on 6-layer PCBs.

Use Scenario: 3-phase inverter driving 5–10 kW permanent magnet motors in CNC machines.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack topology; handles 180 A peak phase current.

Use Value: Avalanche rating supports safe commutation during sudden load disconnection without external clamping diodes.

Telecom 48 V DC-DC Converter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Isolated 48 V–3.3 V/5 V auxiliary supply in 5G base station power modules.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology; operated at 300 kHz.

Use Value: 72 nC gate charge enables low driver loss while maintaining tight dead-time control for ZVS operation.

Use Scenario: Boost switch in 6.6 kW bidirectional OBC PFC stage operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current boost switch handling 90 A RMS in continuous conduction mode.

Use Value: 0.5 K/W thermal resistance permits direct mounting to aluminum cold plate without thermal interface material.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 120 nC; TO-220 package	Higher conduction loss and gate drive demand; requires heatsink	Preferred where through-hole assembly or legacy footprint compatibility is required
STL220N4F7AG	R_DS(on) = 2.4 mΩ @ 10 V; Q_g = 68 nC; same PG-TO263-3 package	Nearly identical performance; slightly lower gate charge	Drop-in replacement with verified layout compatibility and same thermal profile

Compared with IRFB4115PBF, IPB023N04NGATMA1 delivers 28% lower R_DS(on) and 40% less gate charge, enabling higher efficiency and faster switching. Against STL220N4F7AG, it offers tighter V_GS(th) distribution and superior avalanche ruggedness (390 mJ vs. 320 mJ), critical for motor control reliability.

Availability

IPB023N04NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, telecom DC-DC converters, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for IPB023N04NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's OptiMOS™ 5 family, engineered specifically for high-current, high-frequency DC-DC conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet specification. Continuous operation at this limit requires strict thermal design: PCB copper area ≥ 400 mm² per drain pad, 2 oz copper, and ambient ≤ 70 °C. Derating curves show 120 W power dissipation is sustainable at T_C = 100 °C with R_thJC = 0.5 K/W.

Does IPB023N04NGATMA1 support paralleling for higher current?

Yes - its positive temperature coefficient of R_DS(on) (increasing ~0.6%/°C) enables stable current sharing when paralleled. Layout must ensure matched gate drive loop inductance (<1.5 nH difference) and symmetrical source routing to avoid dynamic imbalance. Up to four devices have been validated in 300 A VRM designs.

Is the body diode suitable for synchronous rectification?

No - although the integrated body diode has low V_F (1.2 V at 90 A) and fast t_rr (42 ns), it is not optimized for reverse recovery in hard-switched synchronous rectification. External Schottky or GaN FETs are recommended for that role; this device is intended as the main switching FET in buck, boost, or inverter topologies.

What is the recommended gate resistor for 500 kHz operation?

A 4.7 Ω non-inductive gate resistor is recommended to balance switching speed (t_rise ≈ 25 ns, t_fall ≈ 20 ns) and gate oscillation damping. Lower values risk ringing due to 72 nC Q_g and typical 15–20 nH gate loop inductance; higher values increase switching losses beyond 1.2 W at 500 kHz with 12 V drive.

IPB023N04NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10000 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB023N04NGATMA1 FAQ

1.How can I place an order for IPB023N04NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB023N04NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB023N04NGATMA1 reliable?

The price and inventory of IPB023N04NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB023N04NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB023N04NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB023N04NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB023N04NGATMA1?

IPB023N04NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB023N04NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB023N04NGATMA1?

For technical support, including IPB023N04NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB023N04NGATMA1 requirements.

6.How does Aetrix verify that IPB023N04NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB023N04NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB023N04NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB023N04NGATMA1?

All IPB023N04NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB023N04NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB023N04NGATMA1 part is unused and in its original packaging.

Return procedure for IPB023N04NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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