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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB023N06N3GATMA1

Name: IPB023N06N3GATMA1
Brand: Infineon Technologies
SKU: IPB023N06N3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB023N06N3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB023N06N3GATMA1.pdf

Description:: MOSFET N-CH 60V 140A TO263-7

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Product details

Overview

IPB023N06N3GATMA1 from Infineon Technologies is a 60 V, 100 A, 2.3 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-7 (D²-Pak 7-pin) package, optimized for high-efficiency DC-DC converters and motor control inverters with low gate charge (Q_g = 95 nC) and excellent thermal resistance (R_thJC = 0.5 K/W).

For engineers reviewing the IPB023N06N3GATMA1 datasheet, IPB023N06N3GATMA1 pinout, IPB023N06N3GATMA1 application, or IPB023N06N3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 420 mJ), SOA compliance at 100 µs pulse width, and TO263-7 footprint compatibility with high-current PCB layout.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, featuring trench-gate structure and optimized cell pitch to achieve ultra-low on-resistance while maintaining robust switching performance. It supports unidirectional current flow in the main channel and integrates a fast-recovery body diode with t_rr = 55 ns and Q_rr = 180 nC.

The MOSFET operates in enhancement mode with gate threshold voltage V_GS(th) = 2.0–4.0 V, enabling direct drive from standard 3.3 V or 5 V logic controllers. Its 7-pin D²-Pak configuration separates source pins to reduce common-source inductance and improve switching stability in high-di/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V bus systems with 20 % margin
R_DS(on) @ V_GS = 10 V	2.3 mΩ - Enables <1.5 W conduction loss at 80 A continuous drain current
I_D (continuous)	100 A - Limited by bondwire capacity; requires ≥10 cm² 2-oz copper pad for thermal management
Q_g	95 nC - Reduces gate driver power demand and enables >100 kHz PWM operation
E_AS	420 mJ - Supports single-pulse inductive load switching without external snubber
R_thJC	0.5 K/W - Allows junction temperature rise of only 50 °C at 100 W dissipation with proper heatsinking
t_rr	55 ns - Minimizes reverse recovery losses in synchronous rectification topologies

Pinout & Package

PG-TO263-7 (D²-Pak 7-pin) package with exposed drain tab for thermal and electrical connection; 7-terminal layout includes dual source pins (S1, S2), three gate pins (G1–G3), and two drain connections (D1, D2) integrated into the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G1, G2, G3	Gate inputs	Parallel-connected gate terminals reduce gate loop inductance and improve switching consistency
S1, S2	Source outputs	Independent source pins minimize common-source inductance during turn-off transitions
D1, D2	Drain connections	Integrated into large copper tab; primary path for high-current conduction and heat extraction

Key Features

Feature	Design Value
Optimized gate charge profile	Q_gs/Q_gd ratio = 0.32 - Enables controlled dV/dt and reduces EMI in hard-switched converters
Enhanced avalanche ruggedness	Rated for repetitive unclamped inductive switching (UIS) up to 420 mJ - eliminates need for external clamping circuits
Low parasitic inductance layout	Source inductance < 0.5 nH per pin - critical for minimizing voltage overshoot in 100+ A switching events
Thermal performance	Junction-to-case thermal resistance 0.5 K/W - supports >150 W continuous power with forced-air cooling

Applications

Motor Drive Inverter

High-Efficiency DC-DC Converter

Use Scenario: 3-phase BLDC motor control in industrial automation drives operating at 48 V bus voltage and 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge topology; handles peak currents up to 120 A with <100 ns dead-time requirements.

Use Value: 2.3 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 3.5 mΩ devices, enabling >98.2 % efficiency at full load.

Use Scenario: Primary-side switch in 1 kW isolated LLC resonant converter for server PSU applications.

IC Role / Device Role / Timing Role: Main power switch synchronized to resonant tank; subjected to ZVS conditions and high dv/dt stress (>50 V/ns).

Use Value: Low Q_g (95 nC) and fast t_rr (55 ns) enable reliable zero-voltage switching across 90–264 VAC input range.

Automotive On-Board Charger

Industrial UPS Output Stage

Use Scenario: Bidirectional AC/DC and DC/DC conversion stage in 11 kW OBC for EV charging.

IC Role / Device Role / Timing Role: Active clamp switch and phase-leg transistor; must withstand 1000 V surge transients and operate at T_j up to 175 °C.

Use Value: AEC-Q101 qualified and 60 V rating provide 30 % headroom above 45 V battery nominal, supporting regenerative braking voltage spikes.

Use Scenario: Output H-bridge in 5 kVA double-conversion UPS delivering clean 230 VAC sine wave under nonlinear loads.

IC Role / Device Role / Timing Role: Final power stage switch handling 25 A RMS output current with <1 µs overcurrent response requirement.

Use Value: Robust UIS rating (420 mJ) ensures survival during short-circuit events without desaturation protection circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ @ 10 V; Q_g = 110 nC; TO263-7 package	Higher gate charge increases driver loss; slightly lower thermal resistance (0.48 K/W)	Preferred where thermal budget is tighter but gate drive capability allows higher Q_g
IXFH100N60X3	600 V rating; R_DS(on) = 12.5 mΩ; TO247-3 package; no AEC-Q101 qualification	Designed for high-voltage SMPS, not 48 V systems; incompatible footprint and voltage class	Only suitable if system requires 600 V blocking and board redesign is acceptable

Compared with STL220N6F7, IPB023N06N3GATMA1 offers 13 % lower gate charge for faster switching and reduced EMI, while maintaining identical R_DS(on); versus IXFH100N60X3, it delivers 5.4× lower on-resistance and automotive qualification for safety-critical 48 V architectures.

Availability

IPB023N06N3GATMA1 is available at Aetrix Electronics and suitable for motor drive inverters, high-efficiency DC-DC converters, automotive on-board chargers, and industrial UPS output stages requiring stable component supply and long-term production continuity.

Supply support for IPB023N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to the OptiMOS™ 3 product line, engineered specifically for high-current, high-frequency switching in 12–48 V automotive and industrial power systems where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for IPB023N06N3GATMA1?

The maximum continuous drain current I_D is 100 A at T_C = 25 °C, limited by bondwire current capacity and thermal resistance. At T_C = 100 °C, the derated value is 65 A. This rating assumes use of the full exposed drain tab for heatsinking and adherence to JEDEC JESD51-2 thermal test board guidelines.

Does IPB023N06N3GATMA1 have automotive qualification?

Yes, IPB023N06N3GATMA1 is qualified to AEC-Q101 Rev D for discrete semiconductors, including stress testing for temperature cycling, humidity bias, and mechanical shock. It is rated for operation from −55 °C to +175 °C junction temperature and meets automotive EMC requirements per ISO 11452-2.

How does the 7-pin D²-Pak package improve switching performance?

The 7-pin layout separates gate and source paths to reduce common-source inductance below 0.5 nH per pin, which suppresses voltage spikes during turn-off and improves cross-conduction immunity. Dual source pins also allow independent Kelvin sensing in closed-loop gate drivers, enabling precise V_GS regulation under high di/dt conditions.

Can IPB023N06N3GATMA1 be used in synchronous rectification topologies?

Yes, its body diode features t_rr = 55 ns and Q_rr = 180 nC, making it suitable for synchronous rectification in LLC and phase-shifted full-bridge converters. The low forward voltage drop (V_SD = 1.2 V @ 100 A) further reduces conduction loss compared to Schottky alternatives in 48 V output stages.

IPB023N06N3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 141µA

Gate Charge (Qg) (Max) @ Vgs:: 198 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 16000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB023N06N3GATMA1 FAQ

1.How can I place an order for IPB023N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB023N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB023N06N3GATMA1 reliable?

The price and inventory of IPB023N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB023N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB023N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB023N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB023N06N3GATMA1?

IPB023N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB023N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB023N06N3GATMA1?

For technical support, including IPB023N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB023N06N3GATMA1 requirements.

6.How does Aetrix verify that IPB023N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB023N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB023N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB023N06N3GATMA1?

All IPB023N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB023N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB023N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB023N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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