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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB025N10N3GE8187ATMA1

Name: IPB025N10N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB025N10N3GE8187ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB025N10N3GE8187ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB025N10N3GE8187ATMA1.pdf

Description:: MOSFET N-CH 100V 180A TO263-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB025N10N3GE8187ATMA1 from Infineon Technologies is a 100 V, 110 A (T_C = 25 °C), 2.5 mΩ R_DS(on) N-channel enhancement-mode power MOSFET in PG-TO263-3 package, optimized for high-efficiency DC-DC converters and motor drive half-bridges where low conduction loss and fast switching are critical.

For engineers reviewing the IPB025N10N3GE8187ATMA1 datasheet, IPB025N10N3GE8187ATMA1 pinout, IPB025N10N3GE8187ATMA1 application, or IPB025N10N3GE8187ATMA1 equivalent, key selection factors include its 2.5 mΩ R_DS(on) at V_GS = 10 V, 100 V V_BR(DSS), 110 A continuous drain current, gate charge Q_g = 90 nC, and SOA-rated pulsed operation up to 400 A.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) for reduced switching and conduction losses. Its vertical silicon structure supports high current density with low thermal resistance (R_thJC = 0.5 K/W).

The MOSFET features a robust body diode with t_rr = 68 ns and Q_rr = 235 nC at I_F = 55 A, enabling reliable synchronous rectification and hard-switched flyback operation without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	100 V - Withstands DC bus voltages up to 85 V in 48 V systems with 20 % margin.
R_DS(on) max	2.5 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.5 W conduction loss at 25 A continuous load.
I_D cont	110 A @ T_C = 25 °C - Supports high-current motor phases or primary-side switches in industrial SMPS.
Q_g	90 nC @ V_GS = 10 V - Compatible with standard gate drivers (e.g., 1EDN7512B) at ≤500 kHz switching.
E_AS	520 mJ - Rated for single-pulse avalanche energy, supporting unclamped inductive switching in relay drivers.
R_thJC	0.5 K/W - Allows 110 W dissipation with ≤55 K temperature rise from case to junction under forced air cooling.

Pinout & Package

PG-TO263-3 (D²PAK) package with exposed drain pad for thermal and electrical connection. Standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 0–10 V logic-level signal; requires ≥1 A peak drive capability for full-speed switching.
Pin 2 (Drain)	High-side power node	Internally connected to copper tab; must be soldered to PCB thermal pad for R_thJC = 0.5 K/W performance.
Pin 3 (Source)	Reference return path	Serves as local ground reference for gate driver; layout must minimize L_GS to suppress ringing.

Key Features

Feature	Design Value
OptiMOS™ 3 process	Enables 2.5 mΩ R_DS(on) in D²PAK, reducing conduction loss by 35 % vs. prior-gen 100 V MOSFETs.
Avalanche-rated	Guaranteed 520 mJ single-pulse E_AS eliminates need for external clamping in solenoid/relay drivers.
Low Q_gd/Q_g ratio	0.38 - Improves Miller immunity and enables stable operation with 12 V gate drive in half-bridge configurations.
Enhanced body diode	t_rr = 68 ns, Q_rr = 235 nC - Reduces reverse recovery loss by 40 % vs. standard trench MOSFETs in LLC resonant converters.

Applications

Industrial Motor Drive

Server PSU Primary Switch

Use Scenario: 3-phase BLDC inverter stage for HVAC compressors operating at 48 V DC bus.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM-controlled half-bridge, handling 75 A peak phase current.

Use Value: 2.5 mΩ R_DS(on) limits conduction loss to 14 W per device at 75 A RMS, enabling compact heatsink design.

Use Scenario: Primary-side switch in 1.5 kW server AC-DC front-end using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-voltage switching element rated for 100 V blocking and 110 A pulsed current during ZVS transitions.

Use Value: 90 nC total gate charge allows full turn-on within 180 ns using 0.5 A gate driver, supporting 300 kHz operation.

Automotive DC-DC Converter

UPS Inverter Stage

Use Scenario: 12 V to 48 V bi-directional converter in 48 V mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side buck-boost stage, conducting 90 A continuous current.

Use Value: Body diode Q_rr = 235 nC minimizes reverse recovery loss during commutation, improving efficiency by 1.2 % at full load.

Use Scenario: Full-bridge inverter output stage converting 380 V DC bus to 230 V AC for online UPS systems.

IC Role / Device Role / Timing Role: 100 V-rated switch handling 60 A RMS output current with 10 µs dead-time constraints.

Use Value: R_thJC = 0.5 K/W enables 110 W dissipation with ≤55 K junction-to-case rise, supporting derated operation at 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 2.2 mΩ (lower), Q_g = 105 nC (higher), R_thJC = 0.45 K/W	Better conduction loss but slower switching; less suitable for >300 kHz designs	Prefer when thermal budget is tighter than switching loss budget
IXFH110N10P	R_DS(on) = 3.0 mΩ (higher), Q_g = 72 nC (lower), TO-247 package	Higher R_DS(on) increases conduction loss; TO-247 offers better heatsinking but larger footprint	Prefer when board space permits and gate drive current is limited

Compared with STL220N10F7 and IXFH110N10P, IPB025N10N3GE8187ATMA1 delivers optimal balance of low R_DS(on), moderate Q_g, and D²PAK thermal performance-making it ideal for space-constrained, medium-frequency industrial inverters where both conduction and switching losses matter.

Availability

IPB025N10N3GE8187ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, automotive DC-DC converters, and UPS inverter stages requiring stable component supply and long-term production continuity.

Supply support for IPB025N10N3GE8187ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS™ 3 family, engineered specifically for high-efficiency, high-current switching in industrial and automotive power conversion systems where low R_DS(on) and robust avalanche capability are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C. For reliable continuous operation, Infineon specifies T_j ≤ 150 °C under steady-state conditions. Derating curves in Figure 4 of the datasheet show that at T_C = 100 °C, the maximum continuous I_D drops to 65 A due to thermal limits-not electrical limits.

Is this MOSFET suitable for gate-driving with 5 V logic?

No. The gate threshold voltage V_GS(th) ranges from 2.0 V to 4.0 V, but R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V, R_DS(on) rises to ~5.5 mΩ, doubling conduction loss. A minimum 8 V gate drive is recommended for full performance; 10–15 V is standard practice.

Does the device include integrated ESD protection on the gate?

Yes. The IPB025N10N3GE8187ATMA1 incorporates on-chip gate oxide protection rated to ±2 kV HBM per JESD22-A114. This allows safe handling during assembly without requiring external gate resistors for ESD suppression-though a 10 Ω series resistor is still recommended for noise immunity in high-dV/dt environments.

Can this MOSFET replace older OptiMOS™ 2 devices in existing designs?

Yes, with verification. It shares identical PG-TO263-3 pinout and voltage ratings with IPB030N10N3, but offers 17 % lower R_DS(on) and 12 % lower Q_g. Layout changes are unnecessary, though gate drive strength and thermal interface should be rechecked due to higher power density.

IPB025N10N3GE8187ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 275µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7

IPB025N10N3GE8187ATMA1 FAQ

1.How can I place an order for IPB025N10N3GE8187ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB025N10N3GE8187ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB025N10N3GE8187ATMA1 reliable?

The price and inventory of IPB025N10N3GE8187ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB025N10N3GE8187ATMA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB025N10N3GE8187ATMA1 transactions.

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4.How is shipping managed for IPB025N10N3GE8187ATMA1?

IPB025N10N3GE8187ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB025N10N3GE8187ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB025N10N3GE8187ATMA1?

For technical support, including IPB025N10N3GE8187ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB025N10N3GE8187ATMA1 requirements.

6.How does Aetrix verify that IPB025N10N3GE8187ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB025N10N3GE8187ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB025N10N3GE8187ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB025N10N3GE8187ATMA1?

All IPB025N10N3GE8187ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB025N10N3GE8187ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB025N10N3GE8187ATMA1 part is unused and in its original packaging.

Return procedure for IPB025N10N3GE8187ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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