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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB029N06N3GE8187ATMA1

Name: IPB029N06N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB029N06N3GE8187ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB029N06N3GE8187ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB029N06N3GE8187ATMA1.pdf

Description:: MOSFET N-CH 60V 120A D2PAK

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Product details

Overview

IPB029N06N3GE8187ATMA1 from Infineon Technologies is a 60 V, 110 A (T_C = 25 °C), 2.9 mΩ R_DS(on) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor control inverters requiring low conduction loss and fast switching.

For engineers reviewing the IPB029N06N3GE8187ATMA1 datasheet, IPB029N06N3GE8187ATMA1 pinout, IPB029N06N3GE8187ATMA1 application, or IPB029N06N3GE8187ATMA1 equivalent, key selection criteria include verified R_DS(on) ≤ 2.9 mΩ at V_GS = 10 V, Q_g = 78 nC, t_on = 27 ns, avalanche-rated operation, and TO-220 footprint compatibility with thermal pad mounting.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve ultra-low R_DS(on) × Q_g figure-of-merit. It features a logic-level gate threshold (V_GS(th) = 2.0–3.0 V typ.) and supports 10 V gate drive for full enhancement.

Thermal design is enabled by its 0.5 K/W junction-to-case thermal resistance (R_thJC) and qualification per AEC-Q101 for automotive-grade reliability. The integrated body diode exhibits t_rr = 41 ns and Q_rr = 108 nC at I_F = 55 A, supporting synchronous rectification and ZVS topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; suitable for 48 V bus systems with 20 % margin.
R_DS(on) max	2.9 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <1.2 W conduction loss at 20 A continuous current.
I_D cont	110 A @ T_C = 25 °C - Supports high-current motor phases and power supply outputs without parallel devices.
Q_g	78 nC @ V_GS = 10 V - Determines gate driver current requirement (~1.6 A peak for 50 ns rise time).
t_on/t_off	27 ns / 22 ns @ R_G = 2.5 Ω - Enables >500 kHz switching in hard-switched SMPS designs.
E_AS	420 mJ - Rated single-pulse avalanche energy supports inductive load switching without external snubbers.
R_thJC	0.5 K/W - Allows 110 W dissipation with 55 K temperature rise from case to junction under forced-air cooling.

Pinout & Package

IPB029N06N3GE8187ATMA1 is housed in PG-TO220-3 package with isolated tab (drain-connected), standard through-hole mounting, and copper leadframe for enhanced thermal transfer. The package includes a solderable thermal pad on the drain tab for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch node in half-bridge.
Pin 2 (Gate)	Control input	Receives PWM signal; requires <3.0 V threshold for turn-on and 10 V for full R_DS(on).
Pin 3 (Drain)	High-side power terminal	Connected to heatsink via isolated tab; carries full load current and withstands 60 V transients.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	226 mΩ·nC - Reduces combined conduction and switching losses in high-frequency buck converters.
Avalanche-rated	420 mJ single-pulse E_AS - Eliminates need for external clamping in inductive switching applications.
Logic-level compatible	V_GS(th) = 2.0–3.0 V - Enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting.
Qualified per AEC-Q101	Stable operation from −55 °C to 175 °C - Validated for automotive engine control and ADAS power stages.
Optimized body diode	Q_rr = 108 nC, t_rr = 41 ns - Minimizes reverse recovery loss in synchronous rectifiers and LLC resonant converters.

Applications

Automotive DC-DC Converters

Industrial Motor Drives

Use Scenario: 12 V to 48 V bidirectional converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in interleaved buck-boost topology operating at 200 kHz.

Use Value: 2.9 mΩ R_DS(on) reduces conduction loss by 35 % vs. legacy 4.5 mΩ MOSFETs, enabling >96 % peak efficiency at 10 kW.

Use Scenario: Three-phase inverter stage for 3 kW servo motor control in CNC machinery.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge with 10 kHz PWM frequency.

Use Value: 78 nC gate charge allows clean 50 ns edge transitions using 2 A gate drivers, minimizing shoot-through risk and EMI.

Server PSU Primary Switch

Renewable Energy Inverters

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier with SiC diode output stage.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in asymmetric half-bridge topology, driven at 300 kHz.

Use Value: 0.5 K/W R_thJC enables 110 A operation with <85 °C case temperature using 200 LFM airflow, avoiding derating.

Use Scenario: DC link switch in 5 kW string inverter for residential solar PV systems.

IC Role / Device Role / Timing Role: Unidirectional freewheeling switch handling 80 A peak current during MPPT cycling.

Use Value: 420 mJ E_AS rating ensures robustness against line surges and transformer leakage spikes without snubber circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP032N06N3 G	R_DS(on) = 3.2 mΩ (higher), Q_g = 72 nC (lower), same PG-TO220-3 package	Slightly lower switching loss but higher conduction loss above 15 A; identical thermal interface	Select when gate drive capability is limited and average current stays below 18 A.
IPI032N06N3 G	Same R_DS(on) and Q_g specs, but qualified only to industrial grade (not AEC-Q101)	Not approved for automotive under-hood use; identical electrical performance in non-automotive settings	Prefer for cost-sensitive industrial UPS or lighting where automotive qualification is unnecessary.

Compared with IPP032N06N3 G and IPI032N06N3 G, IPB029N06N3GE8187ATMA1 delivers the lowest R_DS(on) in the family-critical for high-current, low-voltage applications-while maintaining AEC-Q101 compliance and matching gate drive requirements.

Availability

IPB029N06N3GE8187ATMA1 is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server power supply designs requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant MOSFETs.

Supply support for IPB029N06N3GE8187ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered for high-efficiency, high-current switching in automotive and industrial power conversion systems.

FAQ

Is IPB029N06N3GE8187ATMA1 pin-compatible with IPP032N06N3 G?

Yes-both use identical PG-TO220-3 package with source-gate-drain pinout (1-2-3). Mechanical footprint, thermal pad layout, and mounting hole positions match exactly, enabling drop-in replacement in existing PCBs without redesign.

What is the maximum recommended gate resistor for 300 kHz switching?

A 2.5 Ω gate resistor is validated in Infineon's application notes for 300 kHz operation, achieving t_on = 27 ns and t_off = 22 ns. Lower values (≤1.5 Ω) may cause ringing; higher values (>5 Ω) increase switching loss beyond 150 kHz.

Does this MOSFET require a negative gate turn-off voltage?

No-its V_GS(th) range (2.0–3.0 V) and low gate leakage (<100 nA) allow reliable turn-off with 0 V gate bias. Negative voltage is not required or recommended, though it may be used optionally to improve noise immunity in high-dV/dt environments.

Can IPB029N06N3GE8187ATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) ensures inherent current sharing. Parallel operation is validated up to four devices with matched gate drive routing and symmetric PCB layout per Infineon AN2017-05.

IPB029N06N3GE8187ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 118µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 188W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB029N06N3GE8187ATMA1 FAQ

1.How can I place an order for IPB029N06N3GE8187ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB029N06N3GE8187ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB029N06N3GE8187ATMA1 reliable?

The price and inventory of IPB029N06N3GE8187ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB029N06N3GE8187ATMA1 is usually 5 days.

3.What payment methods are accepted for IPB029N06N3GE8187ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB029N06N3GE8187ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB029N06N3GE8187ATMA1?

IPB029N06N3GE8187ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB029N06N3GE8187ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB029N06N3GE8187ATMA1?

For technical support, including IPB029N06N3GE8187ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB029N06N3GE8187ATMA1 requirements.

6.How does Aetrix verify that IPB029N06N3GE8187ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB029N06N3GE8187ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB029N06N3GE8187ATMA1 meets industry standards.

7.What is the process for return or replacement of IPB029N06N3GE8187ATMA1?

All IPB029N06N3GE8187ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB029N06N3GE8187ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB029N06N3GE8187ATMA1 part is unused and in its original packaging.

Return procedure for IPB029N06N3GE8187ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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