Infineon Technologies IPB034N03LGATMA1

Overview

IPB034N03LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 3.4 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 100 °C, and avalanche-rated for robust SMPS operation in DC/DC converters and synchronous rectification stages.

For engineers reviewing the IPB034N03LGATMA1 datasheet, IPB034N03LGATMA1 pinout, IPB034N03LGATMA1 application, or IPB034N03LGATMA1 equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), 4.5 V logic-level drive compatibility, 70 mJ single-pulse avalanche energy, and thermal resistance of 1.6 K/W (junction-to-case), critical for high-efficiency, high-density power stage design.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, optimized for high-frequency switching in synchronous buck converters and OR-ing applications. Its 25 nC total gate charge (Q_g) at 10 V and 21 nC at 4.5 V enables fast turn-on/off with minimal driver loss, while the 81 pF reverse transfer capacitance (C_rss) supports stable voltage-mode control under load transients.

The device integrates a robust body diode with 0.83–1.1 V forward voltage at 30 A and 20 nC reverse recovery charge (Q_rr), enabling efficient synchronous rectification without external Schottky diodes. Its 6 kV/µs dv/dt immunity ensures reliable operation in noisy high-side switching configurations.

Key Specifications

Pinout & Package

IPB034N03LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with exposed drain tab for thermal and electrical connection. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PBF and STL220N3LLH6, IPB034N03LGATMA1 uniquely combines 3.4 mΩ R_DS(on), 25 nC Q_g, 70 mJ avalanche energy, and TO263 thermal capability - making it optimal for high-reliability, high-power-density 30 V synchronous rectifiers and hot-swap switches.

Availability

IPB034N03LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, PoE++ PSEs, and automotive ADAS camera power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPB034N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification standards.

This part belongs to the OptiMOS™ 3 logic-level MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in data center, telecom, and automotive power systems.

FAQ

Is IPB034N03LGATMA1 suitable for synchronous rectification in a 30 V input buck converter?

Yes. With 3.4 mΩ R_DS(on) at 10 V, 21 nC Q_g at 4.5 V, and a body diode V_SD of 0.83–1.1 V at 30 A, it delivers low conduction and switching losses in synchronous rectifier mode. Its 6 kV/µs dv/dt immunity prevents false turn-on during high-side switching transitions.

What is the maximum recommended PCB copper area for thermal performance in TO263 package?

Per datasheet Rev. 2.0, a 6 cm² copper area (single layer, 70 µm thick) on FR4 PCB provides R_thJA = 40 K/W. For optimal thermal performance, the exposed drain tab must be fully soldered to this copper area, and vertical mounting in still air is assumed. Larger or multilayer copper improves cooling further.

Does IPB034N03LGATMA1 require a gate resistor for stability in 500 kHz switching?

Yes. A 1.6 Ω gate resistor is specified in the datasheet for dynamic characterization (e.g., t_d(on), t_r). This value damps gate oscillation and controls di/dt during turn-on. For 500 kHz operation, use 1–2.2 Ω to balance switching speed and EMI, verified with actual gate driver output impedance and layout parasitics.

How does the avalanche rating impact reliability in flyback converter primary switches?

The guaranteed 70 mJ single-pulse avalanche energy allows the device to safely absorb leakage inductance energy during MOSFET turn-off without external snubbers. In flyback designs with 24 V input, this eliminates risk of V_DS overshoot exceeding 30 V, improving long-term reliability and reducing component count.