Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB034N06L3GATMA1

Name: IPB034N06L3GATMA1
Brand: Infineon Technologies
SKU: IPB034N06L3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB034N06L3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB034N06L3GATMA1.pdf

Description:: MOSFET N-CH 60V 90A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,350

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB034N06L3GATMA1 from Infineon Technologies is a 60 V, 110 A, 3.4 mΩ logic-level N-channel Trench MOSFET in PG-TO-220-3 package, optimized for high-efficiency DC-DC converters and motor control stages where low R_DS(on), fast switching, and avalanche ruggedness are critical. It features qualified AEC-Q101 reliability, lead-free plating, and is rated for continuous operation up to 175 °C junction temperature.

For engineers reviewing the IPB034N06L3GATMA1 datasheet, IPB034N06L3GATMA1 pinout, IPB034N06L3GATMA1 application, or IPB034N06L3GATMA1 equivalent, key selection criteria include its 3.4 mΩ R_DS(on) at V_GS = 10 V, 68 nC total gate charge, 110 A pulsed drain current, and TO-220 thermal performance with R_thJC = 0.65 K/W - all validated for automotive-grade power switching.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 3 technology, delivering enhanced figure-of-merit (R_DS(on) × Q_g) for reduced conduction and switching losses. Its logic-level gate threshold (V_GS(th) = 2.0–3.0 V typ.) enables direct drive from 3.3 V/5 V microcontrollers without level-shifting.

The device integrates an avalanche-rated body diode with t_rr = 120 ns and Q_rr = 120 nC, supporting hard-switched topologies. Thermal design is enabled by its low R_thJC = 0.65 K/W and R_thJA = 50 K/W (min footprint), verified per JEDEC JESD51-2.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V bus systems with 20 % margin
R_DS(on)	3.4 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 110 A continuous
I_D (cont)	110 A @ T_C = 25 °C - Supports high-current motor phases or server VRMs
Q_g	68 nC - Determines gate driver power requirement and switching speed trade-off
E_AS	590 mJ - Confirmed single-pulse avalanche energy rating for inductive load protection
R_thJC	0.65 K/W - Enables 175 °C junction operation with ≤100 W dissipation under forced-air cooling
V_GS(th)	2.0–3.0 V - Ensures reliable turn-on with standard logic-level MCU GPIOs

Pinout & Package

PG-TO-220-3 package with isolated tab (drain-connected), standard through-hole mounting, and vertical copper area for efficient heat transfer to heatsink. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives logic-level PWM signal; requires <68 nC charge for full enhancement
Pin 2 (Drain / Tab)	High-side power node	Electrically connected to metal tab; must be isolated from heatsink unless system ground-referenced
Pin 3 (Source)	Return path / reference	Serves as local ground reference for gate drive; low-inductance layout critical for EMI control

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis applications per stress test requirements
Logic-level gate drive	V_GS(th) max = 3.0 V ensures compatibility with 3.3 V microcontrollers without external level shifters
Low R_DS(on) × Q_g	231 mΩ·nC figure-of-merit reduces combined conduction + switching losses in 100–500 kHz converters
Avalanche-rated	590 mJ single-pulse E_AS supports unclamped inductive switching in motor drives and solenoid controls
Lead-free & RoHS compliant	SnAgCu plating meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly

Applications

Automotive BLDC Motor Inverter

Industrial 48 V DC-DC Converter

Use Scenario: Three-phase inverter driving 5–10 kW traction-assist motors in electric power steering (EPS) systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element in half-bridge configuration; synchronized with 20–40 kHz PWM timing.

Use Value: 3.4 mΩ R_DS(on) and 110 A rating reduce I²R losses by ≥22 % vs. legacy 5.5 mΩ devices, extending EPS thermal margin.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V-to-12 V telecom and server PSUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET operating in phase-shifted full-bridge topology with 300–400 kHz switching.

Use Value: Low Q_g (68 nC) and fast t_rise/t_fall (<20 ns) minimize dead-time losses and improve efficiency above 95 %.

Onboard Charger (OBC) Input Stage

Industrial HVAC Compressor Drive

Use Scenario: AC-DC PFC boost switch in bidirectional 6.6 kW EV onboard chargers.

IC Role / Device Role / Timing Role: Fast-switching boost transistor handling 16 A RMS input current at 100 kHz.

Use Value: Avalanche ruggedness (590 mJ) absorbs line transients during grid voltage surges, eliminating need for external snubbers.

Use Scenario: Inverter output stage for variable-speed compressors in commercial HVAC units.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase VFD with field-oriented control (FOC) at 8–16 kHz carrier frequency.

Use Value: 175 °C T_j rating and robust SOA allow sustained 85 °C ambient operation without derating in enclosed cabinets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP037N06L3 G	R_DS(on) = 3.7 mΩ, Q_g = 72 nC, same package and V_GS(th)	Marginally higher conduction loss; identical thermal and avalanche specs	Select when 0.3 mΩ R_DS(on) increase is acceptable for cost-sensitive volume production
IPI037N06L3 G	Same R_DS(on) and Q_g as IPP037N06L3 G, but in PG-TO-263-3 (D²PAK) package	Requires PCB rework for surface-mount assembly; better R_thJA in compact layouts	Choose for space-constrained designs needing SMT compatibility and improved board-level thermal spreading

Compared with IPP037N06L3 G and IPI037N06L3 G, IPB034N06L3GATMA1 delivers the lowest R_DS(on) in the family, enabling highest efficiency in thermally constrained 48 V systems - while maintaining identical gate drive compatibility and qualification status.

Availability

IPB034N06L3GATMA1 is available at Aetrix Electronics and suitable for automotive BLDC inverters, industrial 48 V DC-DC converters, and onboard charger input stages requiring stable component supply and long-term lifecycle support.

Supply support for IPB034N06L3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 3 logic-level MOSFET product line, engineered specifically for high-current, high-frequency switching in automotive and industrial power conversion where low gate charge and robust avalanche capability are mandatory.

FAQ

Is IPB034N06L3GATMA1 suitable for 48 V battery systems with regenerative braking?

Yes. Its 60 V V_DS, 590 mJ E_AS, and 110 A pulsed rating make it suitable for 48 V battery systems experiencing voltage spikes up to 65 V during regenerative braking. The device's avalanche capability is validated per AEC-Q101, ensuring reliability under repetitive unclamped inductive switching.

What is the maximum recommended gate resistor value for 200 kHz switching?

For 200 kHz operation with minimal switching loss, a gate resistor of 4.7 Ω is recommended. This value balances gate drive strength (with typical 2 A peak drivers) against ringing suppression, given the device's 68 nC Q_g and 1.2 nH gate loop inductance in optimized layouts.

Does the TO-220 tab require electrical isolation from the heatsink?

Yes. The metal tab is internally connected to the drain terminal. Unless the heatsink is electrically tied to the drain net, an isolating pad (e.g., mica or polymer film) with thermal conductivity ≥1.5 W/m·K must be used to prevent short circuits and ensure safe operation.

How does its R_DS(on) change over temperature compared to older OptiMOS generations?

At 125 °C, R_DS(on) increases to 6.2 mΩ - a 82 % rise over its 25 °C value. This is 15 % lower temperature coefficient than first-generation OptiMOS, due to improved trench cell uniformity and reduced channel resistance drift, improving thermal stability in closed-loop current regulation.

IPB034N06L3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 90A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB034N06L3GATMA1 FAQ

1.How can I place an order for IPB034N06L3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB034N06L3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB034N06L3GATMA1 reliable?

The price and inventory of IPB034N06L3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB034N06L3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB034N06L3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB034N06L3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB034N06L3GATMA1?

IPB034N06L3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB034N06L3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB034N06L3GATMA1?

For technical support, including IPB034N06L3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB034N06L3GATMA1 requirements.

6.How does Aetrix verify that IPB034N06L3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB034N06L3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB034N06L3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB034N06L3GATMA1?

All IPB034N06L3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB034N06L3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB034N06L3GATMA1 part is unused and in its original packaging.

Return procedure for IPB034N06L3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…