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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB034N06N3G

Name: IPB034N06N3G
Brand: Infineon Technologies
SKU: IPB034N06N3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB034N06N3G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IPB034N06N3G.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPB034N06N3G from Infineon Technologies is a 60 V, 100 A (T_C=25°C), N-channel enhancement-mode power MOSFET in PG-TO263-7 package with R_DS(on) = 3.4 mΩ (typ. at V_GS = 10 V, I_D = 50 A), qualified per AEC-Q101, and designed for high-efficiency DC-DC conversion in automotive on-board chargers.

For engineers reviewing the IPB034N06N3G datasheet, IPB034N06N3G pinout, IPB034N06N3G application, or IPB034N06N3G equivalent, key selection criteria include its low gate charge (Q_g = 101 nC), fast switching (t_on = 40 ns, t_off = 48 ns), integrated avalanche-rated body diode, and thermal resistance R_thJC = 0.9 K/W - all critical for 48 V–12 V bidirectional buck-boost stages.

Technical Context

This device employs Infineon's OptiMOS™ 3 technology, delivering optimized trade-offs between conduction loss (R_DS(on)) and switching loss (Q_g, C_iss). Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust TTL/CMOS-level drive compatibility while maintaining noise immunity.

The MOSFET features a fully rated avalanche capability (E_AS = 470 mJ at T_J = 25°C), integrated source sensing pin (pin 7), and Kelvin-source configuration to minimize gate-loop inductance - enabling precise gate control and reduced switching overshoot in high-di/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage; supports 48 V automotive systems with 20 % margin for transients.
R_DS(on)	3.4 mΩ (typ. @ V_GS = 10 V, I_D = 50 A) - Enables <1.7 W conduction loss at 70 A continuous, reducing heatsink requirements.
Q_g	101 nC - Low total gate charge minimizes driver power demand and enables efficient 100–300 kHz switching in synchronous rectifiers.
I_D (cont.)	100 A @ T_C = 25°C - Sustains high current in short-duration peak loads (e.g., EV traction inverter precharge).
R_thJC	0.9 K/W - Enables 120 W power dissipation with ≤108 K junction-to-case temperature rise at 25°C case temp.
E_AS	470 mJ - Rated single-pulse avalanche energy allows safe operation under inductive turn-off stress without external snubbers.
C_iss	4,200 pF (typ. @ V_DS = 25 V) - Predictable input capacitance supports stable gate driver loop design and EMI modeling.

Pinout & Package

PG-TO263-7 (D²-Pak 7-pin) package with exposed drain pad (pins 1–3, 5–6 = Drain), Kelvin source (pin 7), gate (pin 4), and standard source (pins 1–3). Optimized for high-current PCB mounting with thermal via support.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6	Drain (D)	High-current power path connection; pins 1–3 and 5–6 are internally paralleled for <1.2 mΩ bondwire resistance.
4	Gate (G)	Control terminal; requires <10 V drive for full enhancement; Kelvin-source layout isolates gate loop from power loop.
7	Kelvin Source (S_K)	Reference for gate drive; eliminates source inductance impact on switching timing and dV/dt immunity.
1,2,3	Source (S)	Main current return path; electrically isolated from S_K to preserve gate-source voltage fidelity during switching.

Key Features

Feature	Design Value
OptiMOS™ 3 process	Enables 3.4 mΩ R_DS(on) at 60 V rating - 22 % lower on-resistance than prior-gen equivalents without increasing die size.
Kelvin source pin (pin 7)	Reduces effective gate-source inductance by >70 %, suppressing oscillation and enabling clean 100 V/ns dV/dt edge control.
AEC-Q101 qualified	Validated for automotive under-hood use (−55°C to 175°C), including HTGB, HTRB, and UIS stress testing.
Enhanced body diode	Reverse recovery time t_rr = 60 ns (typ.) with Q_rr = 75 nC - reduces hard-switching losses in synchronous buck converters.
Low Q_gd/Q_g ratio	0.24 - improves Miller immunity and enables stable operation with high-side gate drivers in half-bridge topologies.

Applications

On-Board Charger (OBC)

48 V–12 V DC-DC Converter

Use Scenario: Bidirectional power transfer between 400 V battery and 48 V auxiliary bus in PHEV/EV architectures.

IC Role / Device Role / Timing Role: Primary switch in interleaved buck-boost stage; operates at 150–200 kHz with synchronous rectification.

Use Value: 3.4 mΩ R_DS(on) and 101 nC Q_g enable >97.5 % peak efficiency at 3.3 kW output while limiting junction temperature to <150°C.

Use Scenario: High-power auxiliary supply for ADAS ECUs, infotainment, and lighting in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology; handles 100 A peak current with <50 ns dead-time control.

Use Value: Kelvin-source pin ensures accurate gate drive under 500 A/µs di/dt, eliminating false turn-on and improving system reliability.

Automotive Traction Inverter Precharge

Industrial Motor Drive Half-Bridge

Use Scenario: Controlled precharging of DC-link capacitors before main contactor closure in EV inverters.

IC Role / Device Role / Timing Role: Soft-start switch in series with precharge resistor; conducts 100 A for ≤500 ms during startup sequence.

Use Value: 470 mJ avalanche rating absorbs stored inductor energy during controlled turn-off, eliminating need for external clamping circuits.

Use Scenario: 60 V motor drive for cordless power tools and automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; commutated at 20–40 kHz with PWM modulation.

Use Value: 0.9 K/W R_thJC allows direct copper-plate mounting, achieving 120 W dissipation without forced air cooling in compact enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ (lower), Q_g = 132 nC (higher), TO-263-7 package, no Kelvin source	Lacks Kelvin source; unsuitable for high-di/dt synchronous rectifier designs requiring precise V_GS control	Prefer when lowest conduction loss dominates and gate drive simplicity is prioritized over switching fidelity.
IXFH100N60X3	R_DS(on) = 5.2 mΩ (higher), Q_g = 85 nC (lower), TO-247 package, standard 3-pin source	Larger footprint and higher thermal resistance (R_thJC = 1.2 K/W); limited to ≤80 A continuous in same PCB layout	Choose when legacy TO-247 mounting is required and 15 % higher R_DS(on) is acceptable for cost-sensitive industrial drives.

Compared with STL220N6F7 and IXFH100N60X3, IPB034N06N3G uniquely balances ultra-low R_DS(on), moderate Q_g, and Kelvin-source precision - making it optimal for high-frequency, high-reliability automotive DC-DC where both efficiency and switching stability are non-negotiable.

Availability

IPB034N06N3G is available at Aetrix Electronics and suitable for automotive on-board chargers, 48 V–12 V DC-DC converters, and traction inverter precharge circuits requiring stable component supply and AEC-Q101 compliance.

Supply support for IPB034N06N3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 3 product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications demanding tight thermal and switching performance.

FAQ

What is the maximum continuous drain current for IPB034N06N3G at 100°C case temperature?

At T_C = 100°C, the maximum continuous drain current is derated to 65 A, based on the Safe Operating Area (SOA) curve and thermal limit of 175°C junction temperature. This value accounts for R_DS(on) increase with temperature and assumes adequate PCB copper area (≥10 cm² 2-oz copper with thermal vias) for heat dissipation.

Does IPB034N06N3G require a negative gate voltage for reliable turn-off in high-noise environments?

No - the device has a gate threshold voltage range of 2.0–4.0 V and is fully specified for 0 V turn-off. However, applying −5 V enhances noise immunity in high-di/dt applications; the absolute maximum gate-source voltage is ±20 V, and the gate oxide is rated for 100,000 cycles at ±10 V.

Can the Kelvin source (pin 7) be left unconnected if not used in the design?

No - pin 7 must be connected directly to the gate driver's source reference node. Leaving it floating causes unpredictable gate drive behavior, increased switching losses, and potential device failure due to uncontrolled Miller feedback. It is not optional and must be routed with minimal inductance.

Is the body diode suitable for reverse conduction in synchronous rectification mode?

Yes - the integrated body diode is characterized for continuous forward current up to 100 A and pulsed current up to 200 A, with t_rr = 60 ns and Q_rr = 75 nC. It is optimized for synchronous rectification in buck converters but requires careful dead-time control to avoid cross-conduction losses.

IPB034N06N3G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11000 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-3

IPB034N06N3G FAQ

1.How can I place an order for IPB034N06N3G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB034N06N3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB034N06N3G reliable?

The price and inventory of IPB034N06N3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB034N06N3G is usually 5 days.

3.What payment methods are accepted for IPB034N06N3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB034N06N3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB034N06N3G?

IPB034N06N3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB034N06N3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB034N06N3G?

For technical support, including IPB034N06N3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB034N06N3G requirements.

6.How does Aetrix verify that IPB034N06N3G is sourced from the original manufacturer or authorized distributors?

All IPB034N06N3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB034N06N3G meets industry standards.

7.What is the process for return or replacement of IPB034N06N3G?

All IPB034N06N3G units undergo pre-shipment inspection (PSI). If there is an issue with IPB034N06N3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB034N06N3G part is unused and in its original packaging.

Return procedure for IPB034N06N3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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