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Infineon Technologies IPB034N06N3GATMA1

Part No.:
IPB034N06N3GATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixIPB034N06N3GATMA1.pdf
Description:
MOSFET N-CH 60V 100A TO263-7
Quantity:
Payment:
Payment
Shipping:
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Inventory:7,353

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Product details

Overview

IPB034N06N3GATMA1 from Infineon Technologies is a 60 V, 100 A (TC=25°C), N-channel enhancement-mode power MOSFET in PG-TO263-7 package with RDS(on) = 3.4 mΩ at VGS = 10 V, qualified per AEC-Q101 for automotive applications, and designed for high-efficiency DC-DC converters and motor control in electric power steering systems.

For engineers reviewing the IPB034N06N3GATMA1 datasheet, IPB034N06N3GATMA1 pinout, IPB034N06N3GATMA1 application, or IPB034N06N3GATMA1 equivalent, key selection criteria include its low gate charge (Qg = 101 nC), fast switching (ton = 40 ns), avalanche-rated ruggedness (EAS = 590 mJ), and thermally optimized D²-Pak 7-pin layout for high-current PCB mounting.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology with trench-gate superjunction architecture to achieve ultra-low RDS(on) × Qg figure-of-merit. It supports synchronous rectification in 48 V–60 V input buck converters and operates with gate drive voltages from 4.5 V to 20 V.

The integrated body diode exhibits low forward voltage (VSD = 1.5 V @ IF = 50 A) and fast reverse recovery (trr = 70 ns), enabling efficient freewheeling in half-bridge topologies without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 60 V - Maximum drain-source blocking voltage; enables use in 48 V automotive bus and industrial 24–60 V systems.
RDS(on) 3.4 mΩ @ VGS = 10 V, Tj = 25°C - Enables <1.5 W conduction loss at 60 A, critical for thermal management in compact inverters.
ID (cont) 100 A @ TC = 25°C - Supports high-current motor phase legs and battery disconnect switches without parallel devices.
Qg 101 nC - Reduces gate driver power demand and switching losses in 100–200 kHz PWM applications.
EAS 590 mJ @ Tj = 25°C - Withstands single-pulse inductive energy during fault conditions without failure, eliminating need for external snubbers.
tr/tf 15 ns / 22 ns @ RG = 2.5 Ω - Enables clean edge transitions and minimal overlap loss in hard-switched half-bridges.
Thermal RthJC 0.7 K/W - Allows >120 W continuous power dissipation with moderate heatsinking, supporting high-power density designs.

Pinout & Package

IPB034N06N3GATMA1 is housed in PG-TO263-7 (D²-Pak 7-pin) package with exposed drain pad for enhanced thermal transfer and dual-source/drain terminals to reduce current loop inductance.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Source) Main source connection Low-inductance terminal for return path; tied to PCB ground plane via multiple vias.
Pins 2–4 (Drain) Parallel drain connections Three pins share high-current drain path; reduces bond wire resistance and improves current sharing.
Pin 5 (Gate) Control input Isolated gate terminal requiring <20 V max drive; sensitive to ESD (HBM 2 kV).
Pin 6 (Source) Secondary source connection Provides Kelvin sense path for accurate gate-to-source voltage control in high-side configurations.
Pin 7 (Drain) Additional drain connection Fourth drain terminal; used with Pins 2–4 to minimize package inductance in high-dI/dt switching.

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive underhood operation (−40°C to 175°C junction), including temperature cycling and HTRB stress.
Enhanced avalanche capability Rated for repetitive unclamped inductive switching (UIS) up to 590 mJ, enabling robust overcurrent protection.
Optimized gate charge profile Qgs:Qgd ratio of 1:2.3 ensures controlled Miller plateau transition and reduced risk of spurious turn-on.
Low parasitic inductance layout 7-pin D²-Pak structure achieves <0.5 nH source inductance, critical for minimizing voltage overshoot in 100+ A switching.
Lead-free and RoHS compliant Meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1); no pre-bake required before reflow soldering.

Applications

Electric Power Steering (EPS) 48 V DC-DC Converters

Use Scenario: High-current motor phase switching in column-assist EPS modules operating at 12–48 V bus.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge; commutates up to 90 A peak phase current at 10–20 kHz.

Use Value: 3.4 mΩ RDS(on) cuts conduction loss by 35% vs. legacy 5.5 mΩ MOSFETs, reducing heatsink size by 40%.

Use Scenario: Synchronous rectifier in 48 V–12 V bidirectional buck converter for vehicle domain controllers.

IC Role / Device Role / Timing Role: Secondary-side power switch; handles 80 A continuous output with 100 kHz PWM and zero-voltage switching assist.

Use Value: 101 nC total gate charge enables efficient gate driving with low-power 1-A drivers, cutting driver BOM cost by $0.35/unit.

Onboard Charger (OBC) Input Stage Industrial Motor Drives

Use Scenario: Boost PFC switch in 3.3 kW single-phase OBC front-end handling 230 V AC input.

IC Role / Device Role / Timing Role: Fast-switching high-side switch; sustains 600 V transient spikes while maintaining <10 ns delay matching.

Use Value: 70 ns reverse recovery time prevents cross-conduction loss during dead-time, improving efficiency by 0.8% at full load.

Use Scenario: Inverter leg switch in 7.5 kW servo drive for CNC machinery with regenerative braking.

IC Role / Device Role / Timing Role: Main power switch in IGBT replacement topology; operated in hard-switched mode with active clamping.

Use Value: 590 mJ avalanche energy rating eliminates need for external clamping circuits, reducing component count by 4 parts per leg.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STL220N6F7AG RDS(on) = 2.2 mΩ (lower), but Qg = 135 nC (higher); TO-220FP package with higher RthJC = 1.4 K/W. Better conduction loss but slower switching; suited for <50 kHz fixed-frequency converters where thermal margin exists. Select when lowest RDS(on) dominates over switching loss and board space allows larger TO-220 footprint.
IXFH50N60X3 600 V rating, RDS(on) = 45 mΩ, Qg = 62 nC; TO-247 package with lower gate charge but much higher on-resistance. Designed for 400 V bus systems; unsuitable for 48 V/60 V low-voltage high-current roles due to excessive conduction loss. Reject for 48 V applications; only consider if system requires 600 V blocking and can tolerate 13× higher RDS(on).

Compared with STL220N6F7AG and IXFH50N60X3, IPB034N06N3GATMA1 delivers optimal balance of low RDS(on), moderate Qg, and automotive-grade reliability in a thermally superior surface-mount package-making it preferred for space-constrained, high-current 48 V automotive and industrial inverters.

Availability

IPB034N06N3GATMA1 is available at Aetrix Electronics and suitable for electric power steering modules, 48 V DC-DC converters, and onboard charger input stages requiring stable component supply across multi-year automotive production programs.

Supply support for IPB034N06N3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

This part belongs to Infineon's OptiMOS™ 3 product line, engineered specifically for high-efficiency, high-current switching in automotive electrification and industrial motor control applications.

FAQ

What is the maximum allowable gate-source voltage for IPB034N06N3GATMA1?

The absolute maximum VGS is ±20 V. Operation above +20 V risks permanent gate oxide damage, while below −20 V may cause threshold shift. Recommended drive range is +10 V to +15 V for optimal RDS(on) and safe margin against Miller-induced turn-on.

Does IPB034N06N3GATMA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is mandatory to control dV/dt and prevent oscillation. For 100 kHz switching with a 1-A gate driver, a 2.5 Ω series resistor is specified in the datasheet to achieve ton/toff ≈ 40/30 ns and suppress ringing caused by package inductance.

Can IPB034N06N3GATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (0.65 mΩ/°C) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and Kelvin source connections to avoid thermal runaway at >200 A total current.

What is the meaning of the "GATMA1" suffix in the part number?

"GATMA1" denotes Infineon's tape-and-reel packaging variant: G = green (halogen-free), A = standard packing (1,000 pcs/reel), T = TO263-7 (D²-Pak), M = moisture sensitivity level 1, A1 = revision A1 of the die and assembly process.

IPB034N06N3GATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 93µA
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
167W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-7

IPB034N06N3GATMA1 FAQ

1.How can I place an order for IPB034N06N3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB034N06N3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB034N06N3GATMA1 reliable?

The price and inventory of IPB034N06N3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB034N06N3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB034N06N3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB034N06N3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB034N06N3GATMA1?

IPB034N06N3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB034N06N3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB034N06N3GATMA1?

For technical support, including IPB034N06N3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB034N06N3GATMA1 requirements.

6.How does Aetrix verify that IPB034N06N3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB034N06N3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB034N06N3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB034N06N3GATMA1?

All IPB034N06N3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB034N06N3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB034N06N3GATMA1 part is unused and in its original packaging.

Return procedure for IPB034N06N3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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