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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB039N04LGATMA1

Name: IPB039N04LGATMA1
Brand: Infineon Technologies
SKU: IPB039N04LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB039N04LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB039N04LGATMA1.pdf

Description:: MOSFET N-CH 40V 80A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,673

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Product details

Overview

IPB039N04LGATMA1 from Infineon Technologies is an N-channel logic-level power MOSFET optimized for high-efficiency DC/DC converters and SMPS applications, featuring 40 V V_DS, 3.9 mΩ R_DS(on) at V_GS = 10 V, 80 A continuous drain current at T_C = 25 °C, and 100% single-pulse avalanche tested. It is housed in a PG-TO220-3 package with Pb-free, RoHS-compliant, halogen-free plating.

For engineers reviewing the IPB039N04LGATMA1 datasheet, IPB039N04LGATMA1 pinout, IPB039N04LGATMA1 application, or IPB039N04LGATMA1 equivalent, key selection considerations include its low gate charge × R_DS(on) figure of merit (FOM), fast switching performance (t_r = 5.4 ns, t_f = 6.0 ns), integrated robust body diode (Q_rr = 50 nC), and thermal resistance of 1.6 K/W (junction-to-case).

Technical Context

This MOSFET employs Infineon's OptiMOS™ 4 technology, delivering enhanced conduction and switching efficiency via reduced R_DS(on) and optimized gate charge distribution. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting.

The device supports synchronous rectification in buck converters and high-side/low-side configurations in industrial power supplies. Its 1.6 K/W R_thJC and 60 mJ E_AS rating support reliable operation under transient overloads and thermal cycling in compact, air-cooled designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 24 V and 36 V input rails in industrial and telecom power systems.
R_DS(on) max	3.9 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 80 A, critical for high-current output stages.
I_D continuous	80 A @ T_C = 25 °C - Supports high-power density designs with minimal parallel devices.
Q_g total	59–78 nC - Low gate charge reduces driver power and enables efficient 500 kHz+ switching in resonant topologies.
E_AS	60 mJ - Confirmed single-pulse avalanche energy ensures ruggedness during inductive turn-off transients.
R_thJC	1.6 K/W - Enables predictable junction temperature rise under full load when mounted on standard heatsinks.
Q_rr	50 nC - Low reverse recovery charge minimizes switching losses and EMI in synchronous rectifier operation.

Pinout & Package

IPB039N04LGATMA1 is supplied in the PG-TO220-3 package (standard through-hole variant), with drain connected to the metal tab for optimal thermal path and source/gate on leads 1 and 2 respectively.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane or source return path.
Lead 2 (Gate)	Control input	Logic-level compatible; requires ≤20 V drive; gate resistance R_G = 1.6 Ω internal.
Metal tab (Drain)	Power drain terminal	Primary heat dissipation path; electrically tied to drain; must be insulated from heatsink unless floating design.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate drivers in 3.3 V/5 V microcontroller-based SMPS.
FOM (Q_g × R_DS(on))	~230–300 nC·mΩ - balances switching speed and conduction loss for peak efficiency in 300–1000 kHz converters.
100% avalanche tested	Each unit validated to 60 mJ E_AS - guarantees robustness against inductive kickback in motor drives and flyback circuits.
Halogen-free & RoHS	Complies with IEC61249-2-21 - meets environmental requirements for industrial and automotive-qualified power systems.

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V @ up to 200 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phase leg.

Use Value: 3.9 mΩ R_DS(on) and 50 nC Q_rr reduce conduction and switching losses, enabling >95% efficiency at 500 kHz.

Use Scenario: 24 V input to 5 V/12 V isolated or non-isolated converter in PLC power modules.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or half-bridge topology.

Use Value: 40 V rating and 60 mJ avalanche capability ensure reliability during bus transients and short-circuit events.

Telecom Rectifier

Motor Drive Inverter Stage

Use Scenario: 48 V input AC/DC front-end with PFC + LLC secondary-side synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET in LLC resonant converter output stage.

Use Value: Low Q_g/R_DS(on) FOM improves light-load efficiency and reduces gate driver thermal stress.

Use Scenario: 24–48 V BLDC inverter for industrial pumps and fans (3-phase, 10–30 A per phase).

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter bridge driving trapezoidal commutation.

Use Value: 80 A continuous rating and 1.6 K/W R_thJC allow sustained torque delivery without forced cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 3.7 mΩ @ 10 V, but higher Q_g = 92 nC; TO-220FP package with lower P_tot (79 W).	Suitable for lower-frequency (<300 kHz) designs where gate drive strength is less constrained.	Prefer when prioritizing lowest R_DS(on) over switching speed; verify thermal margin due to reduced power dissipation.
IRF1404ZLPbF	R_DS(on) = 4.7 mΩ @ 10 V, Q_g = 131 nC, no avalanche rating; legacy generation with higher FOM (~615 nC·mΩ).	Acceptable only in cost-sensitive, non-ruggedized 50–100 kHz linear or quasi-resonant supplies.	Avoid in new designs requiring avalanche robustness or >200 kHz operation; higher losses increase thermal footprint.

Compared with STL220N4F7AG and IRF1404ZLPbF, IPB039N04LGATMA1 delivers superior FOM, guaranteed avalanche capability, and tighter V_GS(th) distribution-making it the preferred choice for high-reliability, high-frequency industrial and telecom power stages.

Availability

IPB039N04LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPB039N04LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IPB039N04LGATMA1 belongs to the OptiMOS™ 4 product line, engineered specifically for high-efficiency, high-current switching in server, telecom, and industrial power conversion systems.

FAQ

Is IPB039N04LGATMA1 suitable for synchronous rectification in LLC resonant converters?

Yes. With its 50 nC reverse recovery charge (Q_rr), 3.9 mΩ R_DS(on), and logic-level gate threshold (1.2–2.0 V), it enables efficient zero-voltage switching (ZVS) in secondary-side synchronous rectification. Its low Crss (39 pF typ.) also minimizes Miller-induced shoot-through risk at high dV/dt.

What is the maximum recommended gate resistor value for hard-switched 500 kHz operation?

For 500 kHz hard-switched operation, a gate resistor of 2.2–4.7 Ω is recommended to balance switching speed (t_r/t_f) and gate ringing. This accounts for the device's 1.6 Ω intrinsic R_G and typical driver output impedance, ensuring clean transitions while limiting peak gate current to <3 A.

Does IPB039N04LGATMA1 require a heatsink in a 80 A continuous application?

Yes. At 80 A and 3.9 mΩ R_DS(on), conduction loss is ~25 W. With R_thJC = 1.6 K/W and ambient ≤50 °C, a heatsink with R_thSA ≤ 1.0 K/W is required to maintain T_j < 150 °C. Mounting on ≥6 cm² copper area improves thermal performance by ~20%.

How does the avalanche rating impact system-level reliability in motor drive applications?

The 60 mJ single-pulse avalanche rating allows safe clamping of inductive energy during MOSFET turn-off in motor phase legs without external snubbers. This prevents destructive voltage overshoot during sudden current interruption-critical for brushless DC and stepper motor drivers operating at 24–48 V bus voltages.

IPB039N04LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 78 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6100 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB039N04LGATMA1 FAQ

1.How can I place an order for IPB039N04LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB039N04LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB039N04LGATMA1 reliable?

The price and inventory of IPB039N04LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB039N04LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB039N04LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB039N04LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB039N04LGATMA1?

IPB039N04LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB039N04LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB039N04LGATMA1?

For technical support, including IPB039N04LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB039N04LGATMA1 requirements.

6.How does Aetrix verify that IPB039N04LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB039N04LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB039N04LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB039N04LGATMA1?

All IPB039N04LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB039N04LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB039N04LGATMA1 part is unused and in its original packaging.

Return procedure for IPB039N04LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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