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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB03N03LA

Name: IPB03N03LA
Brand: Infineon Technologies
SKU: IPB03N03LA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB03N03LA

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB03N03LA.pdf

Description:: MOSFET N-CH 25V 80A TO263-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,901

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Product details

Overview

IPB03N03LA from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3-2 package, rated for 25 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 2.7 mΩ R_DS(on) max at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in high-frequency DC/DC converters up to 1 MHz.

For engineers reviewing the IPB03N03LA datasheet, IPB03N03LA pinout, IPB03N03LA application, or IPB03N03LA equivalent, key selection criteria include its 1 K/W junction-to-case thermal resistance, dv/dt rating of 6 kV/µs, gate charge total of 43–57 nC, and 175 °C maximum operating temperature-critical for compact, thermally constrained power stages.

Technical Context

This MOSFET employs a trench-based silicon process optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with minimal conduction and switching losses. Its logic-level gate threshold (1.2–2.0 V typ.) ensures full enhancement with standard 3.3 V or 5 V drive.

The device integrates a robust body diode with Q_rr = 20 nC (at dI_F/dt = 400 A/µs) and V_SD = 0.96–1.2 V at I_F = 80 A, supporting hard-switched and synchronous rectification topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on) max	2.7 mΩ @ V_GS = 10 V - Enables ≤1.7 W conduction loss at 80 A
I_D cont.	80 A @ T_C = 25 °C - Supported by low R_thJC = 1 K/W and TO263 thermal pad
Q_g total	43–57 nC - Determines gate driver current requirement (~2.8 A peak for 20 ns rise)
dv/dt rating	6 kV/µs - Ensures immunity to parasitic turn-on in high-dI/dt synchronous buck phases
T_j max	175 °C - Allows operation in sealed enclosures or high ambient industrial environments
E_AS	960 mJ - Supports single-pulse inductive energy absorption without failure

Pinout & Package

Package: PG-TO263-3-2 (SMD variant of TO-263), featuring exposed drain pad for thermal conduction to PCB copper area. Standard 3-pin configuration with G-D-S layout.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab / Drain)	Main current path output terminal	Exposed copper pad soldered to ≥6 cm² PCB copper for R_thJA = 40 K/W
Pin 2 (Source)	Reference node for gate drive and current sensing	Low-inductance connection required for stable switching and accurate R_DS(on)-based current monitoring
Pin 3 (Gate)	Control electrode for channel modulation	Requires <1 Ω series gate resistor to damp ringing; gate charge profile supports 5 V logic drive

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS = 4.5 V enables direct interface with microcontroller GPIO or low-voltage PWM controllers
Optimized FOM (Q_g × R_DS(on))	~115 nC·mΩ - balances switching speed and conduction loss for 300 kHz–1 MHz DC/DC designs
Robust body diode	Q_rr = 20 nC and soft recovery reduce EMI and cross-conduction risk in synchronous rectifiers
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 - validated for reflow, temperature cycling, and humidity exposure in production assembly

Applications

Server VRM Power Stage

Automotive ADAS DC/DC Converter

Use Scenario: 12 V input to 1.0 V/150 A output VRM for CPU/GPU core supply in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous FET in multiphase buck converter, switching at 600 kHz with interleaved timing.

Use Value: 2.7 mΩ R_DS(on) limits conduction loss to <1.2 W per phase; 175 °C rating sustains performance under airflow-limited rack conditions.

Use Scenario: 12 V to 5 V/20 A isolated DC/DC for radar sensor module in automotive ADAS ECU.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology, operating at 350 kHz with tight duty cycle control.

Use Value: dv/dt rating of 6 kV/µs prevents false triggering during load dump transients; JEDEC qualification ensures AEC-Q101 alignment.

Industrial PLC Power Supply

USB-C PD Fast Charger Output Stage

Use Scenario: 24 V input to 5 V/10 A auxiliary supply in programmable logic controller with wide ambient range (-40 to +85 °C).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in flyback converter, driven by transformer-coupled gate signal.

Use Value: Body diode V_SD ≤ 1.2 V reduces reverse recovery loss; 175 °C T_j max allows derating margin across full industrial temperature span.

Use Scenario: 20 V input to 9 V/3 A output in USB-C Power Delivery compliant charger using QR flyback.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier controlled by dedicated SR controller IC.

Use Value: Q_g = 43–57 nC enables precise zero-voltage switching detection; RoHS-compliant Pb-free plating meets consumer regulatory requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 60 nC; TO-220 package	Larger footprint and higher R_thJA; unsuitable for SMD-only layouts	Prefer when through-hole mounting or legacy board reuse is required
STL220N3LLH6	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 52 nC; PowerFLAT 5x6 package	No exposed drain tab; lower thermal mass limits pulse current handling	Prefer for ultra-thin designs where height <1.1 mm is mandatory

Compared with IRL3803PbF and STL220N3LLH6, IPB03N03LA uniquely combines TO263-level thermal performance (R_thJC = 1 K/W), logic-level gate drive, and industry-standard SMD footprint-making it optimal for high-current, high-reliability DC/DC modules requiring both power density and manufacturability.

Availability

IPB03N03LA is available at Aetrix Electronics and suitable for server VRM power stages, automotive ADAS DC/DC converters, and industrial PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPB03N03LA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line delivers high-performance, logic-level N-channel MOSFETs optimized for high-frequency, high-efficiency DC/DC conversion in computing, telecom, and automotive power systems.

FAQ

What is the maximum safe gate-source voltage for IPB03N03LA?

The absolute maximum V_GS is ±20 V per datasheet Rev. 1.6. Operation above ±15 V risks oxide degradation over time, while gate drive below 4.5 V may result in incomplete enhancement and elevated R_DS(on). Recommended gate drive range is 4.5 V to 12 V for reliable logic-level switching with margin.

Can IPB03N03LA be used in avalanche mode?

Yes-its single-pulse avalanche energy rating is 960 mJ at I_D = 80 A and R_GS = 25 Ω. This supports limited unclamped inductive switching events, but repetitive avalanche operation is not characterized and must be avoided in production designs without rigorous testing and derating.

Is the body diode suitable for synchronous rectification without external control?

No-the body diode is not intended for autonomous synchronous rectification. It requires active gate control via an external SR controller or microcontroller-driven timing circuit to achieve zero-voltage switching and avoid shoot-through. Its Q_rr and softness are optimized for controlled commutation, not freewheeling alone.

What PCB layout practices maximize thermal performance?

Mount the device on a vertical FR4 PCB with ≥6 cm² of 70 µm thick copper connected directly to the drain pad. Use ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) under the pad to inner ground/power planes. Keep source and gate traces short and low-inductance; avoid routing high-dI/dt paths near gate loop.

IPB03N03LA Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.7mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7027 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB03N03LA FAQ

1.How can I place an order for IPB03N03LA through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB03N03LA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB03N03LA reliable?

The price and inventory of IPB03N03LA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB03N03LA is usually 5 days.

3.What payment methods are accepted for IPB03N03LA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB03N03LA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB03N03LA?

IPB03N03LA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB03N03LA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB03N03LA?

For technical support, including IPB03N03LA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB03N03LA requirements.

6.How does Aetrix verify that IPB03N03LA is sourced from the original manufacturer or authorized distributors?

All IPB03N03LA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB03N03LA meets industry standards.

7.What is the process for return or replacement of IPB03N03LA?

All IPB03N03LA units undergo pre-shipment inspection (PSI). If there is an issue with IPB03N03LA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB03N03LA part is unused and in its original packaging.

Return procedure for IPB03N03LA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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