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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB03N03LB

Name: IPB03N03LB
Brand: Infineon Technologies
SKU: IPB03N03LB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB03N03LB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB03N03LB.pdf

Description:: MOSFET N-CH 30V 80A D2PAK

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Product details

Overview

IPB03N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 55 A, 175 °C maximum junction temperature, and optimized for high-frequency DC/DC converters in server VRMs and POL regulators.

For engineers reviewing the IPB03N03LB datasheet, IPB03N03LB pinout, IPB03N03LB application, or IPB03N03LB equivalent, key selection criteria include its low gate charge × R_DS(on) figure-of-merit (FOM), dv/dt ruggedness (6 kV/µs), 80 A continuous drain current at T_C = 100 °C, and integrated reverse diode with Q_rr = 20 nC for synchronous rectification.

Technical Context

This device employs a trench-based silicon process to achieve ultra-low R_DS(on) and high transconductance (g_fs = 139 S), enabling efficient switching in hard-switched and synchronous buck topologies. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) ensures reliable turn-on with standard 3.3 V or 5 V logic drivers.

The MOSFET features robust avalanche capability (E_AS = 580 mJ), specified dv/dt immunity up to 6 kV/µs, and thermal resistance R_thJC = 1 K/W - enabling high-power density designs when mounted on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input systems and 12 V output rails.
R_DS(on) max	2.8 mΩ @ V_GS = 10 V, I_D = 55 A - Enables <1 W conduction loss at 80 A in high-current POL stages.
I_D cont.	80 A @ T_C = 100 °C - Supports high-current CPU/GPU VRMs without forced air cooling.
Q_g total	44–59 nC - Low gate drive energy reduces driver losses and enables >1 MHz operation.
E_AS	580 mJ - Withstands single-pulse inductive energy during overcurrent events without failure.
dv/dt rating	6 kV/µs - Immune to parasitic turn-on in fast-switching, high-dV/dt converter nodes.
T_j max	175 °C - Allows operation under sustained thermal stress in compact enclosures.
Q_rr	20 nC - Minimizes reverse recovery loss and EMI in synchronous rectifier mode.

Pinout & Package

IPB03N03LB uses the PG-TO263-3 (D²PAK) surface-mount package with isolated drain tab. The case is electrically connected to the drain terminal, requiring proper PCB isolation and thermal pad design.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	Receives PWM signal; low gate capacitance (C_iss = 5.7–7.6 nF) minimizes drive loss.
2 (Drain)	High-side switch node	Connected to large copper pour for heat dissipation and low-inductance power routing.
3 (Source)	Reference return path	Serves as local ground reference for gate driver; must be routed with minimal inductance.

Key Features

Feature	Design Value
Logic-level gate drive	Turns fully on at V_GS ≥ 4.5 V - compatible with 3.3 V microcontrollers and dedicated gate drivers.
Low FOM (Q_g × R_DS(on))	~125 nC·mΩ - balances switching and conduction losses for optimal efficiency at 500 kHz–1 MHz.
Enhanced thermal performance	R_thJC = 1 K/W - enables >100 W power handling with passive heatsinking on standard PCBs.
Integrated body diode	V_SD = 0.89–1.2 V @ 80 A - supports synchronous rectification with low forward drop and controlled Q_rr.
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - validated for industrial and computing applications with extended lifetime requirements.

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converters supplying CPUs and ASICs in datacenter servers.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET in 300–600 kHz multiphase buck stages.

Use Value: 2.8 mΩ R_DS(on) and 59 nC Q_g reduce both conduction and switching losses, improving full-load efficiency by >1.2% vs. legacy 3.5 mΩ devices.

Use Scenario: Compact, high-density DC/DC modules powering FPGAs, GPUs, and memory subsystems.

IC Role / Device Role / Timing Role: Primary switching element in 1–2 MHz monolithic or discrete POL regulators.

Use Value: 175 °C T_j,max and 1 K/W R_thJC allow stable operation in thermally constrained modules without active cooling.

Industrial Motor Drives

Telecom Power Supplies

Use Scenario: Half-bridge inverters in servo drives and BLDC controllers operating up to 40 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch with fast, low-loss freewheeling via integrated diode.

Use Value: 20 nC Q_rr and 6 kV/µs dv/dt rating suppress shoot-through risk and reduce snubber losses in inductive loads.

Use Scenario: Primary-side switches in 48 V input telecom rectifiers and intermediate bus converters.

IC Role / Device Role / Timing Role: High-efficiency, high-reliability switching transistor in hot-swap and OR-ing circuits.

Use Value: JEDEC qualification and 80 A continuous rating ensure long-term stability in 24/7 telecom infrastructure deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 3.3 mΩ @ 10 V; Q_g = 60 nC; TO-220 package; no dv/dt rating specified.	Larger footprint, higher thermal resistance (R_thJC ≈ 2.5 K/W), less suitable for high-density layouts.	Prefer IPB03N03LB where board space, thermal performance, or dv/dt immunity are critical.
STL220N3LLH6	R_DS(on) = 2.5 mΩ @ 10 V; Q_g = 68 nC; DFN8 5×6 package; 150 °C T_j,max.	Lower R_DS(on) but higher Q_g; limited to 150 °C operation; requires solder-reflow compatible layout.	Choose IPB03N03LB for 175 °C environments or where gate drive strength is constrained.

Compared with IRL3803PbF and STL220N3LLH6, IPB03N03LB delivers superior thermal robustness (175 °C), lower switching loss (Q_g/R_DS(on) ratio), and verified dv/dt immunity - making it optimal for high-reliability, high-frequency computing power delivery.

Availability

IPB03N03LB is available at Aetrix Electronics and suitable for server VRMs, point-of-load converters, and industrial motor drives requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IPB03N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS®2 product line targets high-efficiency, high-frequency power conversion in computing, telecom, and industrial applications - emphasizing low R_DS(on), fast switching, and rugged reliability.

FAQ

What is the maximum recommended gate-source voltage for IPB03N03LB?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for operation between 0 V and 10 V. Driving above 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress and ESD risk. For logic-level compatibility, 4.5 V is sufficient for full enhancement.

Can IPB03N03LB be used in avalanche mode repeatedly?

No - the 580 mJ E_AS rating is for single-pulse conditions only. Repeated avalanche operation causes cumulative lattice damage and parameter drift. Designers must implement overcurrent protection (e.g., cycle-by-cycle current limiting) to avoid entering avalanche during fault conditions.

How does the PG-TO263-3 package affect thermal performance compared to TO-220?

The PG-TO263-3 offers lower R_thJC (1 K/W vs. ~2.5 K/W for TO-220) due to its exposed drain pad and planar thermal path. When soldered to a 6 cm² copper area on FR4, it achieves significantly better steady-state junction temperature rise - critical for 80 A continuous operation without heatsinks.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has low V_SD (0.89–1.2 V at 80 A) and tightly controlled Q_rr (20 nC), enabling efficient synchronous rectification. However, its reverse recovery behavior is not soft; use gate timing control to minimize cross-conduction and ensure dead-time optimization in the controller.

IPB03N03LB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 55A, 10V

Vgs(th) (Max) @ Id:: 2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7624 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB03N03LB FAQ

1.How can I place an order for IPB03N03LB through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB03N03LB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB03N03LB reliable?

The price and inventory of IPB03N03LB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB03N03LB is usually 5 days.

3.What payment methods are accepted for IPB03N03LB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB03N03LB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB03N03LB?

IPB03N03LB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB03N03LB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB03N03LB?

For technical support, including IPB03N03LB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB03N03LB requirements.

6.How does Aetrix verify that IPB03N03LB is sourced from the original manufacturer or authorized distributors?

All IPB03N03LB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB03N03LB meets industry standards.

7.What is the process for return or replacement of IPB03N03LB?

All IPB03N03LB units undergo pre-shipment inspection (PSI). If there is an issue with IPB03N03LB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB03N03LB part is unused and in its original packaging.

Return procedure for IPB03N03LB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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