Infineon Technologies IPB03N03LB G

Overview

IPB03N03LB from Infineon Technologies is an N-channel logic-level OptiMOS®2 power MOSFET in PG-TO263-3 (D²PAK) package, rated for 30 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V and I_D = 55 A, with 175 °C maximum junction temperature and dv/dt ruggedness up to 6 kV/µs - deployed in high-frequency synchronous buck converters for server VRMs.

For engineers reviewing the IPB03N03LB datasheet, IPB03N03LB pinout, IPB03N03LB application, or IPB03N03LB equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 44–59 nC total gate charge, 1 K/W junction-to-case thermal resistance, and robust 580 mJ single-pulse avalanche energy rating.

Technical Context

This MOSFET employs a trench-based silicon process optimized for high-efficiency, high-switching-frequency DC/DC conversion. Its logic-level gate threshold (1.2–2.0 V typ.) enables direct drive from 3.3 V or 5 V controllers, while the 0.9 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The device integrates a fast, low-loss body diode with 20 nC reverse recovery charge and 0.89–1.2 V forward voltage at 80 A, making it suitable for synchronous rectification where reverse recovery behavior critically impacts efficiency and EMI.

Key Specifications

Pinout & Package

IPB03N03LB is housed in PG-TO263-3 (D²PAK) package: surface-mount, isolated drain tab, 3-pin configuration with standard footprint per JEDEC TO-263AB. Thermal pad must be soldered to ≥6 cm² copper area on FR4 PCB for rated performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRL3803PbF and STL220N3LLH6, IPB03N03LB uniquely combines verified 6 kV/µs dv/dt ruggedness, 580 mJ E_AS, and 1 K/W R_thJC in a proven D²PAK package - making it preferred for high-reliability, high-frequency server and telecom power stages where transient robustness and thermal predictability are critical.

Availability

IPB03N03LB is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply across long production lifecycles.

Supply support for IPB03N03LB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IPB03N03LB belongs to the OptiMOS®2 family - engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure.

FAQ

Is IPB03N03LB suitable for synchronous rectification in a 2 MHz buck converter?

Yes - its 2.8 mΩ R_DS(on), low Crss (256–384 pF), and 44–59 nC Q_g enable efficient operation at 2 MHz. The body diode's 20 nC Q_rr and 0.89 V V_SD minimize reverse recovery loss, provided gate drive timing avoids shoot-through. Layout must minimize loop inductance.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 80 A at both T_C = 25 °C and T_C = 100 °C - this reflects bondwire current limit, not thermal limit. Actual usable current at T_C = 100 °C depends on PCB thermal design; with 6 cm² copper, derating begins above ~50 A due to junction temperature rise.

Does IPB03N03LB require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dI/dt, especially in high-di/dt applications. While the intrinsic R_G is 0.9 Ω, typical designs use 2.2–10 Ω in series with the driver to balance switching speed, EMI, and shoot-through risk - particularly in half-bridge configurations.

Can IPB03N03LB replace IPB02N03LB in an existing design?

Yes - both share identical PG-TO263-3 package, pinout, and 30 V rating. IPB03N03LB has slightly higher R_DS(on) (2.8 mΩ vs. 2.3 mΩ for IPB02N03LB) but improved dv/dt rating (6 kV/µs vs. unspecified) and same 175 °C rating. Verify thermal margin if operating near conduction loss limits.