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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB041N04NGATMA1

Name: IPB041N04NGATMA1
Brand: Infineon Technologies
SKU: IPB041N04NGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB041N04NGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB041N04NGATMA1.pdf

Description:: MOSFET N-CH 40V 80A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,605

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Product details

Overview

IPB041N04NGATMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO220-3 package, rated for 40 V V_DS, 4.1 mΩ R_DS(on) max at 10 V V_GS, and 80 A continuous drain current at T_C = 25 °C. It features 100% single-pulse avalanche testing, low gate charge (Q_g = 42–56 nC), and is optimized for high-efficiency DC/DC converters and SMPS primary-side switching.

For engineers reviewing the IPB041N04NGATMA1 datasheet, IPB041N04NGATMA1 pinout, IPB041N04NGATMA1 application, or IPB041N04NGATMA1 equivalent, key selection criteria include its 4.1 mΩ on-resistance, 40 V breakdown voltage, 80 A thermal-current capability, fast switching performance (t_r = 3.8 ns, t_f = 4.8 ns), and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 40 V technology, delivering a low figure-of-merit (gate charge × R_DS(on)) for high-frequency synchronous rectification and hard-switched topologies. Its 1.6 K/W junction-to-case thermal resistance enables high-power density designs when mounted on standard FR4 PCBs with 6 cm² copper area.

The device integrates a robust body diode with Q_rr = 46 nC and V_SD = 0.96–1.2 V at 80 A, supporting efficient freewheeling in buck, half-bridge, and LLC resonant converters. Gate threshold voltage (2–4 V) ensures stable turn-on under typical 5 V or 10 V drive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V input DC/DC stages
R_DS(on) max	4.1 mΩ at V_GS = 10 V, I_D = 80 A - Enables <1 W conduction loss at 50 A
I_D cont.	80 A at T_C = 25 °C - Supports high-current output rails in server VRMs
Q_g	42–56 nC - Low gate drive energy for <1 MHz switching without excessive driver loss
E_AS	60 mJ - Withstands single-pulse inductive energy in unclamped inductive switching
R_thJC	1.6 K/W - Allows 94 W power dissipation with ≤150 K temperature rise to case
C_iss	3400–4500 pF - Predictable Miller effect for gate driver sizing in hard-switched converters

Pinout & Package

IPB041N04NGATMA1 uses the PG-TO220-3 package: isolated tab (drain), vertical mounting, through-hole leaded configuration with 3 terminals. Thermal performance relies on mechanical mounting of the drain tab to heatsink or large copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path
Pin 2 (Gate)	Control terminal	Receives PWM signal; requires 10 V drive for full enhancement
Pin 3 (Drain)	Power input/output node	Connected to drain tab; carries full load current and heat to heatsink

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~170–230 Ω·nC - Reduces combined switching + conduction loss in 300–1000 kHz SMPS
100% avalanche tested	Single-pulse I_AS = 80 A, E_AS = 60 mJ - Guarantees ruggedness in overcurrent fault events
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 175 °C - Maintains current sharing stability in paralleled operation
RoHS & halogen-free	Compliant per IEC61249-2-21 - Meets environmental requirements for industrial and telecom equipment

Applications

Server Voltage Regulator Modules

Industrial DC/DC Converters

Use Scenario: High-current, multi-phase buck converters supplying CPU/GPU core voltage in data center servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–600 kHz with synchronous rectification.

Use Value: 4.1 mΩ R_DS(on) and 42 nC Q_g enable >95% efficiency at 50–100 A loads while minimizing thermal footprint.

Use Scenario: Isolated 24 V to 5 V/12 V DC/DC supplies in PLCs, motor drives, and factory automation controllers.

IC Role / Device Role / Timing Role: Main switch in active-clamp forward or half-bridge topology with 100–500 kHz switching.

Use Value: 40 V rating and 80 A current capacity support wide input transients and peak load surges without derating.

Telecom Power Supplies

Automotive On-Board Chargers (OBC) Auxiliary Stages

Use Scenario: 48 V intermediate bus converters powering baseband and RF subsystems in 5G macrocells.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in phase-shifted full-bridge.

Use Value: Low C_oss (980–1300 pF) and fast t_f (4.8 ns) reduce dead-time losses and improve light-load efficiency.

Use Scenario: 400 V to 12 V auxiliary power supply in EV on-board chargers, powering MCU, gate drivers, and sensors.

IC Role / Device Role / Timing Role: Low-side switch in flyback or forward converter operating up to 300 kHz.

Use Value: 175 °C max junction temperature and -55 °C min storage rating ensure reliability across automotive temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N4LF6AG	R_DS(on) = 3.2 mΩ (lower), Q_g = 62 nC (higher), TO-220FP package	Higher conduction efficiency but slower switching; better for <300 kHz fixed-frequency designs	Prefer when thermal margin is tight but switching frequency is moderate
IRF1404ZPBF	R_DS(on) = 4.7 mΩ (higher), Q_g = 131 nC (much higher), legacy Gen 2 process	Higher drive loss and lower avalanche ruggedness; not JEDEC-qualified for new designs	Only for legacy repair or cost-sensitive non-critical applications

Compared with STL110N4LF6AG and IRF1404ZPBF, IPB041N04NGATMA1 offers the best balance of low R_DS(on), moderate Q_g, and JEDEC qualification-making it optimal for new 400–1000 kHz industrial and telecom SMPS where both efficiency and reliability are critical.

Availability

IPB041N04NGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB041N04NGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 40 V product line, engineered specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial applications where low R_DS(on) and fast switching are essential.

FAQ

Is IPB041N04NGATMA1 suitable for synchronous rectification?

Yes. Its low R_DS(on) (4.1 mΩ), low Q_gd (5.3 nC), and integrated body diode with Q_rr = 46 nC make it well-suited for secondary-side synchronous rectification in LLC and forward converters. Gate plateau voltage of 5.1 V ensures clean turn-on with standard 5 V logic-level drivers.

What is the maximum recommended gate resistor for hard-switched operation?

A gate resistor of 1.6 Ω is specified in the datasheet for dynamic characterization (V_DD = 20 V, I_D = 30 A). For 80 A operation at 500 kHz, a 2.2–4.7 Ω resistor balances switching speed and gate ringing suppression, given its measured R_G = 1.6 Ω internal gate resistance.

Does IPB041N04NGATMA1 require a Kelvin source connection?

No. The PG-TO220-3 package lacks a dedicated Kelvin source pin. Its 3-pin configuration uses the same pin for source current return and gate reference. For precision gate drive in high-di/dt applications, layout must minimize source inductance via short, wide traces to the driver ground.

Can this MOSFET replace IPP041N04NG in existing designs?

Yes-IPB041N04NGATMA1 and IPP041N04NG share identical electrical specs, thermal ratings, and PG-TO220-3 packaging. The "B" suffix denotes tape-and-reel packaging; "P" is tube. Both are functionally interchangeable with no layout or drive changes required.

IPB041N04NGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 45µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB041N04NGATMA1 FAQ

1.How can I place an order for IPB041N04NGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB041N04NGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB041N04NGATMA1 reliable?

The price and inventory of IPB041N04NGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB041N04NGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB041N04NGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB041N04NGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB041N04NGATMA1?

IPB041N04NGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB041N04NGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB041N04NGATMA1?

For technical support, including IPB041N04NGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB041N04NGATMA1 requirements.

6.How does Aetrix verify that IPB041N04NGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB041N04NGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB041N04NGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB041N04NGATMA1?

All IPB041N04NGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB041N04NGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB041N04NGATMA1 part is unused and in its original packaging.

Return procedure for IPB041N04NGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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