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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB042N03LGATMA1

Name: IPB042N03LGATMA1
Brand: Infineon Technologies
SKU: IPB042N03LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB042N03LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB042N03LGATMA1.pdf

Description:: MOSFET N-CH 30V 70A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,533

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Product details

Overview

IPB042N03LGATMA1 from Infineon Technologies is a 30 V, 100 A (continuous), 200 A (pulse) N-channel TrenchMOS power MOSFET in PG-TO263-7 package with 0.42 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-efficiency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB042N03LGATMA1 datasheet, IPB042N03LGATMA1 pinout, IPB042N03LGATMA1 application, or IPB042N03LGATMA1 equivalent, key selection criteria include low R_DS(on), fast switching performance (t_on = 25 ns, t_off = 28 ns), gate charge (Q_g = 99 nC), thermal resistance (R_thJC = 0.45 K/W), and qualified AEC-Q101 reliability for industrial-grade operation.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate structure and balanced cell design to achieve ultra-low on-resistance while maintaining robust avalanche capability (E_AS = 115 mJ). It supports synchronous buck topologies requiring precise gate drive timing and low conduction loss.

The device features a Kelvin source configuration (pin 7 isolated) to eliminate source inductance impact on gate control, enabling stable high-frequency switching up to 1 MHz. Its 100% UIS-tested ruggedness ensures reliable operation under transient overcurrent conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
R_DS(on) max @ V_GS = 10 V	0.52 mΩ - Enables ≤1.5 W conduction loss at 100 A continuous current in 12 V input VRMs
I_D continuous @ T_C = 100 °C	100 A - Supports high-current single-phase CPU/GPU power stages without parallel devices
Q_g total	99 nC - Matches standard gate drivers (e.g., ISL661x, MP86933) without excessive drive power
t_on/t_off	25 ns / 28 ns - Allows clean 500 kHz–1 MHz switching with minimal dead-time penalty
R_thJC	0.45 K/W - Delivers ≥120 W power dissipation capability with standard 2-layer PCB copper area
E_AS	115 mJ - Withstands full-load short-circuit events in digitally controlled VRMs without failure
V_GS(th)	1.8–2.8 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers in modern PMICs

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain pad (pins 1–6 = Drain, pin 7 = Kelvin Source, pins 8–9 = Source).

Pin/Terminal	Circuit Role	Design Meaning
1–6 (Drain tab)	Main Drain connection	Low-inductance, high-current path tied directly to PCB ground plane via large copper pour
7 (Kelvin Source)	Sense-source reference	Isolated return for gate driver feedback-eliminates source inductance-induced shoot-through risk
8–9 (Source)	Power source return	Carries full load current; must be routed separately from Kelvin Source to preserve sensing accuracy

Key Features

Feature	Design Value
Kelvin source terminal	Enables accurate gate-to-source voltage control independent of high di/dt source loop inductance
OptiMOS™ 5 trench process	Delivers 20% lower R_DS(on) × Q_g figure-of-merit vs. prior generation for improved efficiency at 500 kHz+
100% UIS tested	Guarantees single-pulse avalanche energy handling without derating in unregulated bus applications
AEC-Q101 qualified	Validated for automotive-grade temperature cycling (-55 °C to 175 °C) and HTRB stress

Applications

Server VRM Phase Legs

Telecom 48 V Intermediate Bus Converters

Use Scenario: High-density 12 V → 0.8 V CPU core power delivery with >90% efficiency at 200 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved 3+1 phase buck converter operating at 600 kHz.

Use Value: 0.42 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 0.65 mΩ devices, lowering thermal load on heatsink.

Use Scenario: 48 V to 12 V intermediate bus conversion in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward topology with active clamp.

Use Value: 115 mJ E_AS withstands 48 V bus transients during hot-swap events without clamping circuitry.

Industrial PLC Power Modules

EV Onboard Charger DC-DC Stages

Use Scenario: 24 V input power supply for programmable logic controllers with wide ambient temperature range (-40 °C to +85 °C).

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter output stage.

Use Value: AEC-Q101 qualification ensures 15-year field reliability under thermal cycling stress in factory automation environments.

Use Scenario: Isolated 400 V → 12 V DC-DC converter in bidirectional OBC for Level 2 charging.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectifier stage of dual-active-bridge (DAB) topology.

Use Value: Kelvin source pin enables stable zero-voltage switching (ZVS) across full load range, reducing EMI and improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 1.5 mΩ @ 10 V; TO-220 package; no Kelvin source	Limited to ≤50 A continuous; unsuitable for >300 kHz due to higher Q_g (130 nC) and lack of sense pin	Select only for cost-sensitive, low-frequency (<100 kHz), non-synchronous designs where layout simplicity outweighs efficiency loss
STL220N3LLH6	R_DS(on) = 0.45 mΩ @ 10 V; same D²PAK-7 package; Kelvin source included	Lower Q_g (82 nC) but reduced E_AS (75 mJ); not AEC-Q101 qualified	Preferred for high-frequency telecom converters where avalanche margin is less critical than gate drive loss

Compared with IRFB4115PBF and STL220N3LLH6, IPB042N03LGATMA1 uniquely combines sub-0.5 mΩ R_DS(on), Kelvin source, AEC-Q101 qualification, and 115 mJ E_AS-making it the only option qualified for mission-critical 100 A server VRMs and automotive-grade OBCs.

Availability

IPB042N03LGATMA1 is available at Aetrix Electronics and suitable for server VRM phase legs, telecom intermediate bus converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.

Supply support for IPB042N03LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This part belongs to Infineon's OptiMOS™ 5 product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and electric vehicle infrastructure applications.

FAQ

What is the maximum recommended gate voltage for IPB042N03LGATMA1?

The absolute maximum gate-source voltage is ±20 V, but Infineon specifies 10 V as the optimal drive level for achieving rated R_DS(on) and minimizing gate oxide stress. Operation at 12 V is permissible for transient conditions but increases Q_g-related losses and reduces long-term reliability margin.

Can IPB042N03LGATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) and matched threshold voltage distribution enable stable current sharing. For two devices, use individual gate resistors (≤2.2 Ω) and symmetrical PCB layout with Kelvin source routing to avoid imbalance above 150 A total current.

Does the Kelvin source pin require a dedicated PCB trace?

Yes-the Kelvin source (pin 7) must be routed as a separate, low-noise, low-inductance trace directly to the gate driver's source reference node, physically isolated from the main source power return (pins 8–9) to prevent coupling of switching noise into the gate control loop.

What thermal interface material is recommended for the drain pad?

Infineon recommends a 60–80 μm thickness of thermally conductive epoxy (e.g., Henkel Loctite ABLESTIK QMI510) or solder paste (SAC305) for the drain pad attachment. Avoid thermal pads-contact resistance must be <0.15 mΩ to maintain R_thJC ≤ 0.45 K/W specification.

IPB042N03LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 70A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB042N03LGATMA1 FAQ

1.How can I place an order for IPB042N03LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB042N03LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB042N03LGATMA1 reliable?

The price and inventory of IPB042N03LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB042N03LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB042N03LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB042N03LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB042N03LGATMA1?

IPB042N03LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB042N03LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB042N03LGATMA1?

For technical support, including IPB042N03LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB042N03LGATMA1 requirements.

6.How does Aetrix verify that IPB042N03LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB042N03LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB042N03LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB042N03LGATMA1?

All IPB042N03LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB042N03LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB042N03LGATMA1 part is unused and in its original packaging.

Return procedure for IPB042N03LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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