Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB048N06LGATMA1

Name: IPB048N06LGATMA1
Brand: Infineon Technologies
SKU: IPB048N06LGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB048N06LGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB048N06LGATMA1.pdf

Description:: MOSFET N-CH 60V 100A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,370

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB048N06LGATMA1 from Infineon Technologies is a 60 V, logic-level N-channel enhancement-mode MOSFET in PG-TO263-3 (D²PAK) package, rated for 100 A continuous drain current at T_C = 100 °C, with R_DS(on) = 4.4 mΩ at V_GS = 4.5 V and I_D = 66 A, avalanche-rated, and qualified for 175 °C operation - used in high-efficiency synchronous rectification and DC-DC converters.

For engineers reviewing the IPB048N06LGATMA1 datasheet, IPB048N06LGATMA1 pinout, IPB048N06LGATMA1 application, or IPB048N06LGATMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V, robust avalanche energy (E_AS = 810 mJ), and thermal resistance (R_thJC = 0.5 K/W) for high-power switching designs.

Technical Context

This OptiMOS® power transistor employs trench-gate technology optimized for fast switching and low conduction loss in high-frequency DC-DC topologies. Its gate charge profile (Q_g = 169–225 nC, Q_gd = 54–81 nC) supports efficient hard-switching up to several hundred kHz, while its reverse diode exhibits t_rr = 65–80 ns and Q_rr = 125–160 nC for reduced commutation loss.

The device features a fully avalanche-rated structure (I_AS = 100 A, E_AS = 810 mJ), operates reliably across –55 °C to +175 °C junction temperature, and maintains stable R_DS(on) over temperature (4.4 mΩ @ 25 °C → ~7.2 mΩ @ 175 °C), enabling thermally constrained industrial and automotive power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V bus systems and 60 V safety margin designs
R_DS(on) max @ 4.5 V	5.7 mΩ - enables efficient operation with 3.3 V/5 V logic-level gate drivers without level-shifting
I_D cont. @ T_C=100 °C	100 A - supports high-current output stages in server VRMs and telecom PSUs
E_AS	810 mJ - withstands single-pulse inductive energy without failure in flyback or LLC resonant circuits
R_thJC	0.5 K/W - allows direct heatsink mounting for high-power density thermal management
Q_gd	54–81 nC - low gate-drain charge minimizes Miller-induced switching delay and improves dV/dt immunity
t_rr	65–80 ns - fast body diode recovery reduces shoot-through risk and dead-time requirements

Pinout & Package

IPB048N06LGATMA1 uses the PG-TO263-3 (D²PAK) surface-mount package with isolated tab, optimized for PCB thermal conduction via large copper drain pad. The package supports high-current routing and vertical airflow cooling on FR4 boards with ≥6 cm² copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Gate)	Control input (G)	Logic-level driven node; requires <2.0 V threshold activation; sensitive to noise due to low V_GS(th)
Pin 3 (Drain)	Power output (D)	High-current drain connection; electrically tied to exposed metal tab; must be routed with wide copper pour

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver boost stages in 5 V or 3.3 V control systems
Avalanche ruggedness	Rated for repetitive single-pulse avalanche (E_AS = 810 mJ) - enables reliable operation in inductive switching without external snubbers
High-temperature capability	175 °C maximum junction temperature - supports operation in sealed enclosures or under hood automotive environments
Low Q_gd/Q_g ratio	Q_gd/Q_g ≈ 32 % - improves switching controllability and reduces sensitivity to Miller feedback during turn-off
Optimized body diode	t_rr = 65–80 ns, Q_rr = 125–160 nC - lowers reverse recovery loss in synchronous rectifier and half-bridge freewheeling paths

Applications

Server Voltage Regulator Modules (VRMs)

Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converters delivering 50–200 A at 0.8–1.8 V to CPUs/GPUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in interleaved phases, switching at 300–600 kHz.

Use Value: 4.4 mΩ R_DS(on) at 4.5 V reduces conduction loss by >15 % vs. standard 10 V gate MOSFETs, improving efficiency at light-to-full load.

Use Scenario: 48 V input to 12 V/5 V isolated or non-isolated converters in base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in forward or active clamp topologies.

Use Value: Avalanche rating and 175 °C operation ensure reliability under transient overloads and high ambient temperatures in outdoor cabinets.

Automotive On-Board Chargers (OBC)

Industrial Motor Drive Inverters

Use Scenario: Bidirectional AC/DC and DC/DC stages in 6.6 kW OBC modules with SiC/GaN front-end and MOSFET-based isolation.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in DAB or LLC resonant converter output stage.

Use Value: Fast t_rr and low Q_rr minimize body diode losses during zero-voltage switching transitions, increasing overall system efficiency by ~0.8 %.

Use Scenario: 24–48 V DC bus inverters driving BLDC or stepper motors in factory automation and robotics.

IC Role / Device Role / Timing Role: Half-bridge low-side switch in 20–100 kHz PWM motor control stages.

Use Value: 0.5 K/W R_thJC enables direct heatsink mounting on compact motor controller PCBs, reducing thermal interface layers and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 3.3 mΩ @ 4.5 V, but 65 V V_DS, higher Q_g (260 nC), no official avalanche rating	Better conduction loss at same V_GS, but less robust under unclamped inductive switching	Prefer when gate drive strength is ample and avalanche stress is absent
IRF7470PBF	R_DS(on) = 5.2 mΩ @ 4.5 V, 60 V V_DS, lower E_AS (420 mJ), TO-252 package (higher R_thJC = 2.5 K/W)	Lower thermal performance and avalanche margin; suitable only for lower-power (<30 A) applications	Choose only for cost-sensitive, space-constrained, low-current designs where thermal headroom exists

Compared with STL220N6F7 and IRF7470PBF, IPB048N06LGATMA1 delivers superior balance of logic-level drivability, avalanche ruggedness, and thermal performance - making it optimal for high-reliability, high-current synchronous rectification where both efficiency and fault tolerance are critical.

Availability

IPB048N06LGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPB048N06LGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This device belongs to Infineon's OptiMOS™ 6 family of logic-level power MOSFETs, engineered specifically for high-efficiency, high-frequency switching in server, telecom, and EV infrastructure power conversion systems.

FAQ

What is the maximum safe operating junction temperature for IPB048N06LGATMA1?

The absolute maximum junction temperature is 175 °C, and the device is fully characterized across this range. Derating curves for I_D and P_tot versus case temperature are provided in the datasheet (Rev. 1.13, pages 4–5), confirming continuous operation up to 175 °C with appropriate thermal design.

Does IPB048N06LGATMA1 require a gate resistor for stability in hard-switching applications?

Yes - a gate resistor (typically 1.3–5 Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies R_G = 1.3 Ω for dynamic parameter characterization (e.g., t_r, t_f, Q_g) and shows gate plateau voltage at 3.5 V, indicating strong Miller effect mitigation is needed.

Can IPB048N06LGATMA1 be used as a replacement for IPP048N06LG in through-hole designs?

No - IPB048N06LGATMA1 uses PG-TO263-3 (D²PAK), while IPP048N06LG uses PG-TO220-3. Though electrically identical, the packages differ mechanically and thermally: D²PAK offers lower R_thJC (0.5 K/W) but requires SMT assembly and PCB copper area, whereas TO-220 supports bolt-on heatsinks and through-hole mounting.

Is the body diode of IPB048N06LGATMA1 suitable for reverse conduction in bidirectional topologies?

Yes - the integrated body diode is characterized for continuous forward current (I_S = 100 A) and pulsed current (I_S,pulse = 400 A), with t_rr = 65–80 ns and Q_rr = 125–160 nC. These values support use in bidirectional DAB or dual-active-bridge converters where controlled reverse conduction occurs during soft-switching intervals.

IPB048N06LGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 2V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB048N06LGATMA1 FAQ

1.How can I place an order for IPB048N06LGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB048N06LGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB048N06LGATMA1 reliable?

The price and inventory of IPB048N06LGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB048N06LGATMA1 is usually 5 days.

3.What payment methods are accepted for IPB048N06LGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB048N06LGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB048N06LGATMA1?

IPB048N06LGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB048N06LGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB048N06LGATMA1?

For technical support, including IPB048N06LGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB048N06LGATMA1 requirements.

6.How does Aetrix verify that IPB048N06LGATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB048N06LGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB048N06LGATMA1 meets industry standards.

7.What is the process for return or replacement of IPB048N06LGATMA1?

All IPB048N06LGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB048N06LGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB048N06LGATMA1 part is unused and in its original packaging.

Return procedure for IPB048N06LGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…