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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB049N06L3GATMA1

Name: IPB049N06L3GATMA1
Brand: Infineon Technologies
SKU: IPB049N06L3GATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB049N06L3GATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB049N06L3GATMA1.pdf

Description:: MOSFET N-CH 60V 80A D2PAK

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Inventory:6,049

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Product details

Overview

IPB049N06L3GATMA1 from Infineon Technologies is a 60 V, 100 A (continuous), 4.9 mΩ N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-efficiency DC-DC converters and motor drive half-bridges with low gate charge (Q_g = 47 nC) and fast switching (t_on = 11 ns, t_off = 28 ns).

For engineers reviewing the IPB049N06L3GATMA1 datasheet, IPB049N06L3GATMA1 pinout, IPB049N06L3GATMA1 application, or IPB049N06L3GATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (E_AS = 500 mJ), thermal resistance (R_thJC = 0.65 K/W), and SOA compliance for pulsed load conditions.

Technical Context

This device uses Infineon's OptiMOS™ 3 technology, featuring trench-gate process and optimized cell layout to reduce conduction and switching losses simultaneously. It supports synchronous rectification in buck converters and high-side/low-side switching in 48 V automotive and industrial motor control systems.

Its gate threshold voltage (V_GS(th) = 2.0–3.0 V) ensures compatibility with 3.3 V and 5 V logic-level drivers, while its integrated body diode exhibits low forward voltage (V_SD = 1.3 V @ I_F = 50 A) and fast recovery (t_rr = 60 ns), enabling efficient freewheeling without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum drain-source blocking voltage for 48 V nominal bus applications with 20 % margin
R_DS(on) max @ V_GS = 10 V	4.9 mΩ - Enables ≤1.5 W conduction loss at 100 A continuous current in thermally managed designs
I_D continuous @ T_C = 25 °C	100 A - Rated current limited by bondwire capacity; derates to 62 A at T_C = 100 °C
Q_g total	47 nC - Reduces gate driver power demand and enables >500 kHz PWM operation with low EMI
E_AS	500 mJ - Supports unclamped inductive switching in motor phase-legs without external snubbers
R_thJC	0.65 K/W - Allows 120 W power dissipation with 78 K temperature rise from junction to case under forced-air cooling
t_rr of body diode	60 ns - Minimizes reverse recovery loss and shoot-through risk in synchronous rectifier topologies

Pinout & Package

IPB049N06L3GATMA1 is housed in a through-hole PG-TO220-3 package with isolated tab (drain-connected), standard footprint, and vertical mounting orientation. The package features thick copper die attach and 1-layer epoxy molding compound for enhanced thermal cycling reliability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to PCB ground plane or low-side shunt resistor
Pin 2 (Gate)	Control input (G)	High-impedance MOSFET gate requiring <1 µA bias; driven via gate resistor to limit dV/dt
Pin 3 (Drain)	Power output (D)	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
OptiMOS™ 3 trench technology	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs. prior generation, lowering total switching + conduction loss
100 % avalanche tested	Each unit validated for single-pulse E_AS ≥ 500 mJ, ensuring robustness against inductive kickback in motor drives
Logic-level gate drive	V_GS(th) range (2.0–3.0 V) guarantees full enhancement with 3.3 V microcontroller GPIO or dedicated gate drivers
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level MSL 1 (unlimited floor life), simplifying SMT reflow and storage logistics

Applications

Automotive HVAC Blower Control

Industrial 48 V DC-DC Converter

Use Scenario: PWM-controlled 48 V blower motor in passenger cabin climate systems with peak loads up to 8 kW.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration, switching at 20–40 kHz with dead-time control.

Use Value: 4.9 mΩ R_DS(on) limits conduction loss to <4 W at 100 A, reducing heatsink size by 40 % vs. 6.5 mΩ alternatives.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diodes, operating in phase with primary-side timing.

Use Value: Body diode t_rr = 60 ns and low Q_rr enable zero-voltage switching alignment, improving efficiency by 1.8 % at full load.

Solar Microinverter Half-Bridge

Server PSU OR-ing FET

Use Scenario: High-frequency (100 kHz) half-bridge in string-level microinverters converting 30–60 V PV input to 230 V AC.

IC Role / Device Role / Timing Role: High-side and low-side power switch with active gate control and overcurrent protection feedback.

Use Value: 47 nC Q_g allows fast turn-on/turn-off with minimal driver IC power consumption (<150 mW per gate), extending lifetime.

Use Scenario: Hot-swap OR-ing FET in redundant 48 V server backplanes, managing load sharing between parallel PSUs.

IC Role / Device Role / Timing Role: Load-switching MOSFET with bidirectional current sensing and fast fault response (<1 µs).

Use Value: Avalanche-rated construction withstands 100 V transients during hot-plug events, eliminating need for external TVS clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP052N06L3 G	R_DS(on) = 5.2 mΩ (higher), Q_g = 49 nC (slightly higher), same package and V_DS	Marginally lower efficiency in high-current continuous operation; identical pinout and thermal profile	Select when cost sensitivity outweighs 0.3 mΩ R_DS(on) penalty and thermal headroom is ample
IPB036N06L3 G	R_DS(on) = 3.6 mΩ (lower), Q_g = 55 nC (higher), same package and V_DS	Better conduction loss but increased gate drive loss and EMI risk above 300 kHz due to higher Q_g	Select for <200 kHz applications where conduction loss dominates, e.g., high-current linear regulators or battery disconnect

Compared with IPP052N06L3 G and IPB036N06L3 G, IPB049N06L3GATMA1 delivers optimal balance of conduction loss, switching speed, and gate drive simplicity-ideal for 200–500 kHz DC-DC and motor control designs where thermal and EMI constraints coexist.

Availability

IPB049N06L3GATMA1 is available at Aetrix Electronics and suitable for automotive HVAC systems, industrial 48 V DC-DC converters, solar microinverters, and server OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for IPB049N06L3GATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the OptiMOS™ 3 discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in 12–60 V systems including automotive, renewable energy, and data center infrastructure.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_j) is 175 °C. For reliable long-term operation, Infineon recommends limiting steady-state T_j to ≤150 °C using thermal design that accounts for R_thJC = 0.65 K/W and PCB copper area. Derating curves in Figure 2 of the datasheet define safe I_D limits versus case temperature.

Is the drain tab electrically isolated in the PG-TO220-3 package?

Yes-the metal tab is internally connected to the drain (Pin 3) but electrically isolated from the source and gate pins. When mounted to a heatsink, a non-conductive thermal pad or mica insulator must be used unless the heatsink is referenced to the drain potential. Isolation voltage rating is 2.5 kV RMS per UL 60950-1.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For typical 12 V gate drive and 500 kHz switching, a 10 Ω series resistor is recommended. Lower values (5–8 Ω) improve switching speed but increase EMI; higher values (15–22 Ω) reduce ringing at the expense of increased switching loss. Layout parasitics must also be minimized.

Can IPB049N06L3GATMA1 replace IPP052N06L3 G in existing designs without layout changes?

Yes-both share identical PG-TO220-3 package, pinout, and thermal footprint. The 0.3 mΩ lower R_DS(on) and 2 nC lower Q_g of IPB049N06L3GATMA1 yield measurable efficiency gain without requiring PCB or driver circuit modifications, provided gate drive strength remains sufficient for the slightly lower V_GS(th) threshold.

IPB049N06L3GATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 58µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8400 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB049N06L3GATMA1 FAQ

1.How can I place an order for IPB049N06L3GATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB049N06L3GATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB049N06L3GATMA1 reliable?

The price and inventory of IPB049N06L3GATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB049N06L3GATMA1 is usually 5 days.

3.What payment methods are accepted for IPB049N06L3GATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB049N06L3GATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB049N06L3GATMA1?

IPB049N06L3GATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB049N06L3GATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB049N06L3GATMA1?

For technical support, including IPB049N06L3GATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB049N06L3GATMA1 requirements.

6.How does Aetrix verify that IPB049N06L3GATMA1 is sourced from the original manufacturer or authorized distributors?

All IPB049N06L3GATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB049N06L3GATMA1 meets industry standards.

7.What is the process for return or replacement of IPB049N06L3GATMA1?

All IPB049N06L3GATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPB049N06L3GATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB049N06L3GATMA1 part is unused and in its original packaging.

Return procedure for IPB049N06L3GATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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